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    IRG4BC20UD Search Results

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    IRG4BC20UD Price and Stock

    Rochester Electronics LLC IRG4BC20UDSTRRP

    ULTRAFAST COPACK IGBTWITH ULTRAF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20UDSTRRP Tube 5,028 189
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    • 1000 $1.59
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    Infineon Technologies AG IRG4BC20UD

    IGBT 600V 13A 60W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20UD Tube 50
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    • 100 $4.1636
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    Infineon Technologies AG IRG4BC20UD-S

    IGBT 600V 13A 60W D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20UD-S Tube 300
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    • 1000 $1.6158
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    Infineon Technologies AG IRG4BC20UDPBF

    IGBT 600V 13A 60W TO220AB
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    Infineon Technologies AG IRG4BC20UD-SPBF

    IGBT 600V 13A 60W D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20UD-SPBF Tube
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    Find more IRG4BC20UD price and stock on Findchips.com

    IRG4BC20UD Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4BC20UD International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; A IRG4BC20UD with Standard Packaging Original PDF
    IRG4BC20UD International Rectifier IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC20UD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20UD International Rectifier UltraFast CoPack IGBT Original PDF
    IRG4BC20UD International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 13A, TO-220 CoPack Scan PDF
    IRG4BC20UDPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20UD with Lead Free Packaging Original PDF
    IRG4BC20UDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3TO-220AB Original PDF
    IRG4BC20UDS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, Original PDF
    IRG4BC20UD-S International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; A IRG4BC20UD-S with Standard Packaging Original PDF
    IRG4BC20UD-S International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20UD-SPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC20UD-S with Lead Free Packaging Original PDF
    IRG4BC20UD-SPBF International Rectifier Original PDF
    IRG4BC20UD-STRL International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRL International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R Original PDF
    IRG4BC20UDSTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRR International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R Original PDF
    IRG4BC20UDSTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF

    IRG4BC20UD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 100v 200A

    Abstract: transistor irf 840 IRF 840 equivalent
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor irf 840 IRF 840 equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF PD-91449C IRG4BC20UD 200kHz O-220AB

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    IRF 042

    Abstract: IRG4BC20UDPBF
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF

    diode bridge LT 405

    Abstract: IRG4BC20UD
    Text: PD 9.1449A IRG4BC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UD O-220AB diode bridge LT 405 IRG4BC20UD

    Untitled

    Abstract: No abstract text available
    Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-SPbF 200kHz

    Untitled

    Abstract: No abstract text available
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB

    IRG4BC20UD

    Abstract: No abstract text available
    Text: PD 91449B IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91449B IRG4BC20UD O-220AB opt52-7105 IRG4BC20UD

    IRG4BC20UD equivalent

    Abstract: IRG4BC20UD PD-91449C
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF PD-91449C IRG4BC20UD 200kHz O-220AB IRG4BC20UD equivalent IRG4BC20UD PD-91449C

    IRF 504

    Abstract: 005 418 irf 144
    Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-SPbF 200kHz IRF 504 005 418 irf 144

    Untitled

    Abstract: No abstract text available
    Text: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5565A IRG4BC20UD-SPbF 200kHz

    Untitled

    Abstract: No abstract text available
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz

    IRG4BC20UD-S

    Abstract: 50s MARKING CODE
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz IRG4BC20UD-S 50s MARKING CODE

    IRG4BC20UD-S

    Abstract: No abstract text available
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz fo197) IRG4BC20UD-S

    irf 100v 200A

    Abstract: transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT

    irf 100v 200A

    Abstract: No abstract text available
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UDPbF O-220AB irf 100v 200A

    IRG4BC20UD-SPBF

    Abstract: No abstract text available
    Text: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5565A IRG4BC20UD-SPbF 200kHz IRG4BC20UD-SPBF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC20UD T0220AB transistor IR 840 OZ930

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC20UD T0-220AB S5452