ME9P06E-F
Abstract: MTD4N18 mtd8p me12n06
Text: N & P CHANNEL POWER MOSFETS N CHANNEL ENHANCEMENT MODE D PAK Outline Equivalents Part Number Int. Rectifier Motorola ME13N06EF IRFR024 – ME12N06ELF † IRLR024 – ME8N06EF * IRFR014 MTD8N06E ME6N10F IRFR120 MTD5N05/06/10 ME4N20F IRFR220 MTD4N18/20 *: Avalanche Rated
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ME13N06EF
IRFR024
ME12N06ELF
IRLR024
ME8N06EF
IRFR014
MTD8N06E
ME6N10F
IRFR120
MTD5N05/06/10
ME9P06E-F
MTD4N18
mtd8p
me12n06
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IRFR120
Abstract: IRFU120 TB334
Text: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel
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O251AA
O252AA
IRFR120,
IRFU120
IRFR120
IRFU120
TB334
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ifr120
Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
ifr120
IFU120
IFr-120
IRFR120
IRFR120T
IRFU120
TB334
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Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
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IRFU120
Abstract: IRFR120 motor IRFR120 TB334
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
IRFU120
IRFR120 motor
IRFR120
TB334
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IRFR7740
Abstract: No abstract text available
Text: StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFR7740PbF
IRFU7740PbF
JESD47F)
IRFR7740
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFR7540PbF
IRFU7540PbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFR7746PbF
IRFU7746PbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFR7546PbF
IRFU7546PbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: IRFR825TRPBF VDSS RDS on typ. Trr typ. Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications 500V ID 92ns 1.05Ω 6.0A D-Pak IRFR825TRPBF Features and Benefits • Fast body diode eliminates the need for external
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IRFR825TRPBF
O-252AA)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 96433A IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external
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6433A
IRFR825TRPbF
EIA-481
EIA-541.
EIA-481.
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irfR825
Abstract: MAX1783 101NS irfr825PBF
Text: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external
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IRFR825TRPbF
EIA-481
EIA-541.
EIA-481.
irfR825
MAX1783
101NS
irfr825PBF
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irfR812
Abstract: IRFR812TRPBF IRF 810
Text: PD -97773 IRFR812TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V Parameter 75ns 1.85Ω 3.6A D Features and Benefits • Fast body diode eliminates the need for external
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IRFR812TRPbF
EIA-481
EIA-541.
EIA-481.
irfR812
IRFR812TRPBF
IRF 810
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Untitled
Abstract: No abstract text available
Text: PD -97773 IRFR812TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V Parameter 75ns 1.85Ω 3.6A D Features and Benefits • Fast body diode eliminates the need for external
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IRFR812TRPbF
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external
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IRFR825TRPbF
EIA-481
EIA-541.
EIA-481.
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IRFU3412
Abstract: AN-994 IRFR120 IRFR3412 U120 irf 064 power MOSFET IRF data
Text: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRFR3412
IRFU3412
EIA-481
EIA-541.
EIA-481.
IRFU3412
AN-994
IRFR120
IRFR3412
U120
irf 064
power MOSFET IRF data
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AN-994
Abstract: EIA-541 IRFR120 97003
Text: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4RC10KDPbF
O-252AA
cont16
EIA-481
EIA-541.
EIA-481.
AN-994
EIA-541
IRFR120
97003
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IRFR7446PBF
Abstract: No abstract text available
Text: StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies
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IRFR7446PbF
IRFR7446TRPbF
JESD47F
D-020D
IRFR7446PBF
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AN-994
Abstract: EIA-541 IRFR120
Text: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4RC10KDPbF
O-252AA
O-252AA)
EIA-481
EIA-541.
EIA-481.
AN-994
EIA-541
IRFR120
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies
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IRFR7446PbF
IRFR7446TRPbF
251mJ
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Untitled
Abstract: No abstract text available
Text: IRFR7440PbF IRFR7440PBF IRFR7440TRPBF IRFU7440PbF IRFU7440PBF Applications Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications
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IRFR7440PbF
IRFR7440TRPBF
IRFU7440PbF
IRFU7440TRPbF
IRFR7440PBF
O-251AA)
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Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120 Semiconductor Ju ly 1999 D ata S h eet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR120,
IRFU120
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Untitled
Abstract: No abstract text available
Text: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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typesRFU121
IRFR120,
RFR121,
IRFU120,
RFU121
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IFU120
Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
Text: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN
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120/1R
O-252AA
IRFR120,
IRFR121,
IRFU120,
IRFU121
IFU120
fu120
IFU-121
fr120
Harris IRFR120
IRFU N-Channel Power MOSFETs
a 4556
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