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    IRFS6 Search Results

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    IRFS6 Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC IRFS640A

    N-CHANNEL POWER MOSFET
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    DigiKey IRFS640A Bulk 606
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    Rochester Electronics LLC IRFS630B

    9A, 200V, 0.4OHM, N-CHANNEL MOSF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS630B Bulk 533
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    Rochester Electronics LLC IRFS654B

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS654B Bulk 278
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    Rochester Electronics LLC IRFS630A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS630A Bulk 683
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    Rochester Electronics LLC IRFS634B

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS634B Bulk 1,665
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    IRFS6 Datasheets (102)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRFS610A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS610A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS610A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS610B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS610B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    IRFS610B_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFS610 & IRFS610A Original PDF
    IRFS614A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS614B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFS614B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRFS614B_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFS614 & IRFS614A Original PDF
    IRFS620 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS620 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS620A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS620A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS620B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    IRFS620B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS620B_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A Original PDF
    IRFS621 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS621 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS622 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    IRFS6 Datasheets Context Search

    Catalog Datasheet
    MFG & Type
    Document Tags
    PDF

    IRFS620B

    Abstract: No abstract text available
    Text: IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS620B IRFS620B PDF

    IRFS644B

    Abstract: No abstract text available
    Text: IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS644B IRFS644B PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS650B PDF

    irf 2203

    Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
    Text: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF610B/IRFS610B IRF610B O-220-3 FP001 irf 2203 IRF610B_FP001 IRF*_FP001 IRF 870 irf 146 PDF

    IRFS624B

    Abstract: No abstract text available
    Text: IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS624B O-220F IRFS624B PDF

    IRF624B

    Abstract: IRFS624B IRF series
    Text: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF624B/IRFS624B O-220 IRF624B IRFS624B IRF series PDF

    IRFS614B

    Abstract: IRF614B
    Text: IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF614B/IRFS614B O-220 IRFS614B IRF614B PDF

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF640B/IRFS640B IRF640B irfs640b IRF series PDF

    IRF644B

    Abstract: IRFS644B IRF series mosfet irf 150
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150 PDF

    IRFS650A

    Abstract: No abstract text available
    Text: IRFS650A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 15.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    IRFS650A O-220F IRFS650A PDF

    IRFS640B

    Abstract: No abstract text available
    Text: IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRFS640B IRFS640B PDF

    250M

    Abstract: IRFS620 IRFS621
    Text: N-CHANNEL POWER MOSFETS IRFS620/621 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    IRFS620/621 IRFS620 IRFS621 O-220 IRFS620/621 VDS-40V. 71b4142 250M PDF

    irf P-Channel MOSFET audio

    Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
    Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:


    OCR Scan
    SS452 T-39-19 IRFS620 IRFSG21 T0-220AB IRF9620, IRF9621, IRF9622, IRF9623 irf P-Channel MOSFET audio IRF610 complementary F9622 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620 PDF

    mospet

    Abstract: No abstract text available
    Text: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS = 200V


    OCR Scan
    IRFS650A mospet PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFS634/635 FEATURES • • • • • • • TO-220F Low er R ds ON Im proved in d u c tive ru g g e d n e s s F ast sw itch in g tim es R ug ged polysilico n g a te cell stru ctu re Low er in p u t c a p a c ita n c e E x te n d e d safe o p e ra tin g area


    OCR Scan
    IRFS634/635 O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS654A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = 250 V ^ D S o n = 0 . 1 4 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan
    IRFS654A PDF

    IRFS630

    Abstract: IRFS631 250M
    Text: N-CHANNEL POWER MOSFETS IRFS630/631 FEATURES • Lower R ds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    IRFS630/631 IRFS630 IRFS631 O-220F 250M PDF

    250M

    Abstract: IRFS624
    Text: N-CHANNEL POWER MOSFETS IRFS624 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    IRFS624 IRFS624 O-220 250M PDF

    LF33A

    Abstract: ISE Electronics IRFS624 IRFS625 samsung MOSFET
    Text: S A MS UN G E L E C T R O N I C S INC T l b M i M E G ü l ? 3 4 cl ‘ifl'i • isrißK t?E ]> N-CHANNEL POWER MOSFETS IRFS624/625 FEATURES • ■ • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    D017341 IRFS624/625 IRFS624/625 IRFS624 IRFS625 7U4145 DD173S3 LF33A ISE Electronics samsung MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS610A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0 n) ■ 1.169 £1 (Typ.) LO Rugged Gate Oxide Technology


    OCR Scan
    IRFS610A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS650A Advanced Power MOSFET FEATURES B V dss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan
    IRFS650A T0-220F PDF

    dts25

    Abstract: l79A FS5F IRFS644a
    Text: IRFS644A Advanced Power MOSFET FEATURES BV,OSS = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jaA M ax. @ ■ ^DS(on) " 0 28


    OCR Scan
    IRFS644A -220F dts25 l79A FS5F IRFS644a PDF

    DD313

    Abstract: IRFS614A
    Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V


    OCR Scan
    IRFS614A DD313 IRFS614A PDF