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    IRF9Z Search Results

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    IRF9Z Price and Stock

    Vishay Siliconix IRF9Z30PBF-BE3

    MOSFET P-CH 50V 18A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z30PBF-BE3 Tube 8,011 1
    • 1 $2.67
    • 10 $2.67
    • 100 $2.67
    • 1000 $1.05724
    • 10000 $1.05724
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    Vishay Siliconix IRF9Z24SPBF

    MOSFET P-CH 60V 11A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z24SPBF Tube 3,329 1
    • 1 $2.19
    • 10 $2.19
    • 100 $2.19
    • 1000 $0.80688
    • 10000 $0.80688
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    ComSIT USA IRF9Z24SPBF 600
    • 1 -
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    New Advantage Corporation IRF9Z24SPBF 1,950 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.19
    • 10000 $1.11
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    Vishay Siliconix IRF9Z34STRLPBF

    MOSFET P-CH 60V 18A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z34STRLPBF Digi-Reel 2,382 1
    • 1 $2.73
    • 10 $1.766
    • 100 $2.73
    • 1000 $2.73
    • 10000 $2.73
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    IRF9Z34STRLPBF Cut Tape 2,382 1
    • 1 $2.73
    • 10 $1.766
    • 100 $2.73
    • 1000 $2.73
    • 10000 $2.73
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    IRF9Z34STRLPBF Reel 1,600 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.92496
    • 10000 $0.80688
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    New Advantage Corporation IRF9Z34STRLPBF 4,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.8643
    • 10000 $0.8067
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    Vishay Siliconix IRF9Z14PBF-BE3

    MOSFET P-CH 60V 6.7A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z14PBF-BE3 Tube 1,353 1
    • 1 $1.74
    • 10 $1.74
    • 100 $1.74
    • 1000 $0.53485
    • 10000 $0.43368
    Buy Now

    UMW IRF9Z24N

    MOSFET P-CH 55V 12A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z24N Tube 1,000 1
    • 1 $0.77
    • 10 $0.516
    • 100 $0.77
    • 1000 $0.25578
    • 10000 $0.2
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    IRF9Z Datasheets (196)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9Z10 International Rectifier HEXFET Power MOSFET Original PDF
    IRF9Z10 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original PDF
    IRF9Z10 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9Z10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9Z10 Unknown FET Data Book Scan PDF
    IRF9Z10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9Z10PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original PDF
    IRF9Z10PBF-BE3 Vishay Siliconix MOSFET P-CH 60V 6.7A TO220AB Original PDF
    IRF9Z10S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z10STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z10STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z12 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9Z12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9Z12 Unknown FET Data Book Scan PDF
    IRF9Z12 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9Z14 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z14 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-220AB Original PDF
    IRF9Z14 International Rectifier Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) Scan PDF
    IRF9Z14 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    ...

    IRF9Z Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9Z34

    Abstract: IRF9Z34PBF
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9Z34 IRF9Z34PBF PDF

    IRF9Z24L

    Abstract: IRF9Z24S SiHF9Z24S
    Text: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)


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    IRF9Z24S, SiHF9Z24S IRF9Z24L, SiHF9Z24L 2002/95/EC 11-Mar-11 IRF9Z24L IRF9Z24S PDF

    IRF9Z20

    Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


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    IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 11-Mar-11 IRF9Z20 IRF9Z22 SiHF9Z20-E3 PDF

    IRF9Z34

    Abstract: SiHF9Z34 SiHF9Z34-E3
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRF9Z34 SiHF9Z34-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    AN609

    Abstract: IRF9Z34 SiHF9Z34
    Text: IRF9Z34_RC, SiHF9Z34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRF9Z34 SiHF9Z34 AN609, 29-Mar-10 AN609 PDF

    IRF9Z10

    Abstract: DIODE NU
    Text: PD - 90459A IRF9Z10 D G D S TO-220AB www.irf.com G D S Gate Drain Source 1 06/24/05 IRF9Z10 2 www.irf.com IRF9Z10 www.irf.com 3 IRF9Z10 4 www.irf.com IRF9Z10 www.irf.com 5 IRF9Z10 6 www.irf.com IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


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    0459A IRF9Z10 O-220AB O-220AB IRF9Z10 DIODE NU PDF

    f1010

    Abstract: No abstract text available
    Text: PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088


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    IRF9Z14PbF 12-Mar-07 f1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95415 IRF9Z24PbF • Lead-Free Document Number: 91090 06/14/04 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090


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    IRF9Z24PbF O-220AB 15ability, PDF

    IRF9Z24NLPBF

    Abstract: IRL3103L IRF9Z24NS
    Text: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF


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    IRF9Z24NSPbF IRF9Z24NLPBF IRF9Z24NS/LPbF EIA-418. IRF9Z24NLPBF IRL3103L IRF9Z24NS PDF

    ir9z24

    Abstract: IRF9Z24L IRF9Z24S SiHF9Z24S SiHF9Z24S-E3
    Text: IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S I2PAK (TO-262) Available


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    IRF9Z24S, IRF9Z24L, SiHF9Z24S SiHF9Z24L O-262) O-263) 18-Jul-08 ir9z24 IRF9Z24L IRF9Z24S SiHF9Z24S-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF

    marking F53

    Abstract: IRF9Z34NL IRF9Z34NS
    Text: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


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    IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) marking F53 IRF9Z34NL IRF9Z34NS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10" G ID = -19A S Fifth Generation HEXFETs from International Rectifier


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    IRF9Z34NPbF O-220 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


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    IRF9Z34NPbF O-220 O-220AB. O-220AB PDF

    irf 418

    Abstract: IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N
    Text: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free 1 IRF9Z34NS/LPbF 2 IRF9Z34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"


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    IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF F530S EIA-418. irf 418 IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N PDF

    IRF9Z14PBF

    Abstract: No abstract text available
    Text: PD - 95628 IRF9Z14PbF • Lead-Free 1 IRF9Z14PbF 2 IRF9Z14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


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    IRF9Z14PbF O-220AB O-220AB. IRF9Z14PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


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    IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    pj 67 diode

    Abstract: PJ 63 MM diode IRF9Z14 SAJ 220
    Text: PD-9.736 International S Rectifier IRF9Z14 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "60 V ^DS on = 0 -5 0 Q


    OCR Scan
    IRF9Z14 O-220 -60Ve pj 67 diode PJ 63 MM diode IRF9Z14 SAJ 220 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated


    OCR Scan
    IRF9Z24NS) IRF9Z24NL) PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated


    OCR Scan
    IRF9Z24NS/L IRF9Z24NS) IRF9Z24NL) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    IRF9Z14/Z15 IRF9Z10/Z12 O-220 IRF9Z10 7Tb4142 00122C PDF

    Untitled

    Abstract: No abstract text available
    Text: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching


    OCR Scan
    0D14R14 IRF9Z14 O-220 55M52 PDF