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Abstract: No abstract text available
Text: IRFM360D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55
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I348
Abstract: TMDB IRFM360 SS452 I-348
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM36Q ;n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e H E X F E T ® technology is the key to International Part N um ber
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IRFM360
IRFM360D
IRFM360U
O-254
MIL-S-19500
I348
TMDB
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SS452
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I-348
Abstract: i348 I 348
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I t t R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFM360
switc27
IRFM360D
IRFM360U
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MILS-19500
I-348
I-348
i348
I 348
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I-348
Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S
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IRFM360
IRFM360D
IRFM360U
O-254
MIL-S-19500
I-348
i348
TIR31
i346
IRFM360
IRFM360U
I*348
9712A
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