IRGCH50FE
Abstract: IRGPH50F
Text: Previous Datasheet Index Next Data Sheet PD-9.1421 TARGET IRGCH50FE IRGCH50FE IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCH50FE
IRGCH50FE
IRGPH50F
IRGPH50F
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igbt 20A 1200v
Abstract: IRGCH50FE IRGPH50F
Text: PD-9.1421 TARGET IRGCH50FE IRGCH50FE IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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PDF
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IRGCH50FE
IRGCH50FE
IRGPH50F
igbt 20A 1200v
IRGPH50F
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Untitled
Abstract: No abstract text available
Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter
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IRGCH50FE
IRGCH50FE
250pA,
250pA
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