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    IRF25 Price and Stock

    Infineon Technologies AG IRF250P224

    MOSFET N-CH 250V 96A TO247AC
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    DigiKey IRF250P224 Tube 400 1
    • 1 $9.59
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    • 1000 $4.53462
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    Avnet Americas IRF250P224 Bulk 1
    • 1 $10.37
    • 10 $10.04
    • 100 $5.96
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    IRF250P224 Tube 400
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    Mouser Electronics IRF250P224 550
    • 1 $9.51
    • 10 $9.05
    • 100 $4.91
    • 1000 $4.53
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    Newark IRF250P224 Bulk 5,746 1
    • 1 $4.01
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    Chip One Stop IRF250P224 Tube 3,308
    • 1 $8
    • 10 $7.73
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    EBV Elektronik IRF250P224 17 Weeks 400
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    Win Source Electronics IRF250P224 1,401
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    • 10 $5.1615
    • 100 $3.441
    • 1000 $3.441
    • 10000 $3.441
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    Infineon Technologies AG IRF250P225

    MOSFET N-CH 250V 69A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF250P225 Tube 152 1
    • 1 $7.68
    • 10 $7.68
    • 100 $7.68
    • 1000 $3.37988
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    Avnet Americas IRF250P225 Tube 400
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    • 1000 $3.27172
    • 10000 $3.1906
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    Mouser Electronics IRF250P225 691
    • 1 $6.59
    • 10 $6.49
    • 100 $3.44
    • 1000 $3.38
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    Newark IRF250P225 Bulk 460 1
    • 1 $7.52
    • 10 $7.42
    • 100 $4.28
    • 1000 $4.18
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    TME IRF250P225 25 1
    • 1 $5.91
    • 10 $4.65
    • 100 $4.1
    • 1000 $4.1
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    Chip One Stop IRF250P225 Tube 800
    • 1 $6.06
    • 10 $5.97
    • 100 $3.31
    • 1000 $3.29
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    EBV Elektronik IRF250P225 17 Weeks 400
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    New Jersey Semiconductor Products, Inc. IRF250

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF250 4,672 1
    • 1 $21.48
    • 10 $21.48
    • 100 $19.0012
    • 1000 $17.6136
    • 10000 $17.6136
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    New Jersey Semiconductor Products, Inc. IRF251

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF251 4,231 1
    • 1 $21.48
    • 10 $21.48
    • 100 $19.0012
    • 1000 $17.6136
    • 10000 $17.6136
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    Motorola Semiconductor Products IRF250

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    Bristol Electronics IRF250 2
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    Find more IRF25 price and stock on Findchips.com

    IRF25 Datasheets (128)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF250 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF250 International Rectifier HEXFET Transistor Original PDF
    IRF250 Intersil 30A, 200V, 0.085 ?, N-Channel Power MOSFET Original PDF
    IRF250 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF
    IRF250 Semelab N-Channel Power MOSFET Original PDF
    IRF250 FCI POWER MOSFETs Scan PDF
    IRF250 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF250 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF250 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. Scan PDF
    IRF250 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF250 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF250 IXYS High Voltage Power MOSFETs Scan PDF
    IRF250 IXYS High Voltage Power MOSFETs Scan PDF
    IRF250 Motorola Switchmode Datasheet Scan PDF
    IRF250 Motorola European Master Selection Guide 1986 Scan PDF
    IRF250 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF250 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF250 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    IRF25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF250

    Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] an52-7105 IRF250 irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247 PDF

    AVALANCHE TRANSISTOR

    Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
    Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRF250 O-204AE TB334 TA09295. AVALANCHE TRANSISTOR transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR PDF

    IRF250SMD

    Abstract: IRF250S
    Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		IRF250SMD 00A/ms 300ms, IRF250SMD IRF250S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF252R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


    Original     		IRF252R PDF

    IRF254

    Abstract: No abstract text available
    Text: IRF254 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100 IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


    Original     		IRF254 PDF

    IRF250

    Abstract: mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		IRF250 state3500 300ms, IRF250 mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		IRF250 300ms, PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF251 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


    Original     		IRF251 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] p252-7105 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF256 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100 IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


    Original     		IRF256 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55


    Original     		IRF250 PDF

    1RF250

    Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
    Text: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low


    OCR Scan     		IRF250 IRF251 IRF252 IRF253 IRF250, IRF252, IRF253 1RF250 IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD PDF

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Text: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan     		IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET PDF

    IRF250SM

    Abstract: No abstract text available
    Text: im if Pi im SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V DSS 0.25 14A I D(cont) 3.0 0.100Û ^D S (on) FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		IRF250SM O-220SM 00A/ns 300ms, IRF250SM PDF

    IRF254

    Abstract: No abstract text available
    Text: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d


    OCR Scan     		Figure16. IRF254 PDF

    Untitled

    Abstract: No abstract text available
    Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF250, IRF251, IRF252, IRF253 RF251, PDF

    IRF250

    Abstract: IRF250 motorola IRF250 power MOSFET MOSFET IRF250 IRF250.253
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Pow er FETs are desig n ed fo r lo w vo lta g e , h ig h speed p o w e r s w itc h in g a pp licatio n s


    OCR Scan     		IRF250 IRF251 IRF252 IRF253 IRF251. IRF250 motorola IRF250 power MOSFET MOSFET IRF250 IRF250.253 PDF

    IRF250

    Abstract: transistor irf250 IRF252 IRF250 power MOSFET IRF251 Application of irf250 irfz52 IRF253 1RF252 he250
    Text: •Standard Power MOSFETs File N u m b e r 1825 IRF250, IRF251, IRF252, IRF253 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 25 A and 30 A, 150 V - 200 V rDs on = 0.085 fi and 0.120 fi


    OCR Scan     		IRF250, IRF251, IRF252, IRF253 92CS-3374I IRF252 IRF2I53 IRF250 transistor irf250 IRF250 power MOSFET IRF251 Application of irf250 irfz52 IRF253 1RF252 he250 PDF

    IRF253

    Abstract: IRF252
    Text: IRF252,253 MÛT 25 AMPERES 200,150 VOLTS RDS(ON = 0.12 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		IRF252 100ms -IRF25C IRF252 IRF253 PDF

    IRF250

    Abstract: IRF252
    Text: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET


    OCR Scan     		SS45S T-39-13 IRF250 IRF251 IRF252 IRF253 O-204AE IRF250, IRF251, IRF252, PDF

    IRF250

    Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
    Text: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		IRF250/251/252/253 IRF250 IRF251 IRF252 IRF253 MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" PDF

    IRF250

    Abstract: F25-3
    Text: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		IRF250/251 IRF251 200V150V 00GS435 F--13 IRF250 F25-3 PDF

    irf250n

    Abstract: IRF250 ic data
    Text: SGS-THOMSON IRF250 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 2 5 0 V dss 200 V Id R d S o ii 0 .0 8 5 n 30 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING


    OCR Scan     		IRF250 irf250n IRF250 ic data PDF

    TO-204AE

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600


    OCR Scan     		IRFP441 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 2N6763 2N6764 IRF150 TO-204AE PDF