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    IRF9Z34N Price and Stock

    Infineon Technologies AG IRF9Z34NPBF

    MOSFET P-CH 55V 19A TO220AB
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    Infineon Technologies AG IRF9Z34NSTRLPBF

    MOSFET P-CH 55V 19A D2PAK
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    DigiKey IRF9Z34NSTRLPBF Cut Tape 6,200 1
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    UMW IRF9Z34N

    MOSFET P-CH 55V 19A TO220AB
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    DigiKey IRF9Z34N Tube 1
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    Infineon Technologies AG IRF9Z34NL

    MOSFET P-CH 55V 19A TO262
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    Infineon Technologies AG AUIRF9Z34N

    MOSFET P-CH 55V 19A TO220AB
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    IRF9Z34N Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9Z34N International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z34N with Standard Packaging Original PDF
    IRF9Z34N International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) Original PDF
    IRF9Z34N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z34N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -60V, -18A, Pkg Style TO-220AB Scan PDF
    IRF9Z34NL International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF9Z34NL with Standard Packaging Original PDF
    IRF9Z34NL International Rectifier HEXFET Power Mosfet Original PDF
    IRF9Z34NLPBF International Rectifier Original PDF
    IRF9Z34NLPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9Z34NL with Lead Free Packaging Original PDF
    IRF9Z34NPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF9Z34NPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF9Z34N with Lead-Free Packaging. Original PDF
    IRF9Z34NS International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Standard Packaging Original PDF
    IRF9Z34NS International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) Original PDF
    IRF9Z34NSPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z34NS with Lead Free Packaging Original PDF
    IRF9Z34NSPBF International Rectifier Original PDF
    IRF9Z34NSTRL International Rectifier P-channel power MOSFET for fast switching, 55V, 19A Original PDF
    IRF9Z34NSTRL International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Tape and Reel Left Packaging Original PDF
    IRF9Z34NSTRLPBF International Rectifier Original PDF
    IRF9Z34NSTRLPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z34NSTRL with Lead Free Packaging Original PDF
    IRF9Z34NSTRR International Rectifier P-channel power MOSFET for fast switching, 55V, 19A Original PDF
    IRF9Z34NSTRR International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Tape and Reel Right Packaging Original PDF

    IRF9Z34N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking F53

    Abstract: IRF9Z34NL IRF9Z34NS
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


    Original     		PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) marking F53 IRF9Z34NL IRF9Z34NS

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10" G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB. O-220AB

    irf 418

    Abstract: IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free 1 IRF9Z34NS/LPbF 2 IRF9Z34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"


    Original     		PDF IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF F530S EIA-418. irf 418 IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N

    IRL3103L

    Abstract: No abstract text available
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF


    Original     		PDF IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF EIA-418. IRL3103L

    IRF9Z34N

    Abstract: No abstract text available
    Text: PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1485B IRF9Z34N O-220 IRF9Z34N

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


    Original     		PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) capabl245,

    IRL3103L

    Abstract: IRF9Z34NS
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF


    Original     		PDF IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF EIA-418. IRL3103L IRF9Z34NS

    IRF9Z34NL

    Abstract: IRF9Z34NS marking F53
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


    Original     		PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) IRF9Z34NL IRF9Z34NS marking F53

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34NS/L l l l l l l l TO-263 TO-262 Advanced Process Technology Surface Mount IRF9Z34NS Low-profile through-hole (IRF9Z34NL) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of


    Original     		PDF IRF9Z34NS/L O-263 O-262 IRF9Z34NS) IRF9Z34NL)

    irf 9246

    Abstract: IRF9Z34N
    Text: IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 1 .3 2 (. 0 5 2 )


    Original     		PDF IRF9Z34N O-220AB irf 9246 IRF9Z34N

    IRF9Z34N

    Abstract: IRF9Z34
    Text: PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1485B IRF9Z34N O-220 IRF9Z34N IRF9Z34

    IRF9Z34N

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.2001 IRF9Z34N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.10Ω


    Original     		PDF IRF9Z34N O-220 IRF9Z34N

    irf9z34n

    Abstract: No abstract text available
    Text: PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1485B IRF9Z34N O-220 app245, irf9z34n

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB. O-220AB

    IRF9Z34NPBF

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF9Z34NPbF O-220 O-220AB IRF9Z34NPBF

    1530A

    Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		PDF IRFI9Z34N O-220 1530A f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44

    12v 100w amplifier

    Abstract: 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent J2 Q24A B 100w bass circuit 12v 100W regulator IRF9Z34N 100W AUDIO AMPLIFIER 100w mosfet audio amplifier circuit diagram
    Text: ASAHI KASEI [AKD4730-100W] AKD4730-100W AK4730-100W Evaluation Board Rev.4 GENERAL DESCRIPTION The AKD4730-100W is the evaluation board of AK4730, which is one chip modulator built in two channel PWM Modulators and Pre-Drivers of MOSFETs for Class-D Amplifier. It has the interface of the


    Original     		PDF AKD4730-100W] AKD4730-100W AK4730-100W AKD4730-100W AK4730, AKD4730 2200u 12v 100w amplifier 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent J2 Q24A B 100w bass circuit 12v 100W regulator IRF9Z34N 100W AUDIO AMPLIFIER 100w mosfet audio amplifier circuit diagram

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    1RF9Z34N

    Abstract: IRF9Z34N 1RF9Z34 RF1010
    Text: PD - 9.1485A International IG R Rectifier IRF9Z34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Plating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55V ^ D S o n = 0 . 1 0 Q


    OCR Scan     		PDF IRF9Z34N 1RF9Z34N IRF9Z34N 1RF9Z34 RF1010

    irf9z34n

    Abstract: No abstract text available
    Text: PD - 9.1485B International TOR Rectifier IRF9Z34N HEXFET Power M OSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = -55V RDS on = 0 .1 0 ft


    OCR Scan     		PDF O-220 irf9z34n

    IRF9Z34N

    Abstract: 1682V
    Text: PD - 9.1485B International IG R Rectifier IRF9Z34N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fuily Avalanche Rated V dss = -5 5 V f^ D S o n = 0 . 1 0 Í 2


    OCR Scan     		PDF 1485B IRF9Z34N IRF9Z34N 1682V

    RF9Z34N

    Abstract: No abstract text available
    Text: P D - 9.1525 International I Q R Rectifier IRF9Z34NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34NS • Low-profile through-hole (I RF9Z34NL) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


    OCR Scan     		PDF IRF9Z34NS) RF9Z34NL) RF9Z34N

    IRF9Z34N

    Abstract: No abstract text available
    Text: International I R Rectifier • • • • • • PD - 9.1485A IRF9Z34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -55V 0.10Q |D = -17A


    OCR Scan     		PDF IRF9Z34N O-220 IRF9Z34N