Irf1404
Abstract: No abstract text available
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A
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PD-91896F
IRF1404
IRF1010
O-220AB
Irf1404
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IRF1404
Abstract: No abstract text available
Text: IRF1404 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
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IRF1404
O-220AB
O-220
O-220
O-220AB
IRF1404
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IRF1404
Abstract: Gate Driver of IRF1404 PD-91896F Gate Driver for IRF1404 tr irf1404 irf1404 to220ab ir
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A
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Original
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PD-91896F
IRF1404
IRF1010
O-220AB
IRF1404
Gate Driver of IRF1404
PD-91896F
Gate Driver for IRF1404
tr irf1404
irf1404 to220ab ir
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Gate Driver of IRF1404
Abstract: IRF1404 PD-91896F
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A
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Original
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PD-91896F
IRF1404
IRF1010
O-220AB
Gate Driver of IRF1404
IRF1404
PD-91896F
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PDF
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IRF1404
Abstract: No abstract text available
Text: PD -91896E IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from
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-91896E
IRF1404
O-220
IRF1404
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Gate Driver of IRF1404
Abstract: Irf 1540 G MOSFET IRF 1540 Irf 1540 N IRF1404
Text: PD -91896C IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from
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Original
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-91896C
IRF1404
O-220
Gate Driver of IRF1404
Irf 1540 G
MOSFET IRF 1540
Irf 1540 N
IRF1404
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Gate Driver of IRF1404
Abstract: No abstract text available
Text: PD -91896A IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFETs from International
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Original
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-91896A
IRF1404
O-220
Gate Driver of IRF1404
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91896D IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from
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-91896D
IRF1404
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -TBD IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFETs from International
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IRF1404
O-220
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IRF1404
Abstract: No abstract text available
Text: PD -91896B IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from
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Original
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-91896B
IRF1404
O-220
IRF1404
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91896 IRF1404 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.004Ω G ID = 162A S Description Seventh Generation HEXFETs from International
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IRF1404
O-220
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IRF1010 E DATASHEET
Abstract: IRF1404 IRF1010 TO-220AB Package Package outline To220ab
Text: IRF1404 TO-220AB Package Outline Dimensions are shown in millimeters 10.54 .415 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045)
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IRF1404
O-220AB
IRF1010
IRF1010 E DATASHEET
IRF1404
IRF1010
TO-220AB Package
Package outline To220ab
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GA400GD25S
Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
Text: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply
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IR2108
IRFBA1404P
IRF1404S
IRF1404
IRF1404L
IRF1405S
IRF1405
IRF1405L
IRFP2907
IRFPS3810
GA400GD25S
ir2184 circuit
IR211X
IRG4BC30KD-S
IR2213 DIE
600V 20A 50KHz
IR2136
GA250
IRFP3415
IR2137
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PDF
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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