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Infineon Technologies AG IRG4BC30U IGBT 600V 23A 100W TO220AB
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DigiKey	IRG4BC30U	Tube			250	1 - 10 - 100 - 1000 $1.54712 10000 $1.54712	Buy Now
Infineon Technologies AG IRG4BC30U-S IGBT 600V 23A 100W D2PAK
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DigiKey	IRG4BC30U-S	Tube			250	1 - 10 - 100 - 1000 $1.72444 10000 $1.72444	Buy Now
Rochester Electronics LLC IRG4BC30UPBF ULTRAFAST SPEED IGBT
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DigiKey	IRG4BC30UPBF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IRG4BC30UPBF	Bulk			217	1 - 10 - 100 - 1000 $1.38 10000 $1.38	Buy Now
Infineon Technologies AG IRG4BC30UPBF IGBT 600V 23A 100W TO220AB
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DigiKey	IRG4BC30UPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IRG4BC30UPBF	Bulk	2,348	5 Weeks	1	1 $0.87 10 $0.87 100 $0.87 1000 $0.87 10000 $0.87	Buy Now
Rochester Electronics	IRG4BC30UPBF		12,220		1	1 $1.33 10 $1.33 100 $1.25 1000 $1.13 10000 $1.13	Buy Now
Infineon Technologies AG AUIRG4BC30U-S IGBT 600V 23A 100W D2PAK
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DigiKey	AUIRG4BC30U-S	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRG4BC30U Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
IRG4BC30U	International Rectifier	Insulated Gate Bipolar Transistor Ultrafast Speed IGBT	Original	PDF
IRG4BC30U	International Rectifier	600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30U with Standard Packaging	Original	PDF
IRG4BC30U	International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF
IRG4BC30U	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 23A, TO-220 Pkg	Scan	PDF
IRG4BC30UD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT	Original	PDF
IRG4BC30UD	International Rectifier	600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; A IRG4BC30UD with Standard Packaging	Original	PDF
IRG4BC30UD	International Rectifier	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode	Original	PDF
IRG4BC30UD	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 23A, TO-220 CoPack	Scan	PDF
IRG4BC30UDPbF	International Rectifier	TRANS IGBT CHIP N-CH 600V 23A 3TO-220AB	Original	PDF
IRG4BC30UDPBF	International Rectifier	600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; A IRG4BC30UDPBF with Standard Packaging	Original	PDF
IRG4BC30UPbF	International Rectifier	TRANS IGBT CHIP N-CH 600V 23A 3TO-220AB	Original	PDF
IRG4BC30UPBF	International Rectifier	600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC30U with Lead Free Packaging	Original	PDF
IRG4BC30US	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V,	Original	PDF
IRG4BC30U-S	International Rectifier	600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package; A IRG4BC30U-S with Standard Packaging	Original	PDF

IRG4BC30U-S	International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF
IRG4BC30U-SPBF	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4BC30U-STRL	International Rectifier	TRANS IGBT CHIP N-CH 600V 23A 3D2-PAK T/R	Original	PDF
IRG4BC30U-STRR	International Rectifier	TRANS IGBT CHIP N-CH 600V 23A 3D2-PAK T/R	Original	PDF
IRG4BC30U-STRRP	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 23A 100W D2PAK	Original	PDF

