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    IRFP360 Price and Stock

    Vishay Siliconix IRFP360PBF

    MOSFET N-CH 400V 23A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP360PBF Tube 2,007 1
    • 1 $4.88
    • 10 $4.88
    • 100 $3.312
    • 1000 $2.52082
    • 10000 $2.37363
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    New Advantage Corporation IRFP360PBF 1,200 1
    • 1 -
    • 10 -
    • 100 $2.99
    • 1000 $2.99
    • 10000 $2.79
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    Vishay Siliconix IRFP360LCPBF

    MOSFET N-CH 400V 23A TO247-3
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    DigiKey IRFP360LCPBF Tube 1,116 1
    • 1 $3.98
    • 10 $3.98
    • 100 $2.7003
    • 1000 $2.64112
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    Vishay Siliconix IRFP360

    MOSFET N-CH 400V 23A TO247-3
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    DigiKey IRFP360 Tube
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    Vishay Siliconix IRFP360LC

    MOSFET N-CH 400V 23A TO247-3
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    DigiKey IRFP360LC Tube
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    Vishay Intertechnologies IRFP360LCPBF

    MOSFET N-CHANNEL 400V - Bulk (Alt: 38K2579)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFP360LCPBF Bulk 16 Weeks, 3 Days 1
    • 1 $7.3
    • 10 $7.3
    • 100 $7.3
    • 1000 $7.3
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    IRFP360LCPBF Bulk 12 Weeks 500
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    • 1000 $3.34639
    • 10000 $2.86258
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    Mouser Electronics IRFP360LCPBF 885
    • 1 $7.02
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    • 100 $7.02
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    Verical IRFP360LCPBF 468 4
    • 1 -
    • 10 $3.278
    • 100 $2.431
    • 1000 $1.522
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    IRFP360LCPBF 103 3
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    • 10 $2.706
    • 100 $2.706
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    Arrow Electronics IRFP360LCPBF 470 8 Weeks 1
    • 1 $3.3112
    • 10 $3.3112
    • 100 $2.4557
    • 1000 $1.5374
    • 10000 $1.5374
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    IRFP360LCPBF 103 18 Weeks 1
    • 1 $2.706
    • 10 $2.706
    • 100 $2.706
    • 1000 $2.706
    • 10000 $2.706
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    TTI IRFP360LCPBF Tube 500 25
    • 1 -
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    • 100 $2.57
    • 1000 $2.42
    • 10000 $2.38
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    TME IRFP360LCPBF 269 1
    • 1 $3.18
    • 10 $2.86
    • 100 $2.27
    • 1000 $2.27
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    New Advantage Corporation IRFP360LCPBF 9,100 1
    • 1 -
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    • 100 $3.24
    • 1000 $3.24
    • 10000 $3
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    Find more IRFP360 price and stock on Findchips.com

    IRFP360 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFP360 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFP360 Intersil 23A, 400V, 0.200 ?, N-Channel Power MOSFET Original PDF
    IRFP360 IXYS 400V fast recovery epitaxial diode (FRED) Original PDF
    IRFP360 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP360 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 23A TO-247AC Original PDF
    IRFP360 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP360 International Rectifier Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) Scan PDF
    IRFP360 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFP360 International Rectifier TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP360 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP360 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP360 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP360 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP360 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP360 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFP360 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFP360 Unknown FET Data Book Scan PDF
    IRFP360LC International Rectifier HEXFET Power Mosfet Original PDF
    IRFP360LC International Rectifier HEXFET Power MOSFET Original PDF
    IRFP360LC Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRFP360 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP360LC

    Abstract: No abstract text available
    Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFP360LC, SiHFP360LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP360LC

    Untitled

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110


    Original     		PDF IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    IRF360LC

    Abstract: No abstract text available
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


    Original     		PDF IRFP360LC 08-Mar-07 IRF360LC

    IRFP360LC

    Abstract: No abstract text available
    Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFP360LC, SiHFP360LC O-247 18-Jul-08 IRFP360LC

    IRF360LC

    Abstract: IRFP360LC IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		PDF IRFP360LC staFPE30 IRF360LC IRFP360LC IRFPE30

    IRFP360

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching


    Original     		PDF IRFP360, SiHFP360 O-247 O-247 IRFP360

    Untitled

    Abstract: No abstract text available
    Text: PD - 94951 IRFP360LCPbF • Lead-Free 1/28/04 Document Number: 91227 www.vishay.com 1 IRFP360LCPbF Document Number: 91227 www.vishay.com 2 IRFP360LCPbF Document Number: 91227 www.vishay.com 3 IRFP360LCPbF Document Number: 91227 www.vishay.com 4 IRFP360LCPbF


