irc tDW resistors
Abstract: No abstract text available
Text: HT62104 Infrared Remote Encoder Feature General Description • Operating voltage: 2.0V ~ 5.0V The HT62104 devices are high performance infrared remote control encoders which are manufactured in silicon gate CMOS technology. The HT62104 devices support eight data key inputs and an LED output to
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HT62104
HT62104
38kHz
irc tDW resistors
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Untitled
Abstract: No abstract text available
Text: HT62104 Infrared Remote Encoder Feature General Description • Operating voltage: 2.0V ~ 5.0V The HT62104 devices are high performance infrared remote control encoders which are manufactured in silicon gate CMOS technology. The HT62104 devices support eight data key inputs and an LED output to
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HT62104
HT62104
38kHz
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Untitled
Abstract: No abstract text available
Text: FUpSU January 1994 Edition 1.0 DATA SHEET MB82008-17 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82008 is 131,072-word x 8-bit high speed static random access memory fabricated with CMOS technology.
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MB82008-17
072-WORD
MB82008
400mil
500mV
32-LEAD
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Untitled
Abstract: No abstract text available
Text: November 1993 Edition 2.0 FUJITSU DATA SHEET : MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD X 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access m em ory fabricated w ith CMOS technology.
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MB82009-20/-25
072-WORD
MB82009
36-LEAD
LCC-36P-M01)
36051S-2C
374T75b
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Untitled
Abstract: No abstract text available
Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MBQ299-25/-35 CMOS 288K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 9 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB8299 is a high-speed static random access memory organized as 32,768 words x 9 bits and fabricated with CMOS technology. To obtain a smaller chip
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MBQ299-25/-35
288K-BIT
MB8299
F32DD4S-2C
MB8299-25
MB8299-35
32-LEAD
LCC-32P-M04)
C32024S1C
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM62256CL/CL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time : 55, 70, 8 5 , 100ns Max. • Low P o w e r Dissipation S tandby (CMOS) : 10yuW(Typ.) L-Version 5/iW(Typ.) LL-Version The K M 62 256C L /C L-L is a 2 6 2 ,1 4 4 -b it high-speed
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KM62256CL/CL-L
100ns
10yuW
KM62256CL/CL-L
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28-TSOP1
Abstract: No abstract text available
Text: KM62256CL/CL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55,70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 10pW(Typ.) L-Version 5/jW(Typ.) LL-Version Operating : 35mW/1 MHz(Max.) • Single 5 V ± 10% power supply
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KM62256CL/CL-L
100ns
35mW/1
KM62256CLP/CLP-L
28-DIP-600B
KM62256CLG/CLG-L
28-SOP-450
KM62256CLS/CLS-L
28-DIP-300
KM62256CLTG/CLTG-L
28-TSOP1
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IDT7M135
Abstract: IDT7M134S IDT7M145
Text: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • • • • • • • • ■ • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) or 8K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port
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IDT7M134S
IDT7M135S
64K/128K
IDT7M135)
IDT7M134
134/ID
RL10L
LW10R
IDT7M135
IDT7M145
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PD431000
Abstract: uPD431000
Text: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE pPD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.
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uPD431000
PD431Q00
072-word
PD431000
pPD43l000
32-pln
32-Pin
L42752S
DG32147
iPD431000
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Untitled
Abstract: No abstract text available
Text: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static
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65536-BIT
MB82B75-1B
MB82B75-20
TS270-A893
MB82B75
384-words
30Qmil
C24G62S-1C
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Untitled
Abstract: No abstract text available
Text: HI GH S P E E D 1K X 8 D U A L - P O R T STATI C S R AM IDT7130SA/L A IDT7140SA/L A FEATURES 16-or-more-bits using SLAVE IDT7140 On-chip port arbitration logic IDT7130 Only BUSY output flag on IDT7130; BUSY input on IDT7140 ÏN T tlag tor port-to-port communication
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IDT7130SA/L
IDT7140SA/L
25/35/55/100ns
55/100ns
IDT7130/IDT7140SA
550mW
IDT7130/IDT7140LA
IDT7130
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Untitled
Abstract: No abstract text available
Text: H A R HS-3282 F R IS REFERENCE AN400 CMOS ARINC Bus Interface Circuit J an u a ry 1 9 9 2 F ea tures P in o u ts 40 L E A D D IP • A R IN C S p e c ific a tio n 4 2 9 C o m p a tib le T O P V IE W • D a ta R a te s o f 1 0 0 K ilo b its o r 1 2 . 5 K ilo b its
