Untitled
Abstract: No abstract text available
Text: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters
|
Original
|
PDF
|
IRFH5302PbF
103mH,
|
Untitled
Abstract: No abstract text available
Text: IRFH5302PbF HEXFET Power MOSFET VDS 30 V 2.1 mΩ Qg typical 29 nC RG (typical) 1.6 Ω RDS(on) max (@VGS = 10V) ID (@Tc(Bottom) = 25°C) h 100 A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters
|
Original
|
PDF
|
IRFH5302PbF
|
IRf 48 MOSFET
Abstract: IRFH5302TRPBF IRFH5302TR2PBF PQFN footprint AN-1154 IRFH5302TR
Text: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters
|
Original
|
PDF
|
IRFH5302PbF
IRFH5302TRPBF
IRFH5302TRdard
103mH,
IRf 48 MOSFET
IRFH5302TRPBF
IRFH5302TR2PBF
PQFN footprint
AN-1154
IRFH5302TR
|
DIODE 50A 24V
Abstract: No abstract text available
Text: IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
|
Original
|
PDF
|
IRFH5302PbF
IRFH5302DTRPBF
IRFH5302DTR2PBF
DIODE 50A 24V
|