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    IRFR 210 Search Results

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    IRFR 210 Price and Stock

    Rochester Electronics LLC IRFR210BTF

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210BTF Bulk 224,874 1,158
    • 1 -
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    • 10000 $0.26
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    Vishay Siliconix IRFR210PBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210PBF Tube 13,463 1
    • 1 $0.79
    • 10 $0.79
    • 100 $0.6376
    • 1000 $0.4283
    • 10000 $0.42363
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    Vishay Siliconix IRFR210TRPBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRPBF Reel 6,000 2,000
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    IRFR210TRPBF Cut Tape 1,958 1
    • 1 $1.13
    • 10 $0.924
    • 100 $0.7188
    • 1000 $0.49632
    • 10000 $0.49632
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    RS IRFR210TRPBF Bulk 10
    • 1 -
    • 10 $0.75
    • 100 $0.71
    • 1000 $0.64
    • 10000 $0.64
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    New Advantage Corporation IRFR210TRPBF 8,000 1
    • 1 -
    • 10 -
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    • 10000 $0.48
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    Vishay Siliconix IRFR210TRPBF-BE3

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRPBF-BE3 Reel 6,000 2,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.42363
    		Buy Now
    IRFR210TRPBF-BE3 Cut Tape 1,885 1
    • 1 $1.13
    • 10 $0.924
    • 100 $0.7188
    • 1000 $0.49632
    • 10000 $0.49632
    		Buy Now

    Vishay Siliconix IRFR210TRLPBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRLPBF Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.42363
    		Buy Now
    IRFR210TRLPBF Cut Tape 1,671 1
    • 1 $1.13
    • 10 $0.924
    • 100 $0.7188
    • 1000 $0.49632
    • 10000 $0.49632
    		Buy Now
    Find more IRFR 210 price and stock on Findchips.com

    IRFR 210 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFR210 International Rectifier Power MOSFET Original PDF
    IRFR210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A DPAK Original PDF
    IRFR210 International Rectifier N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm Scan PDF
    IRFR210 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFR210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR210 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR210 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFR210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 2.6A, Pkg Style TO-252AA Scan PDF
    IRFR210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR210 Unknown FET Data Book Scan PDF
    IRFR210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR210 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR210 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFR210 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFR210A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFR210A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR210A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR210B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFR210B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF

    IRFR 210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		PDF IRFR/U110A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		PDF IRFR/U210A

    IRFR110A

    Abstract: No abstract text available
    Text: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		PDF IRFR/U110A O-252 IRFR110A

    IRFZ44N APPLICATION NOTE

    Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91318B IRFR/U1205 IRFR1205) IRFU1205) IRFZ44N APPLICATION NOTE IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit

    IRFZ44N

    Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91318B IRFR/U1205 IRFR1205) IRFU1205) IRFZ44N IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205

    Untitled

    Abstract: No abstract text available
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91318B IRFR/U1205 IRFR1205) IRFU1205)

    ED 81a

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U234A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 6.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRFR/U234A ED 81a

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U024A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.07Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 15 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V


    Original     		PDF IRFR/U024A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U1205 D -P A K T O -252 A A l l l l l I-P A K T O -25 1A A Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.


    Original     		PDF IRFR/U1205 IRFR1205) IRFU1205) O-252AA

    diode AE 81A

    Abstract: RJ 66a irfr 146 AE 81A RJ 81A DIODE rj 81a
    Text: IRFR/U234A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VDS= 250V


    OCR Scan     		PDF IRFR/U234A diode AE 81A RJ 66a irfr 146 AE 81A RJ 81A DIODE rj 81a

    mosfet kt 208

    Abstract: S47A
    Text: IRFR/U110A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b vdss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ V^ = 100V


    OCR Scan     		PDF IRFR/U110A 100tl) mosfet kt 208 S47A

    IRFZ44N APPLICATION NOTE

    Abstract: for irfz44n
    Text: PD - 91318B International IÖR Rectifier IRFR/U1205 HEXFET Power MOSFET • Ultra Low On-Resistance • Surface Mount IRFR1205 • Straight Lead (IRFU1205) • Fast Switching • Fully Avalanche Rated V dss = 55V ^D S(on) = 0 0 2 7 Q. |D = 44A Description


    OCR Scan     		PDF IRFR1205) IRFU1205) IRFZ44N APPLICATION NOTE for irfz44n

    FR9214

    Abstract: No abstract text available
    Text: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A


    OCR Scan     		PDF IRFU9214N IRFR/U9214 -250V EIA-481. FR9214

    LF33

    Abstract: IRT 1250
    Text: IRFR/Ü210A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 n A Max. @ VDS= 200V Low Rdsjon) ■ 1.250 (Typ.)


    OCR Scan     		PDF IRFR/U21GA IRFR/U210A LF33 IRT 1250

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U024A A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V


    OCR Scan     		PDF IRFR/U024A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U024A A dvanced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^ D S o n - ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 60V


    OCR Scan     		PDF IRFR/U024A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U024A A d v a n c e d Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ VDS= 60V ■ Lower R ^ on, : 0.050 £2 (Typ.)


    OCR Scan     		PDF IRFR/U024A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U234A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K


    OCR Scan     		PDF IRFR/U234A

    Fet irfz44n

    Abstract: No abstract text available
    Text: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description


    OCR Scan     		PDF 91318B Fet irfz44n

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS - 200 V Rugged Gate Oxide Technology ^ D S o n = 1.5 Q. • Lower Input Capacitance ■ Improved Gate Charge lD = 2.7 A ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V


    OCR Scan     		PDF IRFR/U210A

    irfr 210

    Abstract: No abstract text available
    Text: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS - 200 V Rugged Gate Oxide Technology ^ D S o n = 1.5 Q. • Lower Input Capacitance ■ Improved Gate Charge lD = 2.7 A ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V


    OCR Scan     		PDF IRFR/U210A irfr 210

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U234A A dvanced Power MOSEET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0 . 4 5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V ■ Lower RDS(ON) : 0.327 £1 (Typ.) CD Rugged Gate Oxide Technology


    OCR Scan     		PDF IRFR/U234A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U234A Advanced Power MOSFET FEATURES B V dss = 250 V ^DS on = 0 .4 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 6 .6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR/U234A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U 234A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0 -4 5 ÌÌ ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology 6.6 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR/U234A