Untitled
Abstract: No abstract text available
Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRFB8407
AUIRFS8407
AUIRFSL8407
AUIRFB/S/SL8407
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Untitled
Abstract: No abstract text available
Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRFB8407
AUIRFS8407
AUIRFSL8407
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IRFBE30L
Abstract: IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
12-Mar-07
IRFBE30L
IRFBE30S
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P-Channel MOSFET 800v
Abstract: IRFBE30L IRFBE30S IRL3103L
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
12-Mar-07
P-Channel MOSFET 800v
IRFBE30L
IRFBE30S
IRL3103L
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25A, 50V BRIDGE-RECTIFIER
Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
rectifier diode piv
26A RECTIFIER BRIDGE
600 watt amps schematic
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500 watt half bridge schematic
Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
500 watt half bridge schematic
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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500 watt half bridge schematic
Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
500 watt half bridge schematic
26A RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
IR rectifier diode 100A 800V
power diode with piv of 30v
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rectifier diode with piv of 30v
Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
rectifier diode with piv of 30v
power diode with piv of 30v
500 watt half bridge schematic
DIODE RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27309
GB50RF60K
12-Mar-07
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300a 1000v thyristor
Abstract: 100a 1000v thyristor thyristor 10A NTE308 53 diode
Text: NTE308 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
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NTE308
16kHz)
300a 1000v thyristor
100a 1000v thyristor
thyristor 10A
NTE308
53 diode
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NTE310
Abstract: No abstract text available
Text: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
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NTE310
16kHz)
NTE310
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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P-Channel MOSFET 800v
Abstract: No abstract text available
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
08-Mar-07
P-Channel MOSFET 800v
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Untitled
Abstract: No abstract text available
Text: SDR55U080CT thru SDR55U120CT Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP ULTRA FAST CENTERTAP RECTIFIER DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SDR55U080CT
SDR55U120CT
SDR55U
O-254
O-258
O-259
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27309
GB50RF60K
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SDR55U080
Abstract: No abstract text available
Text: SDR55U080CT thru SDR55U120CT Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP ULTRA FAST COMMON CATHODE RECTIFIER DESIGNER’S DATA SHEET
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SDR55U080CT
SDR55U120CT
SDR55U
O-254
O-258
O-259
R55U080CT
SDR55U080
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AUIRLI2505
Abstract: No abstract text available
Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to
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AUIRLI2505
AUIRLI2505
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Untitled
Abstract: No abstract text available
Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to
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AUIRLI2505
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Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X101D100J
APT2X101D90J
APT2X101D80J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 12155 05 /98 International l R Rectifier q u ie t IR Series 70EPR. FAST SOFT RECOVERY RECTIFIER DIODE 'f ir m s = 135A VF < 1.4V@ 85A trr = 95ns VRRM 800 to 1200V Description/Features The 70EPF. fast soft recovery Q U IE T lR rectifier series
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70EPR.
70EPF.
-40to150
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D125U4
Abstract: D125U10 D125U6 D125U8 IR rectifier diode 100A 800V
Text: b3E ^514054 D □□□□45b IVMI 444 RECTIFIER CHIPS 70nS RECOVERY V RWM = T rr = D125U4 D125U8 D125U6 D125U10 Ni - Gold Top and Bottom 4 0 0 -1000V 70nS Glass Passivation Hermetically Sealed .x .030 VOLTAGE MULTIPLIERS X I NC .125 .125 Peak Inverse Voltage
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D125U4
D125U8
D125U6
D125U10
00-1000V
D125U10
IR rectifier diode 100A 800V
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wd800
Abstract: B36-A
Text: PD - 9.543C International I«R Rectifier IRFPG50 HEXFET Power MOSFET • D y n a m ic d v /d t R a tin g • Repetitive Avalanche Rated • V DSS = Is o la te d C e n tra l M o u n tin g H o le • Fast Switching • Ease of Paralleling • Simple Drive Requirements
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IRFPG50
10-02Tan
wd800
B36-A
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diode BYY 62
Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r
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IRFBE20
O-220
diode BYY 62
MOSFET 800V 10A to 220 3l
IRFBE20
BYY diode
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APT15D80K
Abstract: No abstract text available
Text: AD VANCED PO W ER T e ím n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K APT15D90K APT15D80K 1000V 900V 800V 15A 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S P R O D U C T F E A TU R E S PR O D U C T B E N E F IT S
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APT15D100K
APT15D90K
APT15D80K
T0-220
TQ-220AC
APT15D80K
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