irf 100v 200A
Abstract: IRF9530N 64mh
Text: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage
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IRFR/U5410PbF
AN-994
O-251AA)
IRFU120
irf 100v 200A
IRF9530N
64mh
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irf 100v 200A
Abstract: transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT
Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4BC20UDPbF
O-220AB
O-220AB.
irf 100v 200A
transistor IRF 610
IRF 840 equivalent
transistor irf 840
diode Marking code WT
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Untitled
Abstract: No abstract text available
Text: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω
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-95314A
IRFR5410PbF
IRFU5410PbF
IRFR5410)
IRFU5410)
-100V
EIA-481
EIA-541.
EIA-481.
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IRFR5410
Abstract: IRFU5410
Text: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω
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-95314A
IRFR5410PbF
IRFU5410PbF
IRFR5410)
IRFU5410)
-100V
design16
EIA-481
EIA-541.
EIA-481.
IRFR5410
IRFU5410
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IRF 55v 200A
Abstract: IRFR P-Channel MOSFET IRFR5410 IRFU5410 irfr5410pbf irf 100v 200A
Text: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω
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-95314A
IRFR5410PbF
IRFU5410PbF
IRFR5410)
IRFU5410)
-100V
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF 55v 200A
IRFR P-Channel MOSFET
IRFR5410
IRFU5410
irfr5410pbf
irf 100v 200A
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95613
Abstract: diode LE 78A
Text: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
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IRG4BC15UDPbF
from10
O-220AB
95613
diode LE 78A
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transistor irf 647
Abstract: 95613 TD 42 F
Text: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
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IRG4BC15UDPbF
from10
O-220AB
transistor irf 647
95613
TD 42 F
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Untitled
Abstract: No abstract text available
Text: PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V
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IRG4IBC20KDPbF
25kHz
O-220
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Untitled
Abstract: No abstract text available
Text: PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V
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IRG4IBC20KDPbF
25kHz
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
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IRG4BC15UDPbF
from10
O-220AB
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irf 100v 200A
Abstract: transistor irf 840 IRF 840 equivalent
Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4BC20UDPbF
O-220AB
O-220AB.
irf 100v 200A
transistor irf 840
IRF 840 equivalent
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Untitled
Abstract: No abstract text available
Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UD-SPbF
200kHz
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irf 100v 200A
Abstract: No abstract text available
Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4BC20UDPbF
O-220AB
irf 100v 200A
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IRF 504
Abstract: 005 418 irf 144
Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UD-SPbF
200kHz
IRF 504
005 418
irf 144
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Untitled
Abstract: No abstract text available
Text: IRF830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF830B
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IRF820B
Abstract: irf 100v 200A
Text: IRF820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF820B
IRF820B
irf 100v 200A
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IRF840B
Abstract: No abstract text available
Text: IRF840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRF840B
IRF840B
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Untitled
Abstract: No abstract text available
Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF840B/IRFS840B
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IRF840B
Abstract: irf 940 IRFS840B
Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF840B/IRFS840B
IRF840B
irf 940
IRFS840B
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IRF840B
Abstract: 2005Z IRF840B free download irf 44 ns IRFS840B 3232A irf 100v 200A
Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF840B/IRFS840B
IRF840B
2005Z
IRF840B free download
irf 44 ns
IRFS840B
3232A
irf 100v 200A
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2005Z
Abstract: IRF840B IRF series 2005 Z IRFS840B
Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF840B/IRFS840B
2005Z
IRF840B
IRF series
2005 Z
IRFS840B
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Transistor Mosfet N-CH 400V 40A
Abstract: AN-994 IRFR120 R120 Transistor Mosfet N-CH 200V 40A IRF 548
Text: PD - 95192 IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4RC10SDPbF
O-252AA
Transistor Mosfet N-CH 400V 40A
AN-994
IRFR120
R120
Transistor Mosfet N-CH 200V 40A
IRF 548
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Untitled
Abstract: No abstract text available
Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF840B/IRFS840B
IRFS840
IRFS840A
IRFS840BT
IRFS840B
O-220F
O-220F
O-220F-3
AN-4121:
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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