TSL2771
Abstract: sensor LDR curve ldr sensor FOR LIGHT SENSING TSL27711FN TSL27711 TSL27713 TSL27713FN ldr 1000 nm LDR sensor circuit and implementation TAOS100A
Text: TSL2771 LIGHT-TO-DIGITAL CONVERTER with PROXIMITY SENSING r r TAOS100A − FEBRUARY 2010 Features PACKAGE FN DUAL FLAT NO-LEAD TOP VIEW D Ambient Light Sensing and Proximity Detection in Single Device D Ambient Light Sensing (ALS) − − − − Approximates Human Eye Response
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TSL2771
TAOS100A
TSL2771
sensor LDR curve
ldr sensor FOR LIGHT SENSING
TSL27711FN
TSL27711
TSL27713
TSL27713FN
ldr 1000 nm
LDR sensor circuit and implementation
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MOSFET IRF 1018 Datasheet
Abstract: IRLR024Z IRLU024Z
Text: PD - 95825 IRLR024Z IRLU024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 58mΩ
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IRLR024Z
IRLU024Z
AN-994.
MOSFET IRF 1018 Datasheet
IRLR024Z
IRLU024Z
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irf 5205
Abstract: MBC237 uma1005t IRF 708 3296 Variable Resistor SSOP20 application notes frd 3 pin 3296 Variable Resistor
Text: INTEGRATED CIRCUITS DATA SHEET UMA1005T Dual low-power frequency synthesizer Preliminary specification Supersedes data of September 1992 File under Integrated Circuits, IC03 Philips Semiconductors November 1994 Philips Semiconductors Preliminary specification
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UMA1005T
UMA1005T
SCD35
413061/1500/02/pp24
irf 5205
MBC237
IRF 708
3296 Variable Resistor
SSOP20
application notes frd
3 pin 3296 Variable Resistor
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MOSFET IRF 630
Abstract: No abstract text available
Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l
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EIA-541
Abstract: IRF7601 d2s diode
Text: PD - 9.1261D IRF7601 HEXFET Power MOSFET l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V RDS on = 0.035Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
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1261D
IRF7601
EIA-541.
EIA-541
IRF7601
d2s diode
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EIA-541
Abstract: IRF7601
Text: PD - 9.1261D IRF7601 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D S 1 8 S 2 7 D S 3 6 D 4 5 D G VDSS = 20V RDS(on) = 0.035Ω
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1261D
IRF7601
EIA-541.
EIA-541
IRF7601
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Untitled
Abstract: No abstract text available
Text: PD - 9.1261D IRF7601 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D S 1 8 S 2 7 D S 3 6 D 4 5 D G VDSS = 20V RDS(on) = 0.035Ω
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1261D
IRF7601
EIA-541.
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
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device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
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Untitled
Abstract: No abstract text available
Text: IRFR15N20D IRFU15N20D I-Pak IRFU15N20D D-Pak IRFR15N20D Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRFR15N20D
IRFU15N20D
AN1001)
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transistor tt 2170
Abstract: hudi HD64F2170 Nippon capacitors
Text: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual
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REJ09B0149-0200Z
H8S/2172Group
16-Bit
Family/H8S/2100
H8S/2170
HD64F2170
D-85622
H8S/2172
transistor tt 2170
hudi
HD64F2170
Nippon capacitors
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HD64F2170
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2172
H8S/2170
HD64F2170
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transistor tt 2170
Abstract: ep3285 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2172
REJ09B0149-0200Z
transistor tt 2170
ep3285
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR15N20D
IRFU15N20D
AN1001)
AN-994.
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IRF MOSFET 100A 200v
Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120
Text: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFR15N20D
IRFU15N20D
AN1001)
AN-994.
IRF MOSFET 100A 200v
AN1001
IRFR120
IRFR15N20D
IRFU120
IRFU15N20D
U120
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TPS2330
Abstract: TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A
Text: TPS2330 48ĆV Telecom Hot Swap Evaluation Module and Interface Card User’s Guide April 2001 PMP PD & PS SLVU048 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TPS2330
SLVU048
SLVP184
SLVP155)
IRF530N
TPS2330
TPS2300
TPS2331
GMK316F475Z
schematic diagram 48V telecom
12061C104KAT2A
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Equivalent IRF 44
Abstract: fifo buffer m 9403 1N3064 9403
Text: Signetics 9403 64-Bit FIFO Buffer Memory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data Rate • Serial or Parallel Input and Output • Expandable Without External Logic • Three-State Outputs • Fully TTL-Compatlble
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64-Bit
10MHz
24-Pin
Equivalent IRF 44
fifo buffer
m 9403
1N3064
9403
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ICL 7108
Abstract: icl 7103 irf 940 for ICL 7106 ICl 7106 N9403N
Text: S ig n eU cs 9403 64-Bit FIFO Buffer M em ory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data Rate As shown in Figure 1, the 9403 consists of three parts which operate asynchro nously and are virtually independent.
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64-Bit
10MHz
24-Pin
14-word
ICL 7108
icl 7103
irf 940
for ICL 7106
ICl 7106
N9403N
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Equivalent IRF 44
Abstract: irf 44 n N9403N irf 44 ns Equivalent IRF 33 9403 1N3064 irf 480 IRF 480 equivalent irf 150 equivalent
Text: S ig n e tic s 9403 64-Bit FIFO Buffer M em ory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data R ate As shown in Figure 1, the 9 4 0 3 consists of three parts which op erate asynchro nously and are virtually independent.
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64-Bit
10MHz
24-Pin
Equivalent IRF 44
irf 44 n
N9403N
irf 44 ns
Equivalent IRF 33
9403
1N3064
irf 480
IRF 480 equivalent
irf 150 equivalent
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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pd7810
Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
Text: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro com puters integrate sophisticated on-chip peripheral
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uPD7810
uPD7811
/PD7810
/PD7811
16-bit
PD7810/11
256-byte
pd7810
PD7811
PD7810G-36
PD7811G-36
PD7811G
7810 NEC
R2M 45
F147
nec uPD7811
irf 480
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d7810
Abstract: PD7811 nec 7810 MPD7811G-36 nec d7810 R2M 45 LA7050 49-000602C nec uPD7811 ML160
Text: NEC ¿ÍPD7810/11 8 -B IT , S IN G L E -C H IP N M O S M IC R O C O M P U T E R S W IT H A / D C O N V ER TER NEC Electronics Inc. D escription The ¿ /P D 7 8 1 0 Pin C onfiguration and ¿ /P D 7 8 1 1 s in g le - c h ip m ic r o PAoC PA.C 2 pa2 c 3 pa3 C 4
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delta dps 298 cp
Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Text: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X
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Corporation/464
962-5011/TWX
Tech-71-038
delta dps 298 cp
delta dps 298 cp-1
IRF 8030
irf 4710
bbc 598 479 DIODE
F4049
sn 94042
Switching power supplies Delta electronics dps
MR 4710
ci 4047B
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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irf p 1806
Abstract: No abstract text available
Text: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA400TD60U
irf p 1806
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