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    IRFP4332 MOSFET Search Results

    IRFP4332 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRFP4332 MOSFET Datasheets Context Search

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    irfp4332

    Abstract: irfp4332 mosfet IRFB4332
    Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter


    Original     		PDF IRFC4332B O-220 irfp4332 irfp4332 mosfet IRFB4332