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    Infineon Technologies AG IRG7CH37K10EF

    Trans IGBT Chip N-CH 1200V 15A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH37K10EF)
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    Avnet Americas IRG7CH37K10EF Waffle Pack 2,290
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    IRG7CH37K10EF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG7CH37K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF

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    Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		PDF IRG7CH37K10EF