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    IRFP250 M Search Results

    IRFP250 M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board Visit Analog Devices Buy
    ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua Visit Analog Devices Buy
    ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E Visit Analog Devices Buy
    ADN4695EBRZ Analog Devices MLVDS Xcvr,FD,100M Type 2 Rx,E Visit Analog Devices Buy
    EVAL-ADN4652EB1Z Analog Devices ADN4652 SOIC-W Eval Board Visit Analog Devices Buy
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    IRFP250 M Price and Stock

    Infineon Technologies AG IRFP250MPBF

    MOSFET N-CH 200V 30A TO247AC
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    DigiKey IRFP250MPBF Tube 1,561 1
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    Avnet Americas IRFP250MPBF Bulk 16 Weeks, 3 Days 1
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    IRFP250MPBF Tube 10 Weeks 800
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    Mouser Electronics IRFP250MPBF 5,182
    • 1 $2.4
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    Verical IRFP250MPBF 2,544 8
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    IRFP250MPBF 1,505 24
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    Arrow Electronics IRFP250MPBF 2,549 10 Weeks 1
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    Newark IRFP250MPBF Bulk 9,842 1
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    RS IRFP250MPBF Bulk 5
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    TME IRFP250MPBF 66 1
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    Ameya Holding Limited IRFP250MPBF 1,200
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    EBV Elektronik IRFP250MPBF 4,800 11 Weeks 400
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    New Advantage Corporation IRFP250MPBF 4,000 1
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    Win Source Electronics IRFP250MPBF 150,811
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    International Rectifier IRFP250MPBF

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    Bristol Electronics IRFP250MPBF 50
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    IRFP250 M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP250MPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-247AC Original PDF

    IRFP250 M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA9295

    Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
    Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRFP250 TB334 O-247 TA9295 irfp250 applications IRFP250 TB334 transistor IRFP250

    IRFP250

    Abstract: irfp250 applications
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRFP250 O-247 IRFP250 irfp250 applications

    IRFP250

    Abstract: irfp250 applications irfp250 mosfet NOR gate
    Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRFP250 O-247 IRFP250 irfp250 applications irfp250 mosfet NOR gate

    transistor IRFP250

    Abstract: No abstract text available
    Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP250 TB334 transistor IRFP250

    irfp250 applications pulse transformer

    Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		PDF IRFP250, SiHFP250 O-247 O-220 18-Jul-08 irfp250 applications pulse transformer irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250

    IRFP250 application

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP250 application

    Untitled

    Abstract: No abstract text available
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP250, SiHFP250 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP250

    Abstract: irfp250 applications IRFP250PBF
    Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		PDF IRFP250, SiHFP250 O-247 O-220 IRFP250 irfp250 applications IRFP250PBF

    Irfp250 irfp460

    Abstract: FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3
    Text: Discrete MOSFETs TO-247 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-247 N-Channel HUF75345G3 55 Single 0.007 - - - 125 75 325 HUFA75345G3 55 Single 0.007 - - - 125


    Original     		PDF O-247 O-247 HUF75345G3 HUFA75345G3 HUF75344G3 HUFA75344G3 HUF75343G3 HUFA75343G3 HUF75339G3 HUFA75339G3 Irfp250 irfp460 FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    IRF9540 application

    Abstract: IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830
    Text: N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON) (A) RDS(ON)(Ω) Operating Temperature: -55 o C to 150oC Drain-Source Min. On-State Part No. Brkdwn. Voltg. DS Current 40.00


    Original     		PDF 150oC SSH20N50 SSH60N10 SSH15N60 SSH6N60 IRFP250 IRFP150 SSH40N20 IRFP254 SSH25N40 IRF9540 application IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: PD-20376A HFA40HF120 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 3.1V Qrr = 510nC di rec M/dt = 350A/µs Description


    Original     		PDF PD-20376A HFA40HF120 510nC

    IRFP250

    Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
    Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP250/251 FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFP250/251 IRFP250 IRFP251

    irfp250m

    Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
    Text: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE


    OCR Scan     		PDF IRFP250 O-247 T0-220 O-218 50Ktl irfp250m IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


    OCR Scan     		PDF IRFP250 O-247

    IRFP250 m

    Abstract: AX-3019 IRFP250 ax3019 Q2102 International Rectifier PD-9.443D
    Text: International Iran Rectifier 4ûS5H Sa G 0 1 5 itfl4 •IN R QSS PD-9.443D IRFP250 IN T E R N A T IO N A L HEXFET P o w e r M O S F E T R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRFP250 IRFP250 m AX-3019 IRFP250 ax3019 Q2102 International Rectifier PD-9.443D

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Text: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan     		PDF IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET

    IRFP250

    Abstract: d881 transistor IRFP250 D88FN2
    Text: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFP250 D88FN2 50VQLTS 0-08S 00A//US, IRFP251/D88FM2 IRFP250/D88FN2 d881 transistor IRFP250

    Irfp250 irfp460

    Abstract: RFP264 IRFP460 IR RFP260 IRFP064N IRFP054N RFP240 IRFp450
    Text: International Iö R Rectifier HEXFET Power MOSFETs •d ■o Continuous R0 Drain-to-Source ^DS on Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C (°C/W) Number


    OCR Scan     		PDF IRFP044N IRFP048N IRFP054N IRFP064N IRFP140N IRFP150N RFP240 IRFP250 RFP260 RFP244 Irfp250 irfp460 RFP264 IRFP460 IR RFP260 IRFp450

    1RFP240

    Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
    Text: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)


    OCR Scan     		PDF IRFP232 1RFP233 1RFP240 IRFP241 IRFP242 IRFP243 1RFP330 IRFP331 1RFP332 IRFP333 IRFP310 T03P irfp250 irfp320 IRFP323 n4001

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		PDF O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE

    irf250 dc motor

    Abstract: IRF250 ic data
    Text: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a


    OCR Scan     		PDF IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 irf250 dc motor IRF250 ic data