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    IRF (10A) 55V Search Results

    IRF (10A) 55V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    LMD18200T/LF14 Texas Instruments 3A, 55V H-Bridge 11-TO-220 Visit Texas Instruments Buy
    LMD18200T Texas Instruments 3A, 55V H-Bridge 11-TO-220 -40 to 125 Visit Texas Instruments
    LMD18200T/NOPB Texas Instruments 3A, 55V H-Bridge 11-TO-220 -40 to 125 Visit Texas Instruments Buy
    CS60-010S Coilcraft Inc Current Sense Transformer, 10A Visit Coilcraft Inc Buy
    LMD18200-2D/883 Texas Instruments 2.4A, 55V H-Bridge 24-CDIP SB -55 to 125 Visit Texas Instruments Buy
    5962-9232501MXA Texas Instruments 2.4A, 55V H-Bridge 24-CDIP SB -55 to 125 Visit Texas Instruments

    IRF (10A) 55V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF GATE LOGIC

    Abstract: AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a
    Text: PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A


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    PDF 95551B IRLR014NPbF IRLU014NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481. IRF GATE LOGIC AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 55V l RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFIZ24N O-220 insulatin245,

    Untitled

    Abstract: No abstract text available
    Text: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description


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    PDF IRLR/U014NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481.

    diode 9508-1

    Abstract: No abstract text available
    Text: PD- 95081 IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A


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    PDF IRLR024NPbF IRLU024NPbF IRLR024N) IRLU024N) IRLR/U024NPbF O-252AA) EIA-481 EIA-541. EIA-481. diode 9508-1

    IRFR5305

    Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) O-252AA) EIA-481 EIA-541. EIA-481. IRFR5305 IRFR P-Channel MOSFET IRFU5305PbF IRFU5305

    IRFR5305

    Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) moun16 EIA-481 EIA-541. EIA-481. IRFR5305 IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF

    Untitled

    Abstract: No abstract text available
    Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) EIA-481 EIA-541. EIA-481.

    IRF (10A) 55V

    Abstract: AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10
    Text: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V


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    PDF 5062A IRLR2705) IRLU2705) IRLR2705PbF IRLU2705PbF O-252A O-252AA) EIA-481 EIA-541. EIA-481. IRF (10A) 55V AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10

    mosfet IRFZ34N

    Abstract: U120 AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120
    Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF 5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) O-252AA) EIA-481 EIA-541. EIA-481. mosfet IRFZ34N U120 AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120

    Untitled

    Abstract: No abstract text available
    Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF 5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) EIA-481 EIA-541. EIA-481.

    IRF (10A) 55V

    Abstract: IRLR2705 AN-994 IRFU120 IRLU2705 IRLZ34N R120 U120 IRF Power MOSFET code marking
    Text: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V


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    PDF 5062A IRLR2705) IRLU2705) IRLR2705PbF IRLU2705PbF O-252A16 EIA-481 EIA-541. EIA-481. IRF (10A) 55V IRLR2705 AN-994 IRFU120 IRLU2705 IRLZ34N R120 U120 IRF Power MOSFET code marking

    irf power mosfet

    Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
    Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF 5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) EIA-481 EIA-541. EIA-481. irf power mosfet IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    PDF 1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N

    Equivalent IRF 44

    Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    PDF 1329B IRLIZ34N O-220 Equivalent IRF 44 IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34

    Untitled

    Abstract: No abstract text available
    Text: PD- 95084 IRLR/U2905PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.027Ω


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    PDF IRLR/U2905PbF IRLR2905) IRLU2905) O-252AA) EIA-481 EIA-541. EIA-481.

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    PDF 1329B IRLIZ34N O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω


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    PDF 5369A IRFR2405PbF IRFU2405PbF IRFR2405) IRFU2405) EIA-481 EIA-541. EIA-481.

    IRF 260 N

    Abstract: rectifier diode assembly diode 1600 rectifier HEXFET Power MOSFET IRF (10A) 55V IRF (10A) 55V P IRF N-Channel Power MOSFETs AN-994 IRFR2405 IRFU120
    Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω


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    PDF 5369A IRFR2405PbF IRFU2405PbF IRFR2405) IRFU2405) EIA-481 EIA-541. EIA-481. IRF 260 N rectifier diode assembly diode 1600 rectifier HEXFET Power MOSFET IRF (10A) 55V IRF (10A) 55V P IRF N-Channel Power MOSFETs AN-994 IRFR2405 IRFU120

    1530A

    Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


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    PDF IRFI9Z34N O-220 1530A f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44

    1530A

    Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
    Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


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    PDF IRFI9Z34N O-220 1530A IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E

    IRF (10A) 55V

    Abstract: AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF
    Text: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω


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    PDF 5369A IRFR2405PbF IRFU2405PbF IRFR2405) IRFU2405) O-252AA) EIA-481 EIA-541. EIA-481. IRF (10A) 55V AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF

    IRF9Z34N

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.2001 IRF9Z34N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.10Ω


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    PDF IRF9Z34N O-220 IRF9Z34N