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    International Rectifier IRF7379QPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    IRF7379QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF7379QPBF International Rectifier HEXFET Power MOSFET Original PDF

    IRF7379QPBF Datasheets Context Search

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    Transistor Mosfet N-Ch 30V

    Abstract: No abstract text available
    Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '


    Original     		PDF 6111A IRF7379QPbF EIA-481 EIA-541. Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7379QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original     		PDF 96111B IRF7379QPbF EIA-481 EIA-541.

    irf MOSFET p-CH

    Abstract: No abstract text available
    Text: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original     		PDF 96111B IRF7379QPbF thi61 EIA-481 EIA-541. irf MOSFET p-CH