IRFR6215
Abstract: IRFU6215
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRFR6215
IRFU6215
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IRFR6215PBF
Abstract: IRFR6215 IRFU6215
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
surfa16
EIA-481
EIA-541.
EIA-481.
IRFR6215PBF
IRFR6215
IRFU6215
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Untitled
Abstract: No abstract text available
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
EIA-481
EIA-541.
EIA-481.
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MOSFET IRF 570
Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
Text: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits
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4081A
IRFP31N50L
170ns
O-247AC
O-247AC
MOSFET IRF 570
marking 31A
035H
IRFP31N50L
IRFPE30
PE30
irf 2030
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irf 940
Abstract: 600-RG IRF 860
Text: PD - 95080 IRFR/U6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215PbF
IRFR6215)
IRFU6215)
-150V
O-252AA)
EIA-481
EIA-541.
EIA-481.
irf 940
600-RG
IRF 860
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IRF6215 dpak
Abstract: IRF6215 diode 6.6A rectifier marking 66a
Text: IRFR/U6215PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRFR/U6215PbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF6215 dpak
IRF6215
diode 6.6A rectifier
marking 66a
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AN1001
Abstract: IRF 860
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
O-220AB
-520A/
AN1001
IRF 860
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035H
Abstract: IRFPE30 IRF 860 MOSFET IRF 570
Text: PD-94842 IRFP460PPbF Dynamic dv/dt Rating Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder Plated for Reflowing l Lead-Free Description HEXFET® Power MOSFET l l D VDSS = 500V
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PD-94842
IRFP460PPbF
O-247
O-220
O-218
IRFPE30
035H
IRFPE30
IRF 860
MOSFET IRF 570
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Untitled
Abstract: No abstract text available
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/Â
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/
IRF 860
AN1001
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/
IRF 860
AN1001
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
12-Mar-07
IRF 860
AN1001
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Untitled
Abstract: No abstract text available
Text: PD - 95493A IRF2805PbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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5493A
IRF2805PbF
O-220AB
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AN-1005
Abstract: irf 5110
Text: PD - 95493A IRF2805PbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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5493A
IRF2805PbF
O-220AB
AN-1005
irf 5110
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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T4 DIODE
Abstract: irfag52
Text: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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T-39-13
IRFAG50
O-204AA
G-277
IRFAG50,
IRFAG52
0QCH301
G-278
T4 DIODE
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irf 930
Abstract: AN5510 AN5410 L70C IRF 860
Text: xb tífflIC AN5510 A N 5510 V ertical Deflection Output Circuit I St ^ / D e s c r i p t i o n AN 5510 l±, H iftT 'tc I # AN5410, AN 5411 i ¿0 Unit i mm 4.7 ±0.6 -15.0± 0.3 3.6 + 0.2 Ui 2.7 ±0.4 Fïl I IFÑ I 1.8R IS /F e a tu re s • l& itiM K ft T if H S lB ] n 'i H i i i » m
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AN5510
AN5410,
11-Lead
220pF
022//F
22//F16V
5600pF
irf 930
AN5510
AN5410
L70C
IRF 860
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MARKING CODE D4t
Abstract: IRF 860
Text: V i J& ft z z n o ip s ‘ ON %-n b REV. æ r ñ # DESCRIPTION DON NO. DATE DR. S EH & S APPD. APPD. CHK. Q N IM Vü Q ^ #1LBI ±0.8 TABLE m m P.O.B t 1 . 6 ~ t 2 . 0 Â tR tl. 6 ~ t2 . 0 t O.64 1 P ART No. OF CONTACTS AND DI ME NSI ONS xb-c ^d .e m. A
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KMA88)
MARKING CODE D4t
IRF 860
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72SM
100A101JP50
1N4007
BC337
BD135
TPV5055B
TRIMMER capacitor 160 pF
transistor BC337
TRIMMER capacitor 10-40 pf
22 pf trimmer capacitor
1n4007 mttf
linear amplifier 470-860
Zener diode 9.1
470-860 mhz Power amplifier 5 w
capacitor c3b
TPV5055B
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IRF450R
Abstract: F450 RF-45
Text: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*
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IRF450,
IRF451,
IRF452,
IRF453
IRF450R,
IRF451R,
IRF452R
IRF453R
RE14b.
IRF450R
F450
RF-45
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IRF 860
Abstract: 5056B IRF 150a
Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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150TS6
IRF 860
5056B
IRF 150a
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Untitled
Abstract: No abstract text available
Text: • 4302271 00S3T73 T31 2 H A R R IS ■ HAS IR F 450/451/452/453 IRF450R /451R /452R /4S 3R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package T O -2 0 4 A A 11A and 13A, 4SOV - 5 0 0V • r o s ( o i = 0 .4 ÎÎ an d 0 .5 f i
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00S3T73
IRF450R
/451R
/452R
IRF450,
IRF451,
IRF452,
IRF453
IRF450R,
IRF451R,
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