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IRFH5306TR2PBF Price and Stock

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Infineon Technologies AG IRFH5306TR2PBF MOSFET N-CH 30V 15A/44A PQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFH5306TR2PBF	Cut Tape			1	1 $1.54 10 $1.54 100 $1.54 1000 $1.54 10000 $1.54	Buy Now
	IRFH5306TR2PBF	Digi-Reel			1	1 $1.54 10 $1.54 100 $1.54 1000 $1.54 10000 $1.54	Buy Now
International Rectifier IRFH5306TR2PBF HEXFET POWER MOSFET Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRFH5306TR2PBF		2,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip-Germany GmbH	IRFH5306TR2PBF		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRFH5306TR2PBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFH5306TR2PBF		International Rectifier	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 15A 5X6 PQFN		Original	PDF

IRFH5306TR2PBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
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Untitled Abstract: No abstract text available Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC)	Original	IRFH5306PbF	PDF
Untitled Abstract: No abstract text available Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features	Original	IRFH5306PbF IRFH5306TRPBF IRFH5306TR2PBF	PDF
Untitled Abstract: No abstract text available Text: IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC)	Original	IRFH5306PbF IRFH5306TRPBF IRFH5306TR2PBF	PDF
Untitled Abstract: No abstract text available Text: IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC)	Original	IRFH5306PbF IRFH5306TRPBF IRFH5306TR2PBF	PDF
IRFH5306TR2PBF Abstract: IRFH5306PBF IRFH5306TRPBF IRFH5306 AN-1154 Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET VDS 30 V 8.1 mΩ nC RG typical 7.8 1.4 ID 44 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features	Original	IRFH5306PbF IRFH5306TRPBF IRFH5306TR2PBF IRFH5306TR2PBF IRFH5306PBF IRFH5306TRPBF IRFH5306 AN-1154	PDF