ir led PHOTODIODE
Abstract: ir sensor for object detection using led IR object DETECTOR IR Sensor transmitter and receiver diode ir sensor simple circuit ir photodiode amplifier ir proximity sensor IR photodiode sensor ir transmitter receiver sensors abstract of Touch screen sensor
Text: Maxim > App Notes > Amplifier and Comparator Circuits Keywords: high-speed op amps, IR proximity sensing, bandpass filters, IR LEDs, IR photodetectors Oct 15, 2009 APPLICATION NOTE 4622 High-Speed Op Amp Enables Infrared IR Proximity Sensing By: Arpit Mehta
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10kHz,
MAX4230)
10kHz
MAX4230:
com/an4622
AN4622,
APP4622,
Appnote4622,
ir led PHOTODIODE
ir sensor for object detection using led
IR object DETECTOR
IR Sensor transmitter and receiver diode
ir sensor simple circuit
ir photodiode amplifier
ir proximity sensor
IR photodiode sensor
ir transmitter receiver sensors
abstract of Touch screen sensor
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IR Emitters
Abstract: No abstract text available
Text: SIEMENS Si-Foto-Detektoren, IR-Lumineszenzdioden, Lichtschranken Si-Photodetectors, IR Emitters, Light Barriers Data Book 03.96
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TRANSISTOR SMD MARKING CODE 3401
Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111
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GEMY6050
TRANSISTOR SMD MARKING CODE 3401
Q65110A6342
TRANSISTOR SMD MARKING CODE 702
fototransistor BPW 39
SFH415U
sidelooker smd DIODE
transistor smd 3401
SFH 4740
LPT80
BPY62
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phototransistor ultraviolet
Abstract: foto sensor
Text: SI-FOTODETEKTOREN, OPTISCHE UND IR-LUMINESZENZDIODEN SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SI-FOTODETEKTOREN, OPTISCHE UND IR-LUMINESZENZDIODEN SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS 1. Foto IC für Fernsteuerung
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sfh 309 fr
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P • GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren • Hohe Zuverlässigkeit • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • Hohe Impulsbelastbarkeit
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SFH487P
switc53SbG5
950nm
fl235b05
sfh 309 fr
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cdte
Abstract: Photoconductor 86X10
Text: PCI-M Series IR Photoconductors FAST 2-6 µm IR PHOTOCONDUCTORS ROOM TEMPERATURE, OPTICALLY IMMERSED FEATURES ambient temperature operation ∗spectral range of 2-6 µm ∗D*=108-1011 cmHz11/W fast response time low bias power requirements wide dynamic range
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cmHz11/W
cdte
Photoconductor
86X10
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Q62703-Q516
Abstract: diode SR 315
Text: SFH 485 P SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren
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fex06306
Q62703-Q516
diode SR 315
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PC-L-2TE
Abstract: photoconductor ir photodetector
Text: PC-L-2TE Series CO2 Laser Detector IR Photoconductor 2-12 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED FEATURES • • • • • • D* 10.6 µm >1x108cmHz1/2/W <10 nanosecond time constant high output signal wide dynamic range compact, rugged and reliable
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1x108cmHz1/2/W
3x108
1x108
PC-L-2TE
photoconductor
ir photodetector
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UM 7108 F
Abstract: photoconductor cdznte 2TE12 IR photodetectors AN 7108
Text: PCI-2TE Series IR Photoconductor 2-12µm Spectrally Tailored IR Photoconductors Themoelectrically Cooled, Optically Immersed FEATURES • • • • • • high performance in the 2-12µm range without LN2-cooling! fast response convenient to use wide dynamic range
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Abstract: No abstract text available
Text: SIEM ENS GaAIAs-IR-Lummeszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale Features • G aA IA s-IR -Lum ineszenzdiode, hergestellt im Schm elzepitaxieverfahren • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • G ute spektrale A npassung an
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SFH485P
fi53StjQS
0057fl33
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Q62703-Q517
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Cathode SFH 487 P GEX06308 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt
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GEX06308
Q62703-Q517
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P 4.0 " l 3.6 p -& Ï0.4 Cathode G EX06308 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt
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EX06308
OHR01894
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkm ale Features • • • • • • GaAIAs-IR-Lum ineszenzdiode, hergestellt
