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    IRGBC40U IGBT Search Results

    IRGBC40U IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IRGBC40U IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGBC40U

    Abstract: D-12
    Text: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC40U O-220AB C-668 IRGBC40U D-12

    C667 transistor

    Abstract: transistor C663 IRGBC40U D-12 C665 C-666
    Text: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC40U O-220AB 100in C-668 C667 transistor transistor C663 IRGBC40U D-12 C665 C-666

    C668 transistor

    Abstract: C667 transistor D-12 IRGBC40U
    Text: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC40U O-220AB C-668 C668 transistor C667 transistor D-12 IRGBC40U

    C667 transistor

    Abstract: D-12 IRGBC40U DSA00104749.txt
    Text: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC40U O-220AB C-668 C667 transistor D-12 IRGBC40U DSA00104749.txt

    IGBT

    Abstract: igbt subcircuit AN1043 Spice Model for TMOS Power MOSFETs igbt spice igbt spice model Spice Model for TMOS Power MOSFETs igbt testing KP21 3 phase IGBT inverter 90-73
    Text: A SPICE MODEL FOR IGBTs A. F. Petrie, Independent Consultant, 7 W. Lillian Ave., Arlington Heights, IL 60004 Charles Hymowitz, Intusoft, 222 West 6th St. Suite 1070, San Pedro, CA 90731, 310 833-0710, FAX (310) 833-9658, E-mail 74774.2023@compuserve.com


    Original     		PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


    Original     		PDF IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983

    INT-944

    Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
    Text: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		PDF AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		PDF AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    "AN-978" IR2110

    Abstract: IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A
    Text: APPLICATION NOTES Savings tips that add value to your designs. INTERNATIONAL RECTIFIER¥APPLICATION ENG¥233 KANSAS ST.¥EL AN-990AJ IGBTの応用特性 HEXFREDはInternational Rectifier社の商標 By Steve Clemente


    Original     		PDF AN-990AJ AN-983AIGBT AN-983A IRGBC40F IR2110 83E-02 17E-04 13E-04 9E-03 "AN-978" IR2110 IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.683A International Ek>ri Rectifier IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC40U O-220AB 60Emitter TQ-220AB S5452

    C667 transistor

    Abstract: IRGBC40U TRANSISTOR BIPOLAR 400V 20A C-666
    Text: kitemational g«»]Rectifier PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC40U O-220AB O-22QAB C667 transistor IRGBC40U TRANSISTOR BIPOLAR 400V 20A C-666

    D-12

    Abstract: IRGBC40U G607 1RGBC40U
    Text: PD - 9.683A International «»Rectifier IRGBC40U UltraFasi IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC40U TQ-220AB D-12 IRGBC40U G607 1RGBC40U

    IRGDDN600M06

    Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
    Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current


    OCR Scan     		PDF IRGBF20F IRGPF20F IRGB420U IRGP420U IRGBC20K RGPC20K IRGBC20M IRGPC20M IRGBC20U IRGPC20U IRGDDN600M06 IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U

    Untitled

    Abstract: No abstract text available
    Text: •I 4055452 0Glbl47 322 ■ INR Discrete IGBTs other Products From IR UltraFast IGBTs Applications: SM PS’s, Motor Controls, Robotics, PF Correction V BR CES Collecter lo Emitter Breakdown Part Number Vg EIUi ) Gate to Emitter Threshold Voltage Voltage


    OCR Scan     		PDF 0Glbl47 IRGB410U IRGB420U IRGB430U IRGB44QU IRGBC20U IRGBC30U IRGBC40U IRGP420U IRGP430U

    CPV362MU

    Abstract: No abstract text available
    Text: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter


    OCR Scan     		PDF IRGB420U IRGB430U IRGB440U IRGP420U IRGP430U IRGP440U IRGP450U T0-220AB 247AC IRGB420UD2 CPV362MU

    IRGB430UD2

    Abstract: IRGTI140U06 CPV362MU IRGPC50U
    Text: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)


    OCR Scan     		PDF 30kHz) O-220AB O-247AC IRGB420UD2 IRGB430UD2 IRGP430UD2 IRGP440UD2 IRGP450UD2 IRGTI140U06 CPV362MU IRGPC50U

    ups art 600

    Abstract: IRGTA050F06 IRGTA065U06 IRGPF30F 298 transistor chopper er
    Text: Insulated Gate Bipolar Transistor International S R e ctrfie r Standard-Speed IGBTs Applications: High Voltage Motor Controls, UPS Part Num ber b v CES C ollector to E m itter B reakdow n Voltage V IRGBC20S IRGBC30S IRGBC40S 600 VGE(ttl) Gate to E m itter


    OCR Scan     		PDF IRGBC20S IRGBC30S IRGBC40S IRGPC40S IRGPC50S T0-220AB IRGTI090U06 IRGTI115U06 1RGTI140U06 IRGKI050U06 ups art 600 IRGTA050F06 IRGTA065U06 IRGPF30F 298 transistor chopper er

    IRGPH50U

    Abstract: IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGTI090U06 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m
    Text: Co-Packs - IGBT's Other Products Fro m IR Fast Speed Co-Packs Applications: Motor Controls, U P S ’s Industrial V B R C E S C o lle c to r to P a rt N u m b e r E m itte r B re a k d o w n V C E (o n ) 'c C o lle c to r to C o n tin u o u s C o llec tor


    OCR Scan     		PDF IRGBC20FD2 IRGBC30FD2 IRGBC30FD1 T0-220 IRGPC40FD2 IRGPC40FD1 IRGPC50FD2 IRGTI050U06 IRGTI090U06 IRGTI115U06 IRGPH50U IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m