transistor A55
Abstract: mount transistor A55 IRG4PH40
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
transistor A55
mount transistor A55
IRG4PH40
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IRG4PH40S
Abstract: No abstract text available
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
IRG4PH40S
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IRG4PH40S
Abstract: No abstract text available
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
IRG4PH40S
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300C
Abstract: IRG4CH40SB IRG4PH40S
Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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PD-91799A
IRG4CH40SB
IRG4CH40SB
IRG4PH40S
300C
IRG4PH40S
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ir igbt 1200V 10A
Abstract: 1kA IGBT 300C IRG4CH40SB IRG4PH40S
Text: PD - 91799 IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4CH40SB
IRG4CH40SB
IRG4PH40S
ir igbt 1200V 10A
1kA IGBT
300C
IRG4PH40S
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2 SK 0243
Abstract: 300C IRG4CH40SB IRG4PH40S
Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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PD-91799A
IRG4CH40SB
IRG4CH40SB
IRG4PH40S
2 SK 0243
300C
IRG4PH40S
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2 SK 0243
Abstract: No abstract text available
Text: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.
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PDF
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IRG4CH40SB
PD-91799A
IRG4CH40SB
IRG4PH40S
2 SK 0243
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