20nc50
Abstract: IRFP 450 irfp
Text: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
20nc50
IRFP 450
irfp
|
PDF
|
IRFP 450 application
Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
125OC
100ms
Figure10.
|
PDF
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
O-247
125OC
100ms
Figure10.
IRFP 640
IRFP P CHANNEL
IRFP P CHANNEL MOSFET
IRFP 460 datasheet
transistor irfp
irfp 460
IRFP
125OC
23/IRFP 460
|
PDF
|
IRFP
Abstract: No abstract text available
Text: IRFP 470 VDSS MegaMOSTMFET ID cont RDS(on) = 500 V = 24 A = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30
|
Original
|
O-247
IRFP
|
PDF
|
IRFP 640
Abstract: No abstract text available
Text: MegaMOSTMFET IRFP 470 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 24 A I DM TC = 25°C, pulse width limited by TJM
|
Original
|
O-247
IRFP 640
|
PDF
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP 450 application
Text: MegaMOSTMFET IRFP 470 VDSS = 500 V ID cont = 24 A RDS(on) = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30
|
Original
|
|
PDF
|
MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
|
Original
|
O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
|
PDF
|
IRFP 450 application
Abstract: IRFP340B
Text: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
|
Original
|
IRFP340B
IRFP 450 application
IRFP340B
|
PDF
|
IRFP 450 application
Abstract: IRFP340B
Text: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
|
Original
|
IRFP340B
IRFP 450 application
IRFP340B
|
PDF
|
IRFP 450 application
Abstract: transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp
Text: F Z 7 S G S -T H O M S O N *7Æ» IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI 500 500 450 450 500 500 450 450 V V V V V V V V ^DS<on
|
OCR Scan
|
450/FI-451/FI
452/FI-453/FI
IRFP450
IRFP450FI
IRFP451
IRFP451FI
IRFP452
IRFP452FI
IRFP453
IRFP453FI
IRFP 450 application
transistor irfp
IRFP 450
SCHEMATIC WITH IRFP 450
IRFP450F
irfp hi power
power switching with IRFP450 schematic
IRFP453FI
irfp
|
PDF
|
IRFP 450 application
Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Text: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5
|
OCR Scan
|
450/FI-451/FI
452/FI-453/FI
IRFP450
IRFP450FI
IRFP451
IRFP451FI
IRFP452
IRFP452FI
IRFP453
IRFP453FI
IRFP 450 application
IRFP P CHANNEL
switching with IRFP450 schematic
transistor irfp
tr irfp450
IRFP453FI
IRFP transistors
irfp 150
|
PDF
|
IRFP 640
Abstract: mosfet irfp 250 N
Text: IXYS Standard Power MOSFET IRFP 450 VDSS ID cont P DS(on) 500 V 14 A 0.40 f t N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 500 V vDGR ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V ^D25 Tc =25°C 14 A Tc = 25° C, pulse width limited by TJM
|
OCR Scan
|
Cto150
O-247
00A/ns,
pro45
IRFP 640
mosfet irfp 250 N
|
PDF
|
RFP450
Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
Text: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A
|
OCR Scan
|
FP450
IRFP450/FI
IRFP451/FI
450/FI
452/FI
453/FI
451/FI
RFP450
IRFP RE 40
IRFP 450
IRFP450FI
|
PDF
|
|
|
IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous
|
OCR Scan
|
IRFP460
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: inixYS MegaMOS FET IRFP 470 V DSS I D cont D DS(on) 500 V 24 A 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V OSS Tj =25°Cto150°C 500 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous ±20 V v GSM Transient
|
OCR Scan
|
Cto150
O-247AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
|
OCR Scan
|
IRFP450
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C
|
OCR Scan
|
IRFP470
13onditions
|
PDF
|
power supply CIRCUIT DIAGRAM irfp 460 a
Abstract: IRFP460 SWITCHING FREQUENCY IRFP460 equivalent SCHEMATIC WITH irfp460 IRFP equivalent
Text: J U-118 U IM IT R O D E APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. A B STR A C T Although touted as a high impedance, voltage controlled device,
|
OCR Scan
|
U-118
UC3705,
UC3706,
UC3707
UC3709
power supply CIRCUIT DIAGRAM irfp 460 a
IRFP460 SWITCHING FREQUENCY
IRFP460 equivalent
SCHEMATIC WITH irfp460
IRFP equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • 43D5571 0D5MS3S t.4T gì HARRIS ■ HAS IR FP450/451/452/453 IRFP450R/451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package TO -247 TOP VIEW • 12A and 14A, 450V - 500V • ro s o n = 0 .4 0 and 0 .5 fi
|
OCR Scan
|
43D5571
FP450/451/452/453
IRFP450R/451R
/452R
/453R
IRFP450,
IRFP451,
IRFP452,
IRFP453
IRFP450R,
|
PDF
|
FP450
Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
Text: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*
|
OCR Scan
|
FP450/45
FP450R
/451R
/452R
/453R
IRFP450,
IRFP451,
IRFP452,
IRFP453
IRFP450R,
FP450
451R
mosfet 4532
IRFP452
4532 MOSFET
|
PDF
|
RA30H4047M
Abstract: rf power amplifier circuit by 400-470mhz
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF PO W ER MODULE Revision date:30th/Nov.'01 ELETROSTATIC SENSITIVE DEVICES RA30H4047M Silicon MOS FET Pow er Amplifier, 400-470M Hz 30W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd Vgg Pin
|
OCR Scan
|
30th/Nov.
RA30H4047M
400-470MHz
25deg
50ohm
RA30H4047M
rf power amplifier circuit by 400-470mhz
|
PDF
|
1rfp450
Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Text: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE
|
OCR Scan
|
IRFP450/451/452/453
IRFP450R/451R/452R/453R
IRFP450,
IRFP451
IRFR452,
IRFP453
IRFP450R,
IRFP451R,
IRFP452R
IRFP453R
1rfp450
1rfp460
RFP450
IRFP450R
IRFP462
IRF450R
IRFP RE 40
IRFR452
MC 4528
IRFP450
|
PDF
|
