IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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IRGB420U
IRGP420U
IRGB430U
IRGP430U
IRGBC20K
IRGPC20K
IRGBC20K-S
IRGBC20M
IRGBC20M-S
IRGPC20M
IRGKI200F06
IRGNIN150M06
IRGKI120F06
IRGDDN600M06
IRGKI115U06
IRGBC20FD2
IRGTIN025M12
IRGTI140U06
IRGPC50U
IRGKI165F06
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AN-994
Abstract: IRGBC20KD2-S IRGBC20MD2-S
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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Untitled
Abstract: No abstract text available
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
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gFE smd diode
Abstract: AN-994 IRGBC20KD2-S SMD-220
Text: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC20KD2-S
SMD-220
gFE smd diode
AN-994
IRGBC20KD2-S
SMD-220
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AN-994
Abstract: IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
10 DC IR Bridge
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3 phase dc control ir2130
Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
Text: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス
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93-6AJ
IR2130
O-220
IRGBC30UD2-S)
IR2130S
IR2130J
Diagram-IR2130S)
Diagram-IR2130J)
3 phase dc control ir2130
igbt driver ir2130 circuit
smd 3 phase rectifier bridge
MP816
Design Tips for IR2130
IRGBC30KD
AN-985
IR2130 APPLICATIONS
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motor IG 2200 19 X 000 15 R
Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
motor IG 2200 19 X 000 15 R
motor IG 2200 53 X 000 41 R
ic c 838
IRG4BC20KD
IRG4BC20KD-S
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
motor IG 2200 19 00001
227V
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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Untitled
Abstract: No abstract text available
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -9.1598 PRELIMINARY IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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g10 smd transistor
Abstract: IRGBC20KD2-S AN-994 SMD-220 GC smd diode
Text: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC20KD2-S
SMD-220
g10 smd transistor
IRGBC20KD2-S
AN-994
SMD-220
GC smd diode
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c918
Abstract: C918 diode C913
Text: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses
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OCR Scan
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IRGBC20KD2-S
i002070
SMD-220
C-920
c918
C918 diode
C913
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transistor c915
Abstract: C918 diode transistor c913 transistor c914 C919 diode c918 c916 transistor C913 smd diode 917 b 140 c914
Text: Iitemational [ÏÔR]Rectifier PD - 9.1125A IRGBC20KD2-S Short Circüit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated - 1 0 m s @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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OCR Scan
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IRGBC20KD2-S
C-919
SMD-220
C-920
transistor c915
C918 diode
transistor c913
transistor c914
C919 diode
c918
c916 transistor
C913
smd diode 917 b 140
c914
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IRGPH40KD2
Abstract: IRGPH20K irgph30k
Text: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage
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IRGBC20K
IRGBC30K
IRGBC40K
IRGPC20K
IRGPC30K
IRGPC40K
IRGPC50K
O-220AB
IRGBC20KD
IRGNIN050K06
IRGPH40KD2
IRGPH20K
irgph30k
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Untitled
Abstract: No abstract text available
Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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OCR Scan
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IRG4BC20KD-S
5SM52
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IRGPH40KD2
Abstract: IRGPC30KD2
Text: I n t e r n a t io n a l R e c t if ie r IGBTs I Insulated Gate Bipolar Transistors VCES Colador to EmitlarVoltaga Volt. Pm ULTRA-FAST M»x VcEfon) Colador to EmitterVohag* (Vota) ICContinuom Colador Current Tc*25*C Tc=KKCC (Ampt) (Ampi) Pq Mu Dissipation
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IRGBC20K
IRGBC30K
IRGBC40K
IRGBC20K-S
IRGBC40K-S
IRGPC30K
IRGPC40K
IRGPC50K
IRGPC60K
30kHz)
IRGPH40KD2
IRGPC30KD2
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IRGDDN600M06
Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current
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OCR Scan
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IRGBF20F
IRGPF20F
IRGB420U
IRGP420U
IRGBC20K
RGPC20K
IRGBC20M
IRGPC20M
IRGBC20U
IRGPC20U
IRGDDN600M06
IRGPH20K
IRGPC20F
IRGPF30F
irgpc50md2
*gBC20f
IRGPC50U
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Drive circuit for IGBT using IR2130
Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Text: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm
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T0-220
IRGBC30KD2-S)
Drive circuit for IGBT using IR2130
Schematic Drive circuit for IGBT using IR2130
SMD LD3
smd diode h15
AN-985
two IR2130 12 output
single phase IR2130
MP816
ac motor speed control circuit ir2130
h1n1
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IRG4BC20KD-S
Abstract: No abstract text available
Text: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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IRG4BC20KD-S
IRG4BC20KD-S
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