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    IRF P-CHANNEL FET Search Results

    IRF P-CHANNEL FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    IRF P-CHANNEL FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MD8415B

    Abstract: MD8415 MD8404 IRF 3250 MD8402 MD8405 0x0004 fujifilm
    Text: LINK IEEE 1394 MD8415B User's Manual Preliminary FUJIFILM MICRODEVICES CO., LTD Ver 0.93 MEMO Preliminary MD8415B History of Revisions Issue No. 0.8 0.9 0.91 0.92 0.93 Ver 0.93 Date 14 May 1999 02 July 1999 05 July 1999 05 July 1999 23 July 2000 Contents of Revision


    Original     		PDF MD8415B MD8415. MD8415B MD8415 MD8404 IRF 3250 MD8402 MD8405 0x0004 fujifilm

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    78C10AGQ

    Abstract: 78C12A uPD78C10A PD78C10A NEC JAPAN 78c10agq MKL series 78c12agq 78C11 uPD78C11A uPD78C12A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD78C10A A , 78C11A(A), 78C12A(A) 8-BIT SINGLE-CHIP MICROCOMPUTER (WITH A/D CONVERTER) DESCRIPTION The µPD78C11A(A) is a CMOS 8-bit microcomputer that features single-chip integration of a 16-bit ALU, ROM, RAM, an A/D converter, a multifunctional timer/event counter, and a universal serial interface, as well


    Original     		PDF PD78C10A 78C11A 78C12A PD78C11A 16-bit PD78C12A 78C10AGQ uPD78C10A NEC JAPAN 78c10agq MKL series 78c12agq 78C11 uPD78C11A uPD78C12A

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		PDF FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    78c10

    Abstract: PD78C10A NEC JAPAN 78c10agq 78C12A MKL series 78C11 87AD uPD78C10A uPD78C11A AN-307
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    IRF 3203

    Abstract: UPD7810 assembler nec 7810 application notes upd7810 nec 7810 nec uPD7811 uPD78C14 78C10 78C11 uPD78C14G-XXX-1B
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD78C14 8-BIT SINGLE-CHIP MICROCONTROLLER WITH A/D CONVERTER The µPD78C14 is a single-chip, CMOS 8-bit microcontroller in which a 16-bit ALU, a ROM, a RAM, an A/D converter, a multifunction timer/event counter, and a serial interface are all integrated. Moreover, a 48-Kbyte external expansion


    Original     		PDF PD78C14 PD78C14 16-bit 48-Kbyte PD78C18 IRF 3203 UPD7810 assembler nec 7810 application notes upd7810 nec 7810 nec uPD7811 uPD78C14 78C10 78C11 uPD78C14G-XXX-1B

    MKL series

    Abstract: IRF 950 15MHz0 uPD78C14 uPD78C14G uPD78C14GF uPD78C14L uPD78C18 87AD PD78C14G
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD78C14 A 8-BIT SINGLE-CHIP MICROCONTROLLER (WITH A/D CONVERTER) The µPD78C14(A) is a single-chip, CMOS 8-bit microcontroller in which a 16-bit ALU, a ROM, a RAM, an A/D converter, a multifunction timer/event counter, and a serial interface are all integrated. Moreover, a 48-Kbyte external expansion


    Original     		PDF PD78C14 16-bit 48-Kbyte PD78C18 MKL series IRF 950 15MHz0 uPD78C14 uPD78C14G uPD78C14GF uPD78C14L uPD78C18 87AD PD78C14G

    UPD7810 assembler

    Abstract: UPD7810 IRF 3203 78C10 uPD78C14 MKL series nec uPD7811 nec 7810 application notes 78C11 PA-78CP14
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    25V4045

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 25V4045 1 4 .0 — 14.5G H z BAND 0 .3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F ET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF 25V4045 13UfT1« 25V4045

    IRF P CHANNEL MOSFET

    Abstract: SD1575 P Channel Power MOSFET IRF
    Text: FUJI 2SK2806-01 e u s c u ija u ^ N-channel MOS-FET 30V 0,02& 35A 30W FAP-IIIB Series > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		PDF 2SK2806-01 IRF P CHANNEL MOSFET SD1575 P Channel Power MOSFET IRF

