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    IRFR3418 Search Results

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    IRFR3418 Price and Stock

    Infineon Technologies AG IRFR3418PBF

    MOSFET N-CH 80V 70A DPAK
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    Infineon Technologies AG IRFR3418TRPBF

    MOSFET N-CH 80V 70A DPAK
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    Infineon Technologies AG IRFR3418TRLPBF

    MOSFET N-CH 80V 70A DPAK
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    DigiKey IRFR3418TRLPBF Reel 6,000
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    IRFR3418 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFR3418 International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418 International Rectifier HEXFET Power Mosfet Original PDF
    IRFR3418PBF International Rectifier Original PDF
    IRFR3418PBF International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TR International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TR International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TRL International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TRL International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TRLPBF International Rectifier Original PDF
    IRFR3418TRLPBF International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package Original PDF
    IRFR3418TRPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 70A DPAK Original PDF
    IRFR3418TRPBF International Rectifier Original PDF

    IRFR3418 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF AN1001

    Abstract: AN1001 IRFR3418 IRFU3418
    Text: PD - 94452A IRFR3418 IRFU3418 HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF 4452A IRFR3418 IRFU3418 AN1001) 25ntinuous AN-994. IRF AN1001 AN1001 IRFR3418 IRFU3418

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: PD - 95516 IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF IRFR3418PbF IRFU3418PbF AN1001) IRFR3418 IRFU3418 AN-994. MOSFET IRF 380

    AN1001

    Abstract: IRFR3418 IRFU3418
    Text: PD - 94452A IRFR3418 IRFU3418 HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF 4452A IRFR3418 IRFU3418 AN1001) 25ance AN-994. AN1001 IRFR3418 IRFU3418

    IRF 260 N

    Abstract: AN1001 EIA-541 IRFR120 IRFR3418 IRFU120 IRFU3418 U120
    Text: PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF 5516A IRFR3418PbF IRFU3418PbF AN1001) IRFR3418 IRFU3418 AN-994. IRF 260 N AN1001 EIA-541 IRFR120 IRFR3418 IRFU120 IRFU3418 U120

    AN1001

    Abstract: EIA-541 IRFR120 IRFR3418 IRFU3418 U120 b965
    Text: PD - 94452 IRFR3418 IRFU3418 HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF IRFR3418 IRFU3418 AN1001) AN-994. AN1001 EIA-541 IRFR120 IRFR3418 IRFU3418 U120 b965

    AN1001

    Abstract: EIA-541 IRFR120 IRFR3418 IRFU120 IRFU3418 U120
    Text: PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF 5516A IRFR3418PbF IRFU3418PbF AN1001) IRFR3418 IRFU3418 AN-994. AN1001 EIA-541 IRFR120 IRFR3418 IRFU120 IRFU3418 U120

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter