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    Untitled

    Abstract: No abstract text available
    Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8330PbF com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRFHM8330PbF AN-994 com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET Top View m 9.9 nC D 5 4 G D 6 3 S D 7 2 S D 8 1 S S S S G D D D 25 A D D PQFN 3.3X3.3 mm


    Original     		PDF IRFHM8330PbF AN-994 com/technical-info/appnotes/an-994