    Original     		PDF IRFP360LCPbF O-247AC 08-Mar-07

    irf360lc

    Abstract: ID 9302 IRFP360LC IRFPE30
    Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω


    Original     		PDF IRFP360LC IRFPE30 irf360lc ID 9302 IRFP360LC IRFPE30

    IRFP360

    Abstract: TB334
    Text: IRFP360 Data Sheet January 2002 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFP360 O-247 IRFP360 TB334

    irfp360

    Abstract: TB334
    Text: IRFP360 Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFP360 O-247 irfp360 TB334

    irfp360

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110


    Original     		PDF IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 11-Mar-11 irfp360

    Untitled

    Abstract: No abstract text available
    Text: IRFP360_RC, SiHFP360_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFP360 SiHFP360 AN609, 18-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFP360LC, SiHFP360LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP360

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110


    Original     		PDF IRFP360, SiHFP360 2002/95/EC O-247AC 11-Mar-11 IRFP360

    IRFP360

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching


    Original     		PDF IRFP360, SiHFP360 O-247 O-247 O-220 12-Mar-07 IRFP360

    ST hexfet to 247

    Abstract: IRFP360PBF 035H IRFPE30
    Text: PD - 95058 IRFP360PbF • Lead-Free www.irf.com 1 2/26/04 IRFP360PbF 2 www.irf.com IRFP360PbF www.irf.com 3 IRFP360PbF 4 www.irf.com IRFP360PbF www.irf.com 5 IRFP360PbF 6 www.irf.com IRFP360PbF TO-247AC Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFP360PbF O-247AC O-247-AC. ST hexfet to 247 IRFP360PBF 035H IRFPE30

    irfp360

    Abstract: No abstract text available
    Text: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    OCR Scan     		PDF IRFP360 O-247 D4-345 irfp360

    Untitled

    Abstract: No abstract text available
    Text: IRFP360, IRFP362 HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the


    OCR Scan     		PDF IRFP360, IRFP362 25CAPACITANCE

    T0247AC

    Abstract: IRFP450LC irfp9240
    Text: HEXFET International Power MOSFETs liôR R ectifier TO-247AC Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-247AC N-Channel “Low Charge” Part Number IRFP350LC IRFP360LC IRFP450LC IRFP460LC


    OCR Scan     		PDF O-247AC T0-247AC IRFP350LC IRFP360LC IRFP450LC IRFP460LC IRFPC50LC IRFPC60LC T0247AC irfp9240

    irfp360

    Abstract: No abstract text available
    Text: IRFP360, IRFP362 fÇ j HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the


    OCR Scan     		PDF IRFP360, IRFP362 TA17464. IRFP362 irfp360

    IRFP360

    Abstract: No abstract text available
    Text: PD-9.568B International ^ Rectifier IRFP360 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS _ 400V ^D S on - 0 - 2 0 Q


    OCR Scan     		PDF IRFP360 O-247 T0-220 O-218 IRFP360

    IRFP360

    Abstract: No abstract text available
    Text: International Eësr]Rectifier PD-9.568B IRFP360 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 400V R DS on = 0 - 2 0 0


    OCR Scan     		PDF IRFP360 O-247 T0-220 O-218 50kc2

    1RFP360

    Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
    Text: THOMSON/ DISTRIBUTOR SflE D • TD2ba73 International t o r Rectifier Cl[]05ñ04 3TD ■ HEXFET Power MOSFETs Plastic insertable Package T O -2 4 7 N-Channel Part Number V q s Drain Source Voltage (Volts) IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 IRFP360 400


    OCR Scan     		PDF O-247 TD2ba73 IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 1RFP360 IRFP443 IRFP441 1RFP360 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP448 IRFP9240 IRFP9242

    fp360

    Abstract: No abstract text available
    Text: IRFP360 IRFP362 2 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package F e a tu re s T O -2 4 7 • 20A and 23A, 400V TOP VIEW • rD S °n) = 0 .2 0 0 and 0 .2 5 0 • Single Pulse Avalanche Energy Rated • SOA Is Power-Dlssipation Limited


    OCR Scan     		PDF IRFP360 IRFP362 IRFP362 fp360