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    IRG4BC20U Search Results

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    IRG4BC20U Price and Stock

    Rochester Electronics LLC IRG4BC20UDSTRRP

    ULTRAFAST COPACK IGBTWITH ULTRAF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20UDSTRRP Tube 5,028 189
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    Infineon Technologies AG IRG4BC20U

    IGBT 600V 13A 60W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20U Tube 450
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    Infineon Technologies AG IRG4BC20UD

    IGBT 600V 13A 60W TO220AB
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    DigiKey IRG4BC20UD Tube 50
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    Infineon Technologies AG IRG4BC20U-S

    IGBT 600V 16A 60W TO220-3
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    DigiKey IRG4BC20U-S Tube 450
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    Infineon Technologies AG IRG4BC20UD-S

    IGBT 600V 13A 60W D2PAK
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    DigiKey IRG4BC20UD-S Tube 300
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    Find more IRG4BC20U price and stock on Findchips.com

    IRG4BC20U Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4BC20U International Rectifier 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20U with Standard Packaging Original PDF
    IRG4BC20U International Rectifier UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC20U International Rectifier Fast Speed IGBT Original PDF
    IRG4BC20UD International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; A IRG4BC20UD with Standard Packaging Original PDF
    IRG4BC20UD International Rectifier IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC20UD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20UD International Rectifier UltraFast CoPack IGBT Original PDF
    IRG4BC20UD International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 13A, TO-220 CoPack Scan PDF
    IRG4BC20UDPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20UD with Lead Free Packaging Original PDF
    IRG4BC20UDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3TO-220AB Original PDF
    IRG4BC20UDS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, Original PDF
    IRG4BC20UD-S International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; A IRG4BC20UD-S with Standard Packaging Original PDF
    IRG4BC20UD-S International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20UD-SPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC20UD-S with Lead Free Packaging Original PDF
    IRG4BC20UD-SPBF International Rectifier Original PDF
    IRG4BC20UD-STRL International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRL International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R Original PDF
    IRG4BC20UDSTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 60W D2PAK Original PDF
    IRG4BC20UD-STRR International Rectifier TRANS IGBT CHIP N-CH 600V 13A 3D2-PAK T/R Original PDF

    IRG4BC20U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4BC20U

    Abstract: IRG4BC20
    Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20

    irf 100v 200A

    Abstract: transistor irf 840 IRF 840 equivalent
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor irf 840 IRF 840 equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF PD-91449C IRG4BC20UD 200kHz O-220AB

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    IRF 042

    Abstract: IRG4BC20UDPBF
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF

    diode bridge LT 405

    Abstract: IRG4BC20UD
    Text: PD 9.1449A IRG4BC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UD O-220AB diode bridge LT 405 IRG4BC20UD

    Untitled

    Abstract: No abstract text available
    Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-SPbF 200kHz

    IRG4BC20UPbF

    Abstract: No abstract text available
    Text: PD - 95445A IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5445A IRG4BC20UPbF O-220AB O-220AB IRG4BC20UPbF

    IRG4BC20U

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20U O-220AB O-220Ai IRG4BC20U

    Untitled

    Abstract: No abstract text available
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB

    IRG4BC20UD

    Abstract: No abstract text available
    Text: PD 91449B IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91449B IRG4BC20UD O-220AB opt52-7105 IRG4BC20UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 95445A IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5445A IRG4BC20UPbF O-220AB O-220AB

    IRG4BC20UD equivalent

    Abstract: IRG4BC20UD PD-91449C
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF PD-91449C IRG4BC20UD 200kHz O-220AB IRG4BC20UD equivalent IRG4BC20UD PD-91449C

    IRF 504

    Abstract: 005 418 irf 144
    Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-SPbF 200kHz IRF 504 005 418 irf 144

    Untitled

    Abstract: No abstract text available
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz

    Untitled

    Abstract: No abstract text available
    Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91448D IRG4BC20U O-220AB O-220AB

    IRG4BC20UD-S

    Abstract: 50s MARKING CODE
    Text: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-S 200kHz IRG4BC20UD-S 50s MARKING CODE

    555 triangular wave

    Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
    Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UPbF O-220AB O-220AB O-220AB. 555 triangular wave transistor 45 f 122 Inductive Load Driver igbt transistor

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC20UD T0220AB transistor IR 840 OZ930

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1448C IRG4BC20U TQ-220AB 002flb45

    transistor iqr

    Abstract: g-50Q IRG4BC20U
    Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20U TQ-220AB transistor iqr g-50Q IRG4BC20U

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1448B International I R Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1448B IRG4BC20U TQ-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC20UD T0-220AB S5452

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20U O-22QAB 100eters