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    International Rectifier IRF7341QPBF

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    IRF7341QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7341QPBF International Rectifier HEXFET Power MOSFET Original PDF

    IRF7341QPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    51A SO8

    Abstract: No abstract text available
    Text: IRF7341QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    IRF7341QPbF EIA-481 EIA-541. 51A SO8 PDF

    tav 541

    Abstract: AN-1005 IRF7341QPBF 4.5V TO 100V INPUT REGULATOR
    Text: PD - 96108 IRF7341QPbF HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • • • • • • • VDSS RDS(on) max ID 55V 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A Advanced Process Technology


    Original
    IRF7341QPbF EIA-481 EIA-541. tav 541 AN-1005 IRF7341QPBF 4.5V TO 100V INPUT REGULATOR PDF