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    IRFBC40 TRANSISTOR Search Results

    IRFBC40 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRFBC40 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFBc40

    Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
    Text: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFBC40, IRFBC42 IRFBc40 transistor irfbc40 4A,600V IRFBC42 TB334 TA17426

    IRFBC40 Transistor

    Abstract: transistor irfbc40 irfbc40
    Text: IRFBC40 Data Sheet Title FB 0 bt 2A, 0V, 00 m, July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFBC40 IRFBC40 Transistor transistor irfbc40 irfbc40

    600V 2A MOSFET N-channel

    Abstract: transistor irfbc40 IRFBC40 irfbc40 free download TB334
    Text: IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFBC40 600V 2A MOSFET N-channel transistor irfbc40 IRFBC40 irfbc40 free download TB334

    Simple test MOSFET Procedures

    Abstract: IRFBC40 TB334
    Text: IRFBC40 Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFBC40 Simple test MOSFET Procedures IRFBC40 TB334

    irfbc40

    Abstract: No abstract text available
    Text: IRFBC40, IRFBC42 S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFBC40, IRFBC42 TA17426. 600VSS IRFBC42 irfbc40

    IR2110 application note

    Abstract: IR2110 IR2110E6 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2110 design
    Text: PD - 60065A IR2110E6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		PDF 0065A IR2110E6 IR2110E6 IR2110 application note IR2110 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2110 design

    IR2112

    Abstract: No abstract text available
    Text: Data Sheet No. PD60026I IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V · Undervoltage lockout for both channels


    Original     		PDF PD60026I IR2112 IR2112

    IR2110-2

    Abstract: IR2110 application note AN IR2110 IR2110 design IR2110 IR2110 IGBT DRIVER ir2110 circuit IR2110 gate driver for mosfet B-26 B-28
    Text: Data Sheet No. PD-6.011E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		PDF IR2110 IR2110 IRFPE50) IR2110S IRFBC20) IR2110-2 IR2110 application note AN IR2110 IR2110 design IR2110 IGBT DRIVER ir2110 circuit IR2110 gate driver for mosfet B-26 B-28

    IR2213

    Abstract: IR2213S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2213 DIE
    Text: Back Preliminary Data Sheet No. PD60030I IR2213 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 12 to 20V


    Original     		PDF PD60030I IR2213 IR2213 IR2213S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2213 DIE

    IR2113 APPLICATION NOTE

    Abstract: circuit to ir2113 IR2113 IR2113 APPLICATION IR2113-1 IR2113-2 IR2113S MP150 AN IR2113S IGBT Designers Manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		PDF IR2113 IR2113S IRFBC30) IRFBC20) IR2113 APPLICATION NOTE circuit to ir2113 IR2113 IR2113 APPLICATION IR2113-1 IR2113-2 MP150 AN IR2113S IGBT Designers Manual

    IR2112 equivalent

    Abstract: IR2112-2 IR2112 IR2112 circuit IR2112S IR2112-1 MP150 high current igbt IGBT Designers Manual
    Text: Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		PDF IR2112 IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112-2 IR2112 circuit IR2112-1 MP150 high current igbt IGBT Designers Manual

    IR2110 application note

    Abstract: mosfet b38 IR2110 design ir2110 CONNECTION IR2110-2 IR2110 IGBT Designers Manual ir2110 circuit DIAGRAM B-26 B-28
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.011E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		PDF IR2110 IRFPE50) IR2110S IRFBC20) IR2110 application note mosfet b38 IR2110 design ir2110 CONNECTION IR2110-2 IR2110 IGBT Designers Manual ir2110 circuit DIAGRAM B-26 B-28

    IR2112 equivalent

    Abstract: IR2112 IR2112-1 IR2112-2 IR2112S MP150 IGBT Designers Manual IR2112 circuit B52 transistor
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		PDF IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112 IR2112-1 IR2112-2 MP150 IGBT Designers Manual IR2112 circuit B52 transistor

    IR2112 equivalent

    Abstract: IR2112 IR2112-2 IR2112-1 IR2112S IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40
    Text: Data Sheet No. PD-6.026-G IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF 026-G IR2112 IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112-2 IR2112-1 IRFBC20 IRFBC30 IRFBC40 MP150 transistor irfbc40

    irfbc40

    Abstract: No abstract text available
    Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary


    OCR Scan     		PDF IRFBC40 O-220AB C-405 IRFBC40, IRFBC42 C-406 irfbc40

    irfbc40

    Abstract: No abstract text available
    Text: IRFBC40, IRFBC42 fÇ j HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFBC40, IRFBC42 TA17426. irfbc40

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, IRFBC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFBC40, IRFBC42 RFBC40,

    IR2112

    Abstract: 5TO20V
    Text: International 1@I]Rectifier Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2112 IR2112 IRFPE50) IR2112S IRFBC20) IRFBC30) IRFBC40) 5TO20V

    ss 3977

    Abstract: 600v plating phase rectifier diagram IRFBC40R ic ir2113
    Text: International 1@I]Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2113 IR2113 IRFPE50) IR2113S IRFBC20) IRFBC30) IRFBC40) ss 3977 600v plating phase rectifier diagram IRFBC40R ic ir2113

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEflICOND SECTOR bflE D • 430B271 Q0S10A5 T21 ■ £15 H A R R IS W PCFC40W 4QIP S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni


    OCR Scan     		PDF 430B271 Q0S10A5 PCFC40W MII-Std-750, IRFBC40 IRFPC40 IRFAC40 PCFC40D 1-800-4-HARRIS

    ir2110 circuit DIAGRAM

    Abstract: No abstract text available
    Text: International IQ R Rectifier DataSheelNo-PD-6011E IR 2 1 1 0 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2110STj IRFBC20) IR2110S IRFBC30> IRFBC40) tR2110STj IRFPE50i ir2110 circuit DIAGRAM

    high frequency plating rectifier using IGBT

    Abstract: No abstract text available
    Text: Data Sheet No. PD -6.026C International IGR Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V V o ffs e t 600V max. Tolerant to negative transient voltage dV/dt immune


    OCR Scan     		PDF IR2112 IR2112 IR2112S IRFBC20) IR2112STj IRFBC30) IRFBC40) IRFPE50) high frequency plating rectifier using IGBT

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier Data Sheet No. P D -6.01 1E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2110 SS45E 00E7SL7 IR2110S IRFBC20) IR2110STj IRFBC40) IRFBC30)

    IRFBC30I

    Abstract: circuit to ir2113
    Text: International IQ R Rectifier Data Sheet No. P D -6.030C IR2113 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2113 IR2113STj IRFBC20) IRFBC30I IRFBC40) IR2113S IRFPE50) circuit to ir2113