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    IRF 250N Search Results

    IRF 250N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    F2250NLGK Renesas Electronics Corporation Wideband Voltage Variable RF Attenuator Visit Renesas Electronics Corporation
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    F2250NLGK8 Renesas Electronics Corporation Wideband Voltage Variable RF Attenuator Visit Renesas Electronics Corporation
    RBA250N04AHPF-4UA01#GB0 Renesas Electronics Corporation 40V–250A N-channel Power MOS FET Visit Renesas Electronics Corporation
    ADC1453D250NGG-C1 Renesas Electronics Corporation Dual channel 14-bit ADC; 250 Msps; JESD204B serial outputs Visit Renesas Electronics Corporation
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    IRF 250N Price and Stock

    Infineon Technologies AG IRFP250NPBF

    MOSFETs MOSFT 200V 30A 75mOhm 82nCAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRFP250NPBF 453
    • 1 $2.8
    • 10 $2.52
    • 100 $1.6
    • 1000 $1.32
    • 10000 $1.32
    		Buy Now

    IRF 250N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF 501

    Abstract: IRF500N IRF500NC irf 260 IRF 530 125mm2 200NC W103 irf 150 irf free
    Text: POWER 06.2002 PCN RESISTORS MAX. 500W TOL. 0.5% TC. 260ppm/ ЊC IRF FLAT TYPE METAL CLAD WIRE-WOUND RESISTORS Winding Method : Non Inductive Winding Type Wattage Rating Chassis Mounted W Resistance Range (V) IRF 100 NC 100 1ϳ560 Resistance Tolerance (%)


    Original     		PDF 260ppm/ 55C155C IRF100NCIRF250NC 3053053t IRF300NCIRF500NC 4004003t IRF 501 IRF500N IRF500NC irf 260 IRF 530 125mm2 200NC W103 irf 150 irf free

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    irf 249 A

    Abstract: No abstract text available
    Text: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I720A irf 249 A

    IRF 344

    Abstract: IRF n 30v
    Text: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I710A IRF 344 IRF n 30v

    IRF MOSFET 100A 200v

    Abstract: MOSFET 150 N IRF
    Text: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I740A IRF MOSFET 100A 200v MOSFET 150 N IRF

    D78C10

    Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
    Text: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip


    OCR Scan     		PDF 457S2S 0D133 uPD78C10 uPD78C11 uPD78C14 16-bit 256-byte D78C10 PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36

    pd7810

    Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
    Text: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro ­ com puters integrate sophisticated on-chip peripheral


    OCR Scan     		PDF uPD7810 uPD7811 /PD7810 /PD7811 16-bit PD7810/11 256-byte pd7810 PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480

    IRF530

    Abstract: IRF532.533
    Text: MICRO ELE CT RONICS-CO RP 1TE » bQTlTôfl QQQ07Ö1 1 »REUMINARY B l° |- ü IRF530 IRF531 IRF532 IRF533 I HIGH POWER MOSFETs PartNunfaw IRFS3Q IRF531 IRF532 IRFS33 APPLICATIONS l AI• .SWITCHING REGULATORS • I I I I • CONVERTERS VDS ^OS on 100V man


    OCR Scan     		PDF QQQ07 IRF530 IRF531 IRF532 IRF533 IRF532.533

    se 140

    Abstract: SE140 F3J48 SF3G48 SF3J48 USF3G48 USF3J48
    Text: TOSHIBA SF3G48,SF3J48,USF3G48,USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48, SF3J48, USF3G48, USF3J48 MEDIUM POWER CONTROL APPLICATIONS. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current


    OCR Scan     		PDF SF3G48 SF3J48 USF3G48 USF3J48 SF3G48, SF3J48, USF3G48, SF3G48-SF3J48 13-10J1B se 140 SE140 F3J48 USF3J48

    1rf830

    Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
    Text: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS


    OCR Scan     		PDF 1RF830 1RF831 IRF832 IRF833 IRFS30 IRF631 IRFS32 IRF833 LG diode 831 IRF830.831

    Untitled

    Abstract: No abstract text available
    Text: SSH17N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		PDF SSH17N60A O-220-F-4L 0G3b333

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    NEC 7808

    Abstract: 7809 A PI 505 7808 A PD7808 7809 pi uPD7809 PD7811 7808 nec
    Text: SEC NEC Electronics Inc. yuP D 7807/08/09 HIGH-END, 8-B IT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH COMPARATOR AND 8K ROM PRELIMINARY INFORMATION D escription Pin Configuration The yuPD7807//uPD7808///PD7809 single chip m icro­ com puter augm ents the high-end NEC fam ily of 8 -b it


    OCR Scan     		PDF uPD7807 uPD7808 uPD7809 the//PD7811, 16-bit //PD7808 NEC 7808 7809 A PI 505 7808 A PD7808 7809 pi PD7811 7808 nec

    MOSFET IRF 713

    Abstract: No abstract text available
    Text: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)


