IRGCC50KE
Abstract: IRGPC50K
Text: PD-9.1424 TARGET IRGCC50KE IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC50KE
IRGCC50KE
IRGPC50K
IRGPC50K
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IRGCC50KE
Abstract: IRGPC50K
Text: Previous Datasheet Index Next Data Sheet PD-9.1424 TARGET IRGCC50KE IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCC50KE
IRGCC50KE
IRGPC50K
IRGPC50K
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Untitled
Abstract: No abstract text available
Text: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.
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OCR Scan
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P-944
IRGCC50KE
IRGCC50KE
250pA,
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