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    IRF3203 MOSFET Search Results

    IRF3203 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF3203 MOSFET Datasheets Context Search

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    irf3203

    Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
    Text: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area


    OCR Scan     		PDF IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 IRF720/IRFP320/IRF320 IRF721 /IRFP321 /IRF321 IRF/22/IH FP322/IRF322 IRF723/IRFP323/IRF323 irf3203 irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722