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PHOTODIODE PD 20
Abstract: photodiode responsivity 1550nm 2 photodetector 1300nm photodetector PIN 1300nm PD-1375-ir Photodetector 1550nm pin photodetector 1300nm sm 1040 InGaAs Photodiode 1550nm photodiode responsivity 1550nm with FC connector
Text: 1300 / 1550 nm PD-1375-ir Description: PD-1375-ir – is a series of photodetector modules for spectral range of 1300/1550nm based on InGaAs PIN photodiode. Hermetically sealed modules are performed in standard receptacle package with built-in collimating ball lens and are used for coupling with «FC/PC» connectorized
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PD-1375-ir
1300/1550nm
622Mb/s)
PHOTODIODE PD 20
photodiode responsivity 1550nm 2
photodetector 1300nm
photodetector PIN 1300nm
PD-1375-ir
Photodetector 1550nm
pin photodetector 1300nm
sm 1040
InGaAs Photodiode 1550nm
photodiode responsivity 1550nm with FC connector
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tic 41
Abstract: No abstract text available
Text: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Inhaltsverzeichnis Fotodetektoren Table of Contents for Photodetectors Seite Page 1. Integrierter Empfänger für Fernbedienungen 1. Integrated Remote Control Receiver
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4 Pin SMD Hall sensors
Abstract: optokoppler Cross Reference vergleichsliste magnetoresistor "vergleichsliste" hall sensor 4-pin dIP MRS DIP Silizium-Drucksensoren ir laserdioden hall sensor 4-pin
Text: Inhaltsverzeichnis Contents Symbole und Begriffe Symbols and Terms Seite Page 6 Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Typenübersicht; Abbildungen Si-Fotodetektoren Inhaltsverzeichnis Summary of Types; photos (Silicon photodetectors)
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tc 4516
Abstract: 4516-U sfh4516
Text: 2011-03-14 GaAs Infrared Emitters GaAs-IR-Lumineszenzdioden Version 1.0 SFH 4516 Features: • • • • Besondere Merkmale: Good spectral match with silicon photodetectors UL version available High reliability Very highly efficient GaAs-LED • • •
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D-93055
tc 4516
4516-U
sfh4516
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diode 9306
Abstract: FA 4301 SFH 9500 SFH 5110 bpx 48 BP104 SFH 4552 SFH9240 GEOY6972 GPXY6992
Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Maßbilder in mm inch Outline Drawings dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) SFH 5110, SFH 5111 Figure 2 6.1 (0.240) 5.9 (0.232)
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GETY6091
GPLY6899
GPLY6880
diode 9306
FA 4301
SFH 9500
SFH 5110
bpx 48
BP104
SFH 4552
SFH9240
GEOY6972
GPXY6992
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IF20
Abstract: 71N2 SLD-70BG2 planar photodiodes Silonex SLD-67HF2A
Text: Silonex Planar Photodiodes, IREDs and Arrays Visit SilonexÕs Website at www.silonex.com Planar Photodiodes Planar, passivated silicon photodetectors designed to operate either in photovoltaic mode or in a reverse-bias mode. Available with IR and BG filters for spectral
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SLD-68E1A
SLD-68EBG1A
100sizes.
SLSD-71N1
SLSD-71N2
SLSD-71N3
SLSD-71N4
SLSD-71N5
SLSD-71N6
SLSD-71N7
IF20
71N2
SLD-70BG2
planar photodiodes Silonex
SLD-67HF2A
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Untitled
Abstract: No abstract text available
Text: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available
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D-93055
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Untitled
Abstract: No abstract text available
Text: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available
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SFH4512
Abstract: 4512
Text: 2011-03-14 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 4512 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAs-LED 5mm plastic package Peak Wavelength 950nm Spectral match with silicon photodetectors High radiant intensity
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950nm
D-93055
SFH4512
4512
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fototransistor BPW 39
Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode
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Q62702-P945
Q62702-P1601
Q62702-P270
Q62702-P17-S1
Q62702-P305
fototransistor BPW 39
BPW21
photodetectors
Q62702P945
SFH 3410
BPX 48
fototransistor
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IEC 62471 osram
Abstract: No abstract text available
Text: 2007-04-02 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 487 P Features: • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors
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D-93055
IEC 62471 osram
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