Untitled
Abstract: No abstract text available
Text: OHM’S LAW VARIATIONS OF OHM’S LAW S TT VOLTS AM P ES ER WA E E W 2 R R IR E EI W I W/R WR E R E I W W E2 W T S I IR I2 OH 2 110 115 120 208 220 230 240 277 380 415 440 460 480 550 Rated Voltage 110 115 100% 109% 119% 91% 100% 109% OHMS = VOLTS AMPERES
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Untitled
Abstract: No abstract text available
Text: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)
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MA111
MA176WK
AMA2S111
MA177/A
MA112Ã
MA180
MA113
pins0/178
DO-35/34
D31/27
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Untitled
Abstract: No abstract text available
Text: C IR C U IT N U M B E R S 12 P L . (9.5) III III III III . . 145 (3.6 8) TYP. • i— i J- o o © L ©00© n ©00© r . 145 (3.6 8) TYP. RECEPTACLE HOUSING I 1625 I C IR C U IT C IR C U IT I . D . (3 P L . ) N U M BE R S (12 P L . ) A MOUNTING E A R
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UCR2002-0270
U7077G
NYL0N66
I625-I2RI
I625-I2R
S6/87/83
SD-I625-I2R*
81SBttujj
mBf655iiiÂ
MXJ-32
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Untitled
Abstract: No abstract text available
Text: P H Y S IC A L 2 SH IELDED P A R A L L E L P A IR S SH IELD ED PAIR 2 4 AWG SO LID SILVER PLATED C O P PER BINDER .0 5 6 NOM DIAM ETER FOAM POLYOLEFIN, ONE N ATURAL, OTHER RED TINT P A R A L L E L P A IR WITH DRAIN: 2 6 AWG SOLID TINNED C O P PE R A L U M - P O L Y SHIELD
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Untitled
Abstract: No abstract text available
Text: SIEM ENS GaAIAs-IR-Lummeszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale Features • G aA IA s-IR -Lum ineszenzdiode, hergestellt im Schm elzepitaxieverfahren • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • G ute spektrale A npassung an
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SFH485P
fi53StjQS
0057fl33
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uniwatt
Abstract: No abstract text available
Text: ORDERING INFORMATION Device MC1398P Temperature Range Package -20°C to +75°C Plastic DIP T V C O L O R P R O C ES SIN G C IR C U IT T V C O L O R P R O C ES SIN G C IR C U IT SILIC O N M O N O LITHIC IN T E G R A T E D C IR C U IT . . . a chroma IF am plifier w ith autom atic chroma control, color kille r,
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MC1398P
C1398P
uniwatt
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MPSU10
Abstract: MC1398 MC1398P MPS-U10
Text: ORDERING INFORMATION Device MC1398P Temperature Range — 20°C to+75°C Package Plastic DIP MC1398 T V CO LO R P R O C E SSIN G C IR C U IT T V C O LO R P R O C E SSIN G C IR C U IT S IL IC O N M O N O L IT H IC IN T E G R A T E D C IR C U IT . . . a c h ro m a IF a m p lifie r w ith a u to m a tic c h ro m a c o n tr o l, c o lo r k ille r,
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MC1398P
MC1398P
MPSU10
MC1398
MPS-U10
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HO 050
Abstract: ir21 IR21084 IR2108 IR21084S IR2108S MS-012AB
Text: | p j"0 f n Q t Ì O n Q I Preliminary Data Sheet No. PD60161J IR 2108 /IR 21084 X Q R R e c tifie r HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
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PD60161J
IR2108/IR21084
500ns
IR21084)
IR2108/IR21084
HO 050
ir21
IR21084
IR2108
IR21084S
IR2108S
MS-012AB
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Untitled
Abstract: No abstract text available
Text: |p j"0f n Q t ÌO n Q I Preliminary Data Sheet No. PD601631 X Q R R e c tifie r IR 2 1 0 9 /IR 2 1 0 9 4 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage
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PD601631
500ns
IR21094)
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B34 transistor
Abstract: transistor p2a marking code B34 PMST3906
Text: • P h ilin ^Sem m ir niconductors n r in r t n r « P hilips ^53^31 □□ 2ST37 7 Tfl « A P X N AMER PHILIPS/DISCRETE P roduct specification b?E D PNP switching transistor FEATURES PMST3906 PIN CONFIGURATION • S-mini package • Short switching time.
