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    IRF 100V 300A Search Results

    IRF 100V 300A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    DG300A/BCA Rochester Electronics LLC DG300A - SPST, 2 Func, CMOS - Dual marked (M38510/11601BCA) Visit Rochester Electronics LLC Buy
    DG300A/BIA Rochester Electronics LLC DG300A - SPST, 2 Func, CMOS - Dual marked (M38510/11601BIA) Visit Rochester Electronics LLC Buy
    CS4100V-01L Coilcraft Inc Current Sense Transformer, 24A, ROHS COMPLIANT Visit Coilcraft Inc

    IRF 100V 300A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR9120N

    Abstract: IRFU9120N
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V IRFR/U9120NPbF O-252AA) EIA-481 EIA-541. IRFR9120N IRFU9120N

    irf 100v 300A

    Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481.

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF IRFR/U9120NPbF IRFR9120N) IRFU9120N) -100V O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 380

    IRF630B_FP001

    Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630B-FP001 IRF630B IRF630A ASM 630B IRF630 Fairchild
    Text: IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF630B/IRFS630B FP001 O-220 IRF630B IRF630BTSTU FP001 IRF630B_FP001 IRF630 MOTOR CONTROL CIRCUIT IRF630B-FP001 IRF630A ASM 630B IRF630 Fairchild

    IRF*_FP001

    Abstract: No abstract text available
    Text: IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF620B/IRFS620B O-220 IRF620B FP001 IRF*_FP001

    irf 2203

    Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
    Text: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF610B/IRFS610B IRF610B O-220-3 FP001 irf 2203 IRF610B_FP001 IRF*_FP001 IRF 870 irf 146

    Untitled

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF IRF830B/IRFS830B O-220 O-220F 54TYP 00x45Â

    FQP5N20L

    Abstract: No abstract text available
    Text: QFET TM FQP5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N20L FQP5N20L

    IRF630B

    Abstract: No abstract text available
    Text: IRF630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF630B IRF630B

    IRF650B

    Abstract: No abstract text available
    Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF650B IRF650B

    IRF650

    Abstract: No abstract text available
    Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF650B IRF650

    IRF620B

    Abstract: No abstract text available
    Text: IRF620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF620B IRF620B

    irf640b

    Abstract: No abstract text available
    Text: IRF640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF640B irf640b

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF640B/IRFS640B IRF640B irfs640b IRF series

    IRFS820B

    Abstract: IRF820B
    Text: IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF820B/IRFS820B IRFS820B IRF820B

    IRFS830B

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF830B/IRFS830B IRFS830B

    IRFS630B

    Abstract: IRF630B
    Text: IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF630B/IRFS630B 10ner IRFS630B IRF630B

    IRF610B

    Abstract: IRFS610B
    Text: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF610B/IRFS610B IRF610B IRFS610B

    IRF650B

    Abstract: IRFS650B
    Text: IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF650B IRFS650B IRFS650B

    dc motor forward reverse control

    Abstract: 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF
    Text: IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF610B/IRFS610B dc motor forward reverse control 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF

    IRF 470

    Abstract: IRF620B IRFS620B IRF series
    Text: IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF620B/IRFS620B IRF 470 IRF620B IRFS620B IRF series

    IRF650

    Abstract: 125 diode converter circuit dc dc 100V dc motor forward reverse control IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel 40V MOSFET 32a p channel mosfet 100v N-Channel MOSFET 200v
    Text: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF650B IRF650 125 diode converter circuit dc dc 100V dc motor forward reverse control IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel 40V MOSFET 32a p channel mosfet 100v N-Channel MOSFET 200v

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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