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    IRG4BC20F Price and Stock

    Infineon Technologies AG IRG4BC20F

    IGBT 600V 16A 60W TO220AB
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    Infineon Technologies AG IRG4BC20FD

    IGBT 600V 16A 60W TO220AB
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    DigiKey IRG4BC20FD Tube 300
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    Infineon Technologies AG IRG4BC20F-S

    IGBT 600V 16A 60W TO220-3
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    DigiKey IRG4BC20F-S Tube 50
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    Infineon Technologies AG IRG4BC20FPBF

    IGBT 600V 16A 60W TO220AB
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    Infineon Technologies AG IRG4BC20FD-S

    IGBT 600V 16A 60W D2PAK
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    DigiKey IRG4BC20FD-S Tube 150
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    Find more IRG4BC20F price and stock on Findchips.com

    IRG4BC20F Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4BC20F International Rectifier Fast Speed IGBT Original PDF
    IRG4BC20F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC20F International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20F with Standard Packaging Original PDF
    IRG4BC20FD International Rectifier Fast CoPack IGBT Original PDF
    IRG4BC20FD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC20FD International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC20FD with Standard Packaging Original PDF
    IRG4BC20FDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3TO-220AB Original PDF
    IRG4BC20FDPBF International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20FD with Lead Free Packaging Original PDF
    IRG4BC20FD-S International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-S International Rectifier Fast CoPack IGBT Original PDF
    IRG4BC20FD-SPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK Original PDF
    IRG4BC20FD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK Original PDF
    IRG4BC20FD-STRL International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-STRL International Rectifier Original PDF
    IRG4BC20FDSTRLP International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2PAK T/R Original PDF
    IRG4BC20FD-STRLPBF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK T/R Original PDF
    IRG4BC20FD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK Original PDF
    IRG4BC20FD-STRR International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-STRR International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20FDSTRRP International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2PAK T/R Original PDF

    IRG4BC20F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRG4BC20FD-S
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S optimize20 AN-994 IRG4BC20FD-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FDPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20FPbF O-220AB O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20FPbF O-220AB O-220AB

    f1010

    Abstract: No abstract text available
    Text: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FDPbF O-220AB f1010

    IR igbt gate driver ic

    Abstract: TRANSISTOR 1602 IRG4BC20F
    Text: PD - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20F O-220AB O-220AB IR igbt gate driver ic TRANSISTOR 1602 IRG4BC20F

    IRG4BC20FD

    Abstract: IRG4BC20F
    Text: IRG4BC20FD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature figure 20 ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot.


    Original     		PDF IRG4BC20FD O-220AB IRG4BC20FD IRG4BC20F

    IRG4BC20F

    Abstract: No abstract text available
    Text: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1602A IRG4BC20F O-220AB O-220AB IRG4BC20F

    IRG4BC20FD

    Abstract: No abstract text available
    Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1601A IRG4BC20FD O-220AB optimiz52-7105 IRG4BC20FD

    Untitled

    Abstract: No abstract text available
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
    Text: PD 9.1601 IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FD O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD

    IRG4BC20FD

    Abstract: No abstract text available
    Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1601A IRG4BC20FD O-220AB optimiz20 IRG4BC20FD

    Untitled

    Abstract: No abstract text available
    Text: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1602A IRG4BC20F O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20FPbF O-220AB O-220AB

    AN-994

    Abstract: IRG4BC20FD-S
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S optimize52-7105 AN-994 IRG4BC20FD-S

    IRG4BC20FD-SPbF

    Abstract: AN-994 IRF530S
    Text: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FD-SPbF IRG4BC20FD-SPbF AN-994 IRF530S

    IRG4BC20F

    Abstract: No abstract text available
    Text: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1602A IRG4BC20F O-220AB O-220AB IRG4BC20F

    Untitled

    Abstract: No abstract text available
    Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1601A IRG4BC20FD O-220AB

    f1010

    Abstract: No abstract text available
    Text: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FDPbF O-220AB O-220AB. f1010

    AN-994

    Abstract: IRF530S 2740 D
    Text: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FD-SPbF EIA-418. AN-994 IRF530S 2740 D

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC20FD O-22QAB

    ECJF

    Abstract: No abstract text available
    Text: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20F O-220AB ECJF

    15QQ

    Abstract: T0320 iCR 406 J
    Text: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC20FD 00nof3tion T0-220AB 15QQ T0320 iCR 406 J

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier P D - 9. 1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1- 5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20F O-22QAB 6266C