IRG4BC30U Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRG4BC30UD Abstract: No abstract text available Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD	PDF
IRG4BC30U Abstract: No abstract text available Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91452E IRG4BC30U O-220AB O-220AB IRG4BC30U	PDF
transistor A6t 75 Abstract: A6T TRANSISTOR Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	5692A IRG4BC30U-SPbF VC957) EIA-418. transistor A6t 75 A6T TRANSISTOR	PDF
IRF1010 Abstract: No abstract text available Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IRF1010	PDF
IGBT 600V 12A Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010 Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IGBT 600V 12A TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010	PDF
Untitled Abstract: No abstract text available Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC30UPbF O-220AB O-220AB -220AB	PDF
1453a Abstract: IRG4BC30UD ITT 451 DIODE Text: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	IRG4BC30UD O-220AB 1453a IRG4BC30UD ITT 451 DIODE	PDF
IRG4BC30U Abstract: No abstract text available Text: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	1452C IRG4BC30U O-220AB O-220Alim IRG4BC30U	PDF
Untitled Abstract: No abstract text available Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD	Original	HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3	PDF
Untitled Abstract: No abstract text available Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91453B IRG4BC30UD O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91452E IRG4BC30U O-220AB O-220AB	PDF
E802 Abstract: No abstract text available Text: PD - 95692 IRG4BC30U-SPbF • Lead-Free www.irf.com 8/31/04 IRG4BC30U-SPbF 2 www.irf.com IRG4BC30U-SPbF www.irf.com 3 IRG4BC30U-SPbF 4 www.irf.com IRG4BC30U-SPbF www.irf.com 5 IRG4BC30U-SPbF 6 www.irf.com IRG4BC30U-SPbF www.irf.com 7 IRG4BC30U-SPbF D2Pak Package Outline	Original	IRG4BC30U-SPbF EIA-418. E802	PDF
ic AM 12A Abstract: IRG4BC30U Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91452E IRG4BC30U O-220AB O-220AB ic AM 12A IRG4BC30U	PDF
Untitled Abstract: No abstract text available Text: PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter	Original	PD-94810A IRG4BC30UDPbF O-220AB	PDF

diode Marking code WT Abstract: IRF1010 transistor IC 12A 400v TO220AB IGBT Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 diode Marking code WT IRF1010 transistor IC 12A 400v TO220AB IGBT	PDF
1452D Abstract: IRG4BC30U 555 triangular wave Text: PD - 9.1452D IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	1452D IRG4BC30U O-220AB O-220AB 1452D IRG4BC30U 555 triangular wave	PDF
AN-994 Abstract: IRG4BC30U-S m 60 n 03 g10 Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC30U-S AN-994 IRG4BC30U-S m 60 n 03 g10	PDF
Untitled Abstract: No abstract text available Text: PD - 95692 IRG4BC30U-SPbF • Lead-Free www.irf.com 8/31/04 IRG4BC30U-SPbF 2 www.irf.com IRG4BC30U-SPbF www.irf.com 3 IRG4BC30U-SPbF 4 www.irf.com IRG4BC30U-SPbF www.irf.com 5 IRG4BC30U-SPbF 6 www.irf.com IRG4BC30U-SPbF www.irf.com 7 IRG4BC30U-SPbF D2Pak Package Outline	Original	IRG4BC30U-SPbF EIA-418.	PDF
Untitled Abstract: No abstract text available Text: PD - 95169A IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	5169A IRG4BC30UPbF O-220AB O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter	Original	PD-94810A IRG4BC30UDPbF O-220AB	PDF
AN-994 Abstract: IRG4BC30U-S Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC30U-S AN-994 IRG4BC30U-S	PDF
Untitled Abstract: No abstract text available Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	OCR Scan	IRG4BC30U	PDF
Untitled Abstract: No abstract text available Text: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode	OCR Scan	IRG4BC30UD T0-220AB	PDF
irg4bc30ud Abstract: BH rn transistor Text: International Iö R Rectifier PD 9.1453A IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode	OCR Scan	IRG4BC30UD irg4bc30ud BH rn transistor	PDF

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Infineon Technologies AG IRG4BC30U

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IRG4BC30U Datasheets (19)

IRG4BC30U Datasheets Context Search

IRG4BC30UD

IRG4BC30U

transistor A6t 75

IRF1010

IGBT 600V 12A

Untitled

1453a

IRG4BC30U

Untitled

Untitled

Untitled

E802

ic AM 12A

Untitled

diode Marking code WT

1452D

AN-994

Untitled

Untitled

Untitled

AN-994

Untitled

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irg4bc30ud