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    IRF9Z24N P-CHANNEL POWER Search Results

    IRF9Z24N P-CHANNEL POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    IRF9Z24N P-CHANNEL POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRf 48 MOSFET

    Abstract: IRF9Z24N
    Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    1484B IRF9Z24N O-220 IRf 48 MOSFET IRF9Z24N PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    1484B IRF9Z24N O-220 appli245, PDF

    IRF9Z24N

    Abstract: P-Channel irf IRf 48 MOSFET
    Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    1484B IRF9Z24N O-220 IRF9Z24N P-Channel irf IRf 48 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


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    IRF9Z24N O-220AB O-220 O-220 PDF

    IRf 48 MOSFET

    Abstract: IRF9Z24N
    Text: PD -9.1484A IRF9Z24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    IRF9Z24N O-220 IRf 48 MOSFET IRF9Z24N PDF

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax


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    AUIRFR9024N AUIRFU9024N PDF

    U5505

    Abstract: AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505
    Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    AUIRFR5505 AUIRFU5505 U5505 AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    AUIRFR5505 AUIRFU5505 PDF

    u9024n

    Abstract: AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902
    Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax


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    AUIRFR9024N AUIRFU9024N u9024n AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902 PDF

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


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    O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =


    OCR Scan
    IRF9Z24N PDF

    f9z24

    Abstract: No abstract text available
    Text: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A


    OCR Scan
    IRF9Z24N O-220 C-278 C-279 f9z24 PDF

    F1010

    Abstract: IRF9Z24N 2D 1002 diode IRf9z24n P-channel power
    Text: PD -9.1484A International IGR Rectifier IRF9Z24N PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q s s = -55 V


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    IRF9Z24N F1010 IRF9Z24N 2D 1002 diode IRf9z24n P-channel power PDF