Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF1010NL Search Results

    SF Impression Pixel

    IRF1010NL Price and Stock

    Infineon Technologies AG IRF1010NL

    MOSFET N-CH 55V 85A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010NL Tube 50
    • 1 -
    • 10 -
    • 100 $3.176
    • 1000 $3.176
    • 10000 $3.176
    Buy Now

    Infineon Technologies AG IRF1010NLPBF

    MOSFET N-CH 55V 85A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010NLPBF Tube 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.07538
    • 10000 $1.07538
    Buy Now

    International Rectifier IRF1010NL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF1010NL 40
    • 1 $13.5
    • 10 $12
    • 100 $11.1
    • 1000 $11.1
    • 10000 $11.1
    Buy Now

    IRF1010NL Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF1010NL International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010NL with Standard Packaging Original PDF
    IRF1010NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010NL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010NL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010NLPBF International Rectifier Transistor Mosfet N-CH 55V 85A 3TO-262 Original PDF
    IRF1010NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010NL with Lead Free Packaging Original PDF

    IRF1010NL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original
    91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL PDF

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original
    91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint PDF

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


    Original
    IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!


    Original
    IRF1010NSPbF IRF1010NLPbF EIA-418. PDF

    marking 43a

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original
    IRF1010NS IRF1010NL marking 43a AN-994 IRF1010N IRF1010NL IRF1010NS PDF

    marking 43a

    Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original
    IRF1010NS IRF1010NL marking 43a IRF1010NL AN-994 IRF1010N IRF1010NS PDF

    DIODE S 43a

    Abstract: AN-994 IRF1010N
    Text: IRF1010NS/IRF1010NL Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original
    IRF1010NS/IRF1010NL DIODE S 43a AN-994 IRF1010N PDF

    marking code 43a

    Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original
    IRF1010NSPbF IRF1010NLPbF EIA-418. marking code 43a 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS IRF1010NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D 2 P ak T O -26 2 IRF1010NL IRF1010NS Description The D2Pak is a surface mount power package capable of


    Original
    IRF1010NS IRF1010NL IRF1010NL) PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from


    Original
    IRF1010NS IRF1010NL PDF

    AN-994

    Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original
    IRF1010NSPbF IRF1010NLPbF EIA-418. AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted PDF

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original
    O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    IRF1010E

    Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
    Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)


    Original
    IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606 PDF

    f101on

    Abstract: GS 069 LF
    Text: P D -9 1 3 7 2 B International KSR Rectifier IR F 1 0 1 0 N S /L H EXFET Pow er M O S F E T • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF1010NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    IRF1010NS) IRF1010NL) f101on GS 069 LF PDF

    DIODE S 43a

    Abstract: IRF1010N
    Text: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    IRF1010NS) IRF101ONL) IRF1010NS/L DIODE S 43a IRF1010N PDF