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tbS3T31
PMST3906
OT323
MAM096
bbS3T31
DQEST41
B34 transistor
transistor p2a
marking code B34
PMST3906
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 £ BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC L D IM D y OPTIONAL CENTER "AMP", PART P A R T S UNDER MATERIAL: j P in w j P in w j P in w j P in ir > P in w j P in w j
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UN2007
26AUG2008
3IMAR2000
27JUN2001
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MC1351
Abstract: No abstract text available
Text: O RDERING INFORMATION Device M C 135 1 P Temperature Range Package 0°C to +75°C Plastic D IP W ID E B A N D F M - A M P L IF IE R ; L IM IT E R , D E T E C T O R , A N D A U D IO A M P L IF IE R T V S O U N D C IR C U IT M O N O L IT H IC S IL IC O N IN T E G R A T E D C IR C U IT
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MC1351
MC1351
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MC1399P
Abstract: PEC 648 MC1399 PJ+1399+diode
Text: MC1399 Advance Information T V COLOR PROCESSING C IR C U IT S IL IC O N M O N O L IT H IC I N T E G R A T E D C IR C U IT T V COLOR PROCESSING C IR C U IT T h e M C 1 3 9 9 contains a chrom a IF am p lifie r w ith autom atic chrom a con trol, color killer, linear dc chrom a co n tro l, and a phase
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MC1399
MC1399
MC1399P
PEC 648
PJ+1399+diode
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SN76110N
Abstract: MC1307P SN76110 MC-1307-P SN76110N-07 7522-A 19KHz top octave generator SN7611
Text: CONSUM ER C IR C U IT S C IR C U IT T Y P E SN76110 S T E R EO D E M O D U L A T O R FOR USE IN FM MULTIPLEX SYSTEMS • Designed to be Interchangeable with Motorola MC1307P • Power Supply Range . . . 8 to 14 V • Low Harmonic Distortion • Stereo-Indicator Lamp Driver
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SN76110
MC1307P
19-kHz
SN76110N,
SN76110N-07.
SN76110N
MC-1307-P
SN76110N-07
7522-A
19KHz
top octave generator
SN7611
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mc1351
Abstract: MC1351P audio preamplifier circuit diagram 30 mHz BW preamplifier transistor audio preamplifier circuit diagram rms audio amplifier circuit diagram
Text: ORDERING INFORMATION Device MC1351P Temperature Range Package 0°C to +75°C Plastic DIP W ID E -B A N D F M -A M P L IF IE R ; L IM IT E R , D E T E C T O R , A N D A U D IO A M P L IF IE R T V S O U N D C IR C U IT M O N O L IT H IC S ILIC O N IN T E G R A T E D C IR C U IT
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MC1351P
MC1351
mc1351
audio preamplifier circuit diagram
30 mHz BW preamplifier
transistor audio preamplifier circuit diagram
rms audio amplifier circuit diagram
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y736
Abstract: SCL SDA VSYNC HSYNC PXCK image SY 180/4 170M CCIR656 TMC2490 TMC2490A TMC2491A marking lt 1173 MUX ADR 622
Text: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm TMC2490A/TMC2491 A M u ltis ta n d a r d Digital Video E n c o d e r Features Applications • A ll-digital video encoding • Internal digital subcarrier synthesizer • 8-bit parallel C C IR -601/C C IR -656/A N S I/S M P T E
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TMC2490A/TMC2491
CCIR-601/CCIR-656/ANSI/SMPTE
CCIR-624/SMPTE-
CCIR656)
10-bit
DS7002490A
y736
SCL SDA VSYNC HSYNC PXCK image
SY 180/4
170M
CCIR656
TMC2490
TMC2490A
TMC2491A
marking lt 1173
MUX ADR 622
