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    Infineon Technologies AG IRFC3810B

    MOSFET 100V 170A DIE
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    IRFC3810B

    Abstract: IRFC3810
    Text: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original     		95826B IRFC3810B O-274 100nA IRFC3810B IRFC3810 PDF

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    Abstract: No abstract text available
    Text: PD - 95826 IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original     		IRFC3810B O-274 100nA PDF