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Infineon Technologies AG IRG4BC30U-S IGBT 600V 23A 100W D2PAK
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DigiKey	IRG4BC30U-S	Tube			250	1 - 10 - 100 - 1000 $1.72444 10000 $1.72444	Buy Now
Infineon Technologies AG IRG4BC30K-S IGBT 600V 28A 100W D2PAK
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DigiKey	IRG4BC30K-S	Tube			250	1 - 10 - 100 - 1000 $1.579 10000 $1.579	Buy Now
Infineon Technologies AG IRG4BC30SPBF IGBT 600V 34A 100W TO220AB
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DigiKey	IRG4BC30SPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IRG4BC30SPBF	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	IRG4BC30SPBF		5,370		1	1 $1.34 10 $1.34 100 $1.26 1000 $1.14 10000 $1.14	Buy Now
Rochester Electronics LLC IRG4BC30SPBF IGBT 600V 34A TO220AB
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DigiKey	IRG4BC30SPBF	Bulk			216	1 - 10 - 100 - 1000 $1.39 10000 $1.39	Buy Now
Rochester Electronics LLC AUIRG4BC30S-S AUIRG4B30 - AUTOMOTIVE IGBT DISC
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DigiKey	AUIRG4BC30S-S	Bulk			182	1 - 10 - 100 - 1000 $1.65 10000 $1.65	Buy Now
	AUIRG4BC30S-S	Bulk			182	1 - 10 - 100 - 1000 $1.65 10000 $1.65	Buy Now

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IRG4BC30 Datasheets (110)

Part	Manufacturer	Description	Datasheet Type	PDF
IRG4BC30	International Rectifier	Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V	Original	PDF
IRG4BC30F	International Rectifier	Fast Speed IGBT	Original	PDF
IRG4BC30F	International Rectifier	600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30F with Standard Packaging	Original	PDF
IRG4BC30F	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4BC30FD	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC30FD with Standard Packaging	Original	PDF
IRG4BC30FD	International Rectifier	IRGP440UD2	Original	PDF
IRG4BC30FD	International Rectifier	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode	Original	PDF
IRG4BC30FD1	International Rectifier	600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; A IRG4BC30FD1 with Standard Packaging	Original	PDF
IRG4BC30FD1	International Rectifier	600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode	Original	PDF
IRG4BC30FD1	International Rectifier	600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode	Original	PDF
IRG4BC30FD1PbF	International Rectifier	TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB	Original	PDF
IRG4BC30FD1PBF	International Rectifier	600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; Similar to IRG4BC30FD1 with Lead Free Packaging	Original	PDF
IRG4BC30FDPbF	International Rectifier	TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB	Original	PDF
IRG4BC30FDPBF	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30FD with Lead Free Packaging	Original	PDF

IRG4BC30FD-S	International Rectifier	TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK	Original	PDF
IRG4BC30FD-S	International Rectifier	600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging	Original	PDF
IRG4BC30FD-SPbF	International Rectifier	TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK	Original	PDF
IRG4BC30FD-SPBF	International Rectifier	600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; Similar to IRG4BC30FD-S with Lead Free Packaging	Original	PDF
IRG4BC30FD-STRR	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK	Original	PDF
IRG4BC30FDSTRRP	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK	Original	PDF

IRG4BC30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
E1789 Abstract: No abstract text available Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30WPbF O-220AB E1789	PDF
IRG4BC30UD Abstract: No abstract text available Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD	PDF
IRG4BC30FD Abstract: diode bridge LT 405 Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	-91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405	PDF
AN-994 Abstract: No abstract text available Text: PD - 95693A IRG4BC30W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	5693A IRG4BC30W-SPbF 150W57) EIA-418. AN-994	PDF
IRG4BC30U Abstract: No abstract text available Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91452E IRG4BC30U O-220AB O-220AB IRG4BC30U	PDF
motor IG 2200 19 X 000 15 R Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high	Original	-91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S	PDF
Untitled Abstract: No abstract text available Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	-95651A IRG4BC30FPbF O-220AB O-220AB	PDF
transistor A6t 75 Abstract: A6T TRANSISTOR Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	5692A IRG4BC30U-SPbF VC957) EIA-418. transistor A6t 75 A6T TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S topol22	PDF
AN-994 Abstract: IRGBC30K-S IRGBC30M-S Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high	Original	IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S	PDF
IRGBC30K Abstract: IRGBC30M marking code TR Text: PD - 95641 IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high	Original	IRG4BC30KPbF O-220AB IRGBC30K IRGBC30M marking code TR	PDF
IRGBC30MD2 Abstract: IRGBC30KD2 IRG4BC30KDPbF Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high	Original	IRG4BC30KDPbF O-220AB. O-220AB IRGBC30MD2 IRGBC30KD2 IRG4BC30KDPbF	PDF
Untitled Abstract: No abstract text available Text: PD - 95786 IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency	Original	IRG4BC30S-SPbF EIA-418.	PDF
IRF1010 Abstract: No abstract text available Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IRF1010	PDF

IRF1010 Abstract: No abstract text available Text: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC30SPbF O-220AB O-220AB IRF1010 IRF1010	PDF
Untitled Abstract: No abstract text available Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC30UPbF O-220AB O-220AB -220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter	Original	5970A IRG4BC30FD-SPbF 20kHz EIA-418.	PDF
AN-994 Abstract: IRGBC30KD2-S IRGBC30MD2-S Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching	Original	IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S	PDF
AN-994 Abstract: IRGBC30KD2-S IRGBC30MD2-S Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching	Original	-95674A IRG4BC30KD-SPbF Minimized57) EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S	PDF
AN-994 Abstract: IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode Text: PD -91594B PRELIMINARY IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V	Original	-91594B IRG4BC30KD-S AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode	PDF
1453a Abstract: IRG4BC30UD ITT 451 DIODE Text: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	IRG4BC30UD O-220AB 1453a IRG4BC30UD ITT 451 DIODE	PDF
Untitled Abstract: No abstract text available Text: International Iö R Rectifier PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .	OCR Scan	IRG4BC30FD O-220AB conT0-220AB	PDF
Untitled Abstract: No abstract text available Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	OCR Scan	IRG4BC30U	PDF
Untitled Abstract: No abstract text available Text: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode	OCR Scan	IRG4BC30UD T0-220AB	PDF

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IRG4BC30 Price and Stock

Infineon Technologies AG IRG4BC30U-S

Infineon Technologies AG IRG4BC30K-S

Infineon Technologies AG IRG4BC30SPBF

Rochester Electronics LLC IRG4BC30SPBF

Rochester Electronics LLC AUIRG4BC30S-S

IRG4BC30 Datasheets (110)

IRG4BC30 Datasheets Context Search

E1789

IRG4BC30UD

IRG4BC30FD

AN-994

IRG4BC30U

motor IG 2200 19 X 000 15 R

Untitled

transistor A6t 75

Untitled

AN-994

IRGBC30K

IRGBC30MD2

Untitled

IRF1010

IRF1010

Untitled

Untitled

AN-994

AN-994

AN-994

1453a

Untitled

Untitled

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