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    Abstract: No abstract text available
    Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while


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    Abstract: IRGMC30U
    Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


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