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    IRC530 EQUIVALENT Search Results

    IRC530 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    IRC530 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF3205 equivalent

    Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
    Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test


    Original     		PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    Untitled

    Abstract: No abstract text available
    Text: PD-9.454D International Iksr]Rectifier IRC530 HEXFET P ow er M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 100V ^DS on = 0 .1 6 Í2


    OCR Scan     		PDF IRC530 SI33H

    IRCZ34 equivalent

    Abstract: 1RCZ44 IRCZ34 C024
    Text: International IO R Rectifier HEX Part Size Number HEXFET Power MOSFETs Cp>v N fF fN A '- C 'S /- . www.irf.com r S iw H r 'C - Vos Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm Equivalent Device Type IRCZ24 HEXSense® Die N-Channel :


    OCR Scan     		PDF 1RCC330 IRCZ24 IRCZ34 IRC530 1RC630 1RC630 IRCZ34 equivalent 1RCZ44 C024

    IRC540 equivalent

    Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
    Text: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4


    OCR Scan     		PDF IRFC9014 IRFC9110 IRFC9210* IRFC9024 IRFC9120 IRFC9220* IRFC9034 IRFC9130 IRFC9230 IRFC9044 IRC540 equivalent IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent

    IRC540 equivalent

    Abstract: IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRFC9034 irfc9120 IRFC9110 IRLC034
    Text: I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFET Power MOSFETS HEX Sia PartNumber Recommended Source Bonding Win mis mm Vos R0S on M" Die Olitine Rgurt -60 -100 -200 -60 -100 -200 -60 -100 -200 -100 -200 0.500 1.200 3.000 0.280 0.600 1.500 0.140


    OCR Scan     		PDF IRFC9014 IRFC9110 IRFC9210* IRFC9024 IRFC9120 IRFC9220* IRFC9034 IRFC9130 IRFC9230 IRFC9140 IRC540 equivalent IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRLC034

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


    OCR Scan     		PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R