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bcd alu
Abstract: Shift register designed by Max Plus bit slice processors MC10179 MC10902 AL49
Text: g M O TO R O LA A d v a n c e In form ation MECL-LSI 8-BIT BINARY/BCD ALU SLICE 8-BIT BINARY/BCD ALU SLICE T h e M C 10 9 0 2 is a h ig h s p e e d A L U b u ild in g b lo c k fo r d ig ita l p ro c e s s o rs . T h e c ir c u it o p e ra te s d ir e c tly on BCD d a ta in a d d itio n
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MC10902
M10900
2284C
bcd alu
Shift register designed by Max Plus
bit slice processors
MC10179
AL49
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U22 2.5A 250V
Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
U22 2.5A 250V
P1028
K1502
FSP400
BFX82
2N3379
C621
MT101B
TIX882
c644
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Q720
Abstract: Q710 10125 ecl to ttl TTL 1980 ecl10k Q700 amcc q710
Text: O s v ^ C f 004958 DEVICE SPECIFICATION A P P L IE D M IC R O C IR C U IT S C O R P O R A T IO N Q700 SERIES ECL/TTL LOGIC ARRAYS FEATURES VARIOUS ARRAY SIZES 250, 500, 1000 e q u iva le n t gate version s to su p p o rt various c irc u it re q u ire m e n ts.
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1N916
1N3064.
Q720
Q710
10125 ecl to ttl
TTL 1980
ecl10k
Q700
amcc q710
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Q710
Abstract: AMCC Q700 Logic TTL military summary Q720 ECL10K Q700 68-LCC VCC-650 ECL IC NOR
Text: O s v ^ C f 004958 DEVICE SPECIFICATION A P P L IE D M IC R O C IR C U IT S C O R P O R A T IO N Q700 SERIES ECL/TTL LOGIC ARRAYS FEATURES VARIOUS ARRAY SIZES 250, 500, 1000 e q u iva le n t gate version s to su p p o rt various c irc u it re q u ire m e n ts.
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1N916
1N3064.
Q710
AMCC Q700
Logic TTL military summary
Q720
ECL10K
Q700
68-LCC
VCC-650
ECL IC NOR
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10d71
Abstract: MC1741CP1 MC1741C MCC1741C
Text: LINEAR INTEGRATED CIRCUIT CHIPS G E N E R A L D E S C R IP T IO N M o to r o la n o w o ffe rs a ve ry b ro a d se le c tio n o f lin e a r integ rated c ir c u it c h ip s . A m o n g th e ty p e s o f c ir c u its w h ic h c o m p o se th e lin e a r f a m ily th e re are:
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MC1741CP1
MC1741C)
MC1741C
MCC1741C)
MCW1741C)
MCC1741C-1)
MCC10170/MCC10570
MCC10171/MCC10571
58x59
10d71
MCC1741C
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Untitled
Abstract: No abstract text available
Text: npEx HIGH VOLTAG E POW ER O P E R A TIO N A L A M P LIFIE R S ir A iA ü S & lte ïi APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-A PEX FEATURES • • • • • P E X " PA87 HIGH VOLTAGE — 450V +225V LOW COST LOW QUIESCENT CURRENT — 3.8m A MAX
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546-APEX
200mA
1N4148
1N914
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d1708g
Abstract: nec d1708g UPD1708G NEC k 2134 transistor MPD1708G d1708 107986 KSS 213 nec 1708g ij9b
Text: P R ELIM IN A R Y S P E C IFIC A T IO N SEC / ELECTRON DEVICE MOS D IG ITA L IN TEGRATED C IR C U IT / / ^ ¿ ¿ p d i7 0 8 G Ä ^ - q i 3 , / ; P Ä ^ ^ A ^ d i 7 0 8 G - 2 1 3 P L L F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R p f Q p y
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uPD1708G-013
uPD1708G-213
52pin
1SS53x6
d1708g
nec d1708g
UPD1708G
NEC k 2134 transistor
MPD1708G
d1708
107986
KSS 213
nec 1708g
ij9b
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