    OCR Scan     		PDF M302271 F710/711/712/713 IRF71 OR/711R/712R/713R IRF710, IRF711, IRF712, IRF713 IRF710R, IRF711R, MOSFET IRF 713

    smd diode sm i7

    Abstract: m33 tf 130 AF1EA
    Text: Ip j .0 p p Q t i o n a l Provisional Data Sheet No. PD-9.1548 IOR Rectifier HEXFET POWER MOSFET IRFN240 N -C H A N N E L 200 Volt, 0.180 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi­


    OCR Scan     		PDF

    irf332

    Abstract: IRF331 IRF3302
    Text: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package


    OCR Scan     		PDF S5M52 T-39-11 IRF330 IRF331 IRF332 IRF333 O-204 G-119 IRF330, IRF331, IRF3302

    IC8048

    Abstract: cwt 235 atx D78C1 78C17 HS1ND JRC 8048B UPD78C17CW 78C18 citi coil UPD7801
    Text: M O S *W 5]S& M O S Integrated Circuit / ¿ P D 7 8 C 1 7 , 7 8 C 18 8 t y h " > > ? \ s ? - 'V 7 ° ' — 9 (A/D n > '< — f i t à ) //PD78C18Ü, 16 h* >y h ALU, ROM, RAM, A / D n > /< - ^ , >f r? /> f -<> h • fj ^ > ÿ , ïüffl U $ & { 3 ^ { z 3 1 K ^ M t ' i t i o / ï ' J (ROM/RAM) £


    OCR Scan     		PDF uPD78C18 //PD78C18fi, //PD78C17 //PD78C18 IEU-738 159ffico^ IC8048 cwt 235 atx D78C1 78C17 HS1ND JRC 8048B UPD78C17CW 78C18 citi coil UPD7801

    RA5E

    Abstract: SRFE 1126 IRF 024 RY 227 Tf 227 10A 016T NEC CPUii k7d7 upd78cp14 ZPD* ITT mkad
    Text: M O S Integrated C irc u it PD78C14A pPD 7 8C 14 A iil6b y h A L U , ROM, RAM, A /D n 's*<—9, 7/u • -i § !> CMOS 8 t' v 1- •-v-f 1“ * ', %M.tt9 4 -v/'f ' O o n > h° ^ X7 f- • t ^ > 9 , tilfflx 'J h &X'<T>9 i ij RO M /R A M ) £t£3ftT" 1 ^ T 't o ^ P D 7 8 C 1 4 A i± C M O S i» j t ^ ^ * f im # 'l*


    OCR Scan     		PDF uPD78C14A 78C18 IEU-738 87AD-> 16384WX 256WX RA5E SRFE 1126 IRF 024 RY 227 Tf 227 10A 016T NEC CPUii k7d7 upd78cp14 ZPD* ITT mkad

    ZTE MF 180 circuit

    Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
    Text: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t


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    Untitled

    Abstract: No abstract text available
    Text: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance


    OCR Scan     		PDF

    IRF 250

    Abstract: MAX365CPE
    Text: 19-0181; Rev 0; 9/93 Precision, Quad, SPST Analog S w itches The MAX364/MAX365 are fabricated with Maxim's new improved 44V silicon-gate process. Design improve­ m ents g u a ra n te e e xtre m e ly low c h a rg e in je c tio n 10pC , low power consumption (35nW), and electro­


    OCR Scan     		PDF MAX364/MAX365 MAX364 MAX365 500pA 250ns 170ns) X364/M IRF 250 MAX365CPE

    irf 4903

    Abstract: irf 250n 114-5042
    Text: A M Application Specification R m m m 114-5042 28 JAN 00 m Rev. E2 Crim ping of “250” Series, Positive Lock Receptacle Contact 25 0 v h X -Jl v f l f ' U y ì - m 0 Contents First 7 pages following this top sheet English version Next 7 pages Japanese version


    OCR Scan     		PDF FJOO-OI59-00 J-002 irf 4903 irf 250n 114-5042

    diode U1J

    Abstract: NE83Q92 NE83Q92A NE83Q92D NE83Q92N NE83Q93
    Text: Philips Semiconductors Data Communications Products " • bbS3=124 o c m b f l l 31fl ■ SIC3 Preliminary specification “ ■— ■■■ m m m m m m w— mmm Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION FEATURES The NE83Q92 is a low power coaxial


    OCR Scan     		PDF bb53T24 NE83Q92 NE83Q92 10base5) 10base2) 100ns diode U1J NE83Q92A NE83Q92D NE83Q92N NE83Q93

    NE83Q93

    Abstract: NE83Q94DK QQR471 QQT4712 ethernet transformer 10base-2 "Ethernet Transceiver"
    Text: • bbsg^M o c m 7 ii iss « s i c s Philips Semiconductors Data Communications Products Preliminary specification Miniature coaxial Ethernet transceiver DESCRIPTION NE83Q94 PIN CONFIGURATION The NE83Q94 is a low power coaxial transceiver interface CTI for


    OCR Scan     		PDF NE83Q94 NE83Q94 10base5) 10base2) 100ns 00T4720 NE83Q93 NE83Q94DK QQR471 QQT4712 ethernet transformer 10base-2 "Ethernet Transceiver"