    IRF820

    Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF820 IRF821 IRF823 Gate-SourcF821, IRF823 IRF820 IRF820, P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET R 823 motorola IRF n CHANNEL MOSFET

    nec uPD7811

    Abstract: capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811
    Text: NEC ¿/PD78PG11 HIGH-END, 8-BIT, SINGLE-CHIP NMOS MICROCOMPUTER WITH PIGGYBACK EPROM NEC Electronics Inc. D e scrip tio n Pin C o n fig u ra tio n T h e N E C ¿/PD78PG11 is a prototyping device used to emulate the m asked-RO M /UPD7811. Th e user can insert a standard EP R O M 2732A or 2764 into the


    OCR Scan     		PDF uPD78PG11 /PD78PG11 /UPD7811. theyi/PD78PG11. the/uPD7811. 16-bit nec uPD7811 capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811

    D78C10

    Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
    Text: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip


    OCR Scan     		PDF 457S2S 0D133 uPD78C10 uPD78C11 uPD78C14 16-bit 256-byte D78C10 PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36

    Untitled

    Abstract: No abstract text available
    Text: 2SK962-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F-II S E R I E S I Features lOutline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V gss = ± 3 0 V Guarantee Avalanche-proof ¡Applications


    OCR Scan     		PDF 2SK962-01

    pd7810

    Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
    Text: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro ­ com puters integrate sophisticated on-chip peripheral


    OCR Scan     		PDF uPD7810 uPD7811 /PD7810 /PD7811 16-bit PD7810/11 256-byte pd7810 PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480

    c 2328a

    Abstract: 2SJ206 T500
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ206 2SJ206, c 2328a 2SJ206 T500

    2073S

    Abstract: Sony CXD
    Text: SONY CXD2073S Digital Comb Filter NTSC Description The CXD2073S is an adaptive comb filter compatible with NTSC system, and provide high-precision Y/C separation with a single chip. Features • Y/C separation by adaptive processing • Horizontal aperture compensation circuit


    OCR Scan     		PDF CXD2073S CXD2073S 2073S 30PIN SDIP-30P-01 SDIP030-P-0400 2073S Sony CXD

    TC-2328A

    Abstract: c 2328a 2SJ206 T500 2328A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device PACKAGE DIMENSIONS Unit: mm source. 4.5 ±0.1 1.6 + 0.2 which can be driven directly by the output of ICs having a 5 V power


    OCR Scan     		PDF 2SJ206 2SJ206, TC-2328A c 2328a 2SJ206 T500 2328A

    a2297

    Abstract: No abstract text available
    Text: 2SK1944-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET - F A P - I I A • Features S E R I E S Outline Drawings • High speed switching • l ow on-resistanoe • I Jo secondary breakdown • l ow driving power


    OCR Scan     		PDF 2SK1944-01 a2297

    d7810h

    Abstract: AR6F
    Text: AfPD7810H/11H 8-BIT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH A /D CONVERTER V |\IFP Flprtrnnir«? Inr D escription Pin C onfiguration _ The //PD7810H and //PD7811H single-chip m icro­ com puters integrate sophisticated on-chip peripheral fu n ctio n a lity norm ally provided by external com po­


    OCR Scan     		PDF AfPD7810H/11H //PD7810H //PD7811H 16-bit PD781 OH/11H 256-byte PD7810H/11H d7810h AR6F

    b 772 p

    Abstract: 2SK874 rjh ah TC-6301
    Text: M O S Field E ffe ct P o w e r T r a n s is to r 2SK874 N MOS FET X - f n m m 2SK874 i i , N > M 2 ''° > 7 - M O S F E T r-t>i&mn&<, •y - f- fl-M E x ^ y f > &>;, s;jsmx^ > R e tili, D C -D C 3 'y — : mm <p 3.2 + 0.2 l-w kifiT 'i'o 9 T O 4.7 MAX. 1.5


    OCR Scan     		PDF 2SK874 2SK874 b 772 p rjh ah TC-6301