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HS-3282
X5700
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stereophonic
Abstract: m9841 resistor m9841 MSM9841 MSM9841GS-2K
Text: E2D1029-18-31 O K I Semiconductor MSM9841_ Recording and Playback LSI with Built-in FIFO GENERAL DESCRIPTION The MSM9841 is a m o n o /ste reo record and playback LSI w ith a built-in IK bit FIFO for easy interface w ith external system s or non-sem iconductor m em ory. It utilizes m ultiple record and
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E2D1029-18-31
MSM9841
MSM9841
8/16-bit
16-bit
stereophonic
m9841
resistor m9841
MSM9841GS-2K
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Untitled
Abstract: No abstract text available
Text: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use
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B8421/22-90
MB8421/22-90L
MB8421/22-12
MB8421/22-12L
MB8421/MB8422
MB8421
MB8422
FPT-64P-M
F64005S
MB8421/22-90
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DHC8-P85
Abstract: C82C55A I82C55A M82C55A
Text: ;•. > 1 ÏS S ÏÎS ! UAL A DUAL PARALLEL PORT INTERFACE MODULE WWhite DHC8-DPDS SERIES Technology, Inc. Advance Information 001609 FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply
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DHC8-P85
C82C55A
I82C55A
M82C55A
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C2939
Abstract: CHN 617
Text: HIGH-SPEED IDT7026S/L 1 6 K x 16 D U A L - P O R T STATIC R A M FEATURES: • • • • True D ual-Ported m em ory cells which allow sim ulta neous access ot the sam e m em ory location High-speed access — M ilitary: 20/25/35/55ns max. — Industrial: 55ns (max.)
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IDT7026S/L
20/25/35/55ns
15/20/25/35/55ns
IDT7026S
IDT7026L
IDT7026
MIL-STD-883,
84-pin
G84-3)
C2939
CHN 617
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT F eatures * INT flag for port-to-port com m unication * Battery backup operation— 2V data retention * TTL-com patible, sign al 5V ±10% power supply * Available in 52-pin P L C C * Industrial temperature range (-4 0 °C to +85°C) is available for
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52-pin
25135145155ns
IDT70121/70125S
IDT70121S/L
IDT70125S/L
IDT70121/70125L
IDT70121/1DT70125
IDT70121
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 8K x 9 DUAL-PORT £ V ¡ y IDT7015S/L STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • True Dual-Ported memory cells which allow simulta neous reads of the same memory location High-speed access — Military: 25/35ns max.
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IDT7015S/L
68-pin
80-pin
25/35ns
15/17/20/25/35T
IDT7015/7016
IDT701
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: ffl h a r r is H M - 6 5 5 1 / 8 8 3 256 x 4 CMOS RAM June 1989 P in o u t F eatures • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully C onform ant U nder the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .SOfiWMax.
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220ns
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MAX134 Multimeter
Abstract: MAX133CQH J368 LCD-IV MAX133 MAX133EPL MAX133EQH MAX134 MAX134CPL MAX134CQH
Text: J V \J Y X \J V \ 3 3A D ig it D M M C irc u it _F e a tu re s The M AX133 and M AX134 are in te g ra tin g A /D c o n verters fo r 3% d ig it m u ltim e te rs and data a c q u is itio n system s such as data lo g g e rs and w eigh scales. The
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AX133
AX134
MAX134 Multimeter
MAX133CQH
J368
LCD-IV
MAX133
MAX133EPL
MAX133EQH
MAX134
MAX134CPL
MAX134CQH
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PDF
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2740 D
Abstract: C4645
Text: gjjirN HIGH-SPEED 4Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, inc. FEATURES: IDT7024S/L • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta n e o u s re a d s o f th e s a m e m e m o ry lo c a tio n • m o re th a n o n e d e v ice
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IDT7024S/L
IDT7024
IDT7024S/L
100-pin
84-pin
G84-3)
F84-2)
2740 D
C4645
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PDF
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KM62256C
Abstract: KM62256CL km62256cls KM62256CL-7
Text: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n
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KM62256CL
32Kx8
385mW
KM62256CLP/CLP-L
28-pin
KM62256CLG/CLG-L
KM62256CLTG/CLTG-L
KM62256CLRG/CLRG-L
KM62256C
km62256cls
KM62256CL-7
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70261S/L Integrated Device Technology, Inc FEATURES: • • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta n e o u s re a d s o f th e s a m e m e m o ry lo c a tio n H ig h -s p e e d a cc e s s
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IDT70261S/L
T702611A
100-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7027S/L HIGH-SPEED 32Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • T ru e D u a l-P o rte d m e m o ry cells w h ic h a llo w s im u lta neous a cce ss of th e s a m e m e m o ry lo cation H ig h -sp e e d access
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IDT7027S/L
100-pin
108-pin
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