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    Infineon Technologies AG IRG7PH44K10DPBF

    IGBT 1200V 70A 320W TO247AC
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    International Rectifier IRG7PH44K10DPBF

    IRG7PH44K10 - Discrete IGBT with Anti-Parallel Diode '
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    Rochester Electronics IRG7PH44K10DPBF 3 1
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    IRG7PH44K10DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH44K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 70A 320W TO247AC Original PDF

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    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


    Original     		PDF IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD