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    IR HEXFET PROBE SPECIFICATIONS Search Results

    IR HEXFET PROBE SPECIFICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D82C284-8 Rochester Electronics LLC Processor Specific Clock Generator, 16MHz, CMOS, CDIP18, CERDIP-18 Visit Rochester Electronics LLC Buy
    D82C284-12 Rochester Electronics LLC Processor Specific Clock Generator, 25MHz, CMOS, CDIP18, CERDIP-18 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    IR HEXFET PROBE SPECIFICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFC11N50

    Abstract: IRFB11N50A equivalent
    Text: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω


    Original     		PDF IRFC11N50AB 12-Mar-07 IRFC11N50 IRFB11N50A equivalent

    IRFP264n equivalent

    Abstract: IRFC264
    Text: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)


    Original     		PDF IRFC264NB 100nA 12-Mar-07 IRFP264n equivalent IRFC264

    Untitled

    Abstract: No abstract text available
    Text: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description


    Original     		PDF IRFCG20B O-220 12-Mar-07

    IRFB18N50K equivalent

    Abstract: No abstract text available
    Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original     		PDF IRFC18N50KB O-220 100nA 12-Mar-07 IRFB18N50K equivalent

    20ETS

    Abstract: IR180DM16CCB
    Text: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters


    Original     		PDF I0116J IR180DM16CCB 20ETS 12-Mar-07

    40EPS

    Abstract: IR230DM16CCB
    Text: Bulletin I0117J rev. A 08/01 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters


    Original     		PDF I0117J IR230DM16CCB 40EPS 12-Mar-07 IR230DM16CCB

    WAFER International Rectifier

    Abstract: IR hexfet probe specifications 93825
    Text: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics


    Original     		PDF I0146J IR155DM16CCB 15ETS 12-Mar-07 WAFER International Rectifier IR hexfet probe specifications 93825

    IR135DM16CCB

    Abstract: No abstract text available
    Text: Bulletin I0115J 09/00 IR135DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWS.S Series Major Ratings and Characteristics Parameters


    Original     		PDF I0115J IR135DM16CCB 12-Mar-07 IR135DM16CCB

    how to test POWER MOSFET with digital multimeter

    Abstract: isl6236 sd1009 AN1272 irf7832 08053D105KAT2A 6TPD330M ISL6236EVAL2 HEXFEt Power MOSFET Design Guide H1046-00104-50V10
    Text: ISL6236 Evaluation Kit – Chipset Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment


    Original     		PDF ISL6236 ISL6236. AN1272 how to test POWER MOSFET with digital multimeter sd1009 irf7832 08053D105KAT2A 6TPD330M ISL6236EVAL2 HEXFEt Power MOSFET Design Guide H1046-00104-50V10

    isl6236 schematic

    Abstract: how to test POWER MOSFET with digital multimeter AN1271 ISL6236 10w r33 irf7821 irf7832 ldo 5 pinout LDO Positive 08053D105KAT2A
    Text: ISL6236 Evaluation Kit – System Regulation Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment


    Original     		PDF ISL6236 ISL6236. AN1271 isl6236 schematic how to test POWER MOSFET with digital multimeter 10w r33 irf7821 irf7832 ldo 5 pinout LDO Positive 08053D105KAT2A

    ultrasonic pulse generator kit

    Abstract: Ultrasonic power generator schematic ultrasonic generator 20khz ISL6236IRZ onsemi marking smps 10w 5V ac power adapter for notebook schematic onsemi marking R12 marking P12 smps 5v 0.3A
    Text: ISL6236 Evaluation Kit – System Regulation Application Application Note November 29, 2006 General Description Features The ISL6236 dual step-down, switch-mode power-supply SMPS controller generates logic-supply voltages in battery-powered systems. The ISL6236 include two


    Original     		PDF ISL6236 100mA AN1271 ultrasonic pulse generator kit Ultrasonic power generator schematic ultrasonic generator 20khz ISL6236IRZ onsemi marking smps 10w 5V ac power adapter for notebook schematic onsemi marking R12 marking P12 smps 5v 0.3A

    6TPF330M9L

    Abstract: AN1456 40 TQFN 5x5 CAP7343 ISL62386 ISL62386HIEVAL1Z ISL62386LOEVAL1Z TP20 resistor 10k 10w
    Text: ISL62386LOEVAL1Z and ISL62386HIEVAL1Z Quad-Output Evaluation Board User Guide Application Note August 25, 2009 Introduction TABLE 2. ENABLE TRUTH TABLE Continued The ISL62386 evaluation boards demonstrates the performance of the ISL62386 quad-output voltage controller.


    Original     		PDF ISL62386LOEVAL1Z ISL62386HIEVAL1Z ISL62386 ISL62386xxEVAL1Z AN1456 6TPF330M9L 40 TQFN 5x5 CAP7343 ISL62386HIEVAL1Z TP20 resistor 10k 10w

    CAP7343

    Abstract: 6TPF330M9L 2N7002-SOT23 d 1398 ISL62383 ISL62383HIEVAL1Z 78B03S SMCAP C5C27 SUD50N03-07
    Text: ISL62383 Triple-Output Evaluation Board User Guide Application Note July 31, 2008 Introduction TABLE 2. ENABLE TRUTH TABLE The ISL62383 evaluation board demonstrates the performance of ISL62383 triple-output controller. The ISL62383 controller includes two pulse-width modulation


    Original     		PDF ISL62383 100mA. ISL62383xxEVAL1Z AN1398 CAP7343 6TPF330M9L 2N7002-SOT23 d 1398 ISL62383HIEVAL1Z 78B03S SMCAP C5C27 SUD50N03-07

    CAP7343

    Abstract: 6TPF330M9L SUD50N03-07 irf7832 how to test POWER MOSFET with digital multimeter ISL62391 ISL62391HIEVAL1Z ISL62391LOEVAL1Z ISL62392 ISL62392HIEVAL1Z
    Text: ISL62391, ISL62392 Triple-Output Evaluation Board User Guide Application Note Introduction . The ISL62391 and ISL62392 evaluation boards demonstrate the performance of ISL62391 and ISL62392 triple-output controllers. The ISL62391 and ISL62392 controllers include


    Original     		PDF ISL62391, ISL62392 ISL62391 100mA. ISL6239xxxEVAL1Z CAP7343 6TPF330M9L SUD50N03-07 irf7832 how to test POWER MOSFET with digital multimeter ISL62391HIEVAL1Z ISL62391LOEVAL1Z ISL62392HIEVAL1Z

    ultrasonic generator 20khz

    Abstract: Ultrasonic generator schematic circuit AN1539 131-4353-00 Ultrasonic power generator schematic IR R8 MOSFET IRF7811AV irf7832 01UF 10UF
    Text: Application Note 1539 ISL8112EVAL1Z Evaluation Board Setup Procedure The ISL8112 is a dual-output Synchronous Buck controller with 2A integrated driver. It features high light load efficiency which is especially preferred in systems concerned with high efficiency in wide load


    Original     		PDF ISL8112EVAL1Z ISL8112 ISL8112 ISL8112IRZ AN1539 ultrasonic generator 20khz Ultrasonic generator schematic circuit 131-4353-00 Ultrasonic power generator schematic IR R8 MOSFET IRF7811AV irf7832 01UF 10UF

    6TPF330M9L

    Abstract: 2N7002-SOT23 MTP500X CAP7343 2N7002 SOT23 2N7002_SOT23 40 TQFN 5x5 BAT54S application note irf7832 sanyo c35
    Text: ISL62381, ISL62382 Quad-Output Evaluation Board User Guide Application Note Introduction . The ISL62381 and ISL62382 evaluation boards demonstrate the performance of ISL62381 and ISL62382 Quad-output controllers. The ISL62381 and ISL62382 controller include


    Original     		PDF ISL62381, ISL62382 ISL62381 ISL6238xxxEVAL1Z AN1396 6TPF330M9L 2N7002-SOT23 MTP500X CAP7343 2N7002 SOT23 2N7002_SOT23 40 TQFN 5x5 BAT54S application note irf7832 sanyo c35

    DNP013

    Abstract: isl62371 ISL6237IRZA isl6237 6TPD330M mosfet p28 how to test POWER MOSFET with digital multimeter p28 smd smd transistor P23 h2512
    Text: ISL6237EVAL1 Evaluation Kit Application Note This application note describes the ISL6237 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment complexity increases, higher levels of power management


    Original     		PDF ISL6237EVAL1 ISL6237 ISL6237. AN1302 DNP013 isl62371 ISL6237IRZA 6TPD330M mosfet p28 how to test POWER MOSFET with digital multimeter p28 smd smd transistor P23 h2512

    10BQ040

    Abstract: EIA-541 IRF7811AV C1402
    Text: PD - 96079A IRF7811AVUPbF IRF7811AVUPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free


    Original     		PDF 6079A IRF7811AVUPbF IRF7811AV EIA-481 EIA-541. 10BQ040 EIA-541 C1402

    irfp4332

    Abstract: irfp4332 mosfet IRFB4332
    Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter


    Original     		PDF IRFC4332B O-220 irfp4332 irfp4332 mosfet IRFB4332

    FD059H06A5B

    Abstract: 31-2 MIL-HDBK-263 S1025
    Text: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		PDF 0512J FD059H06A5B 12-Mar-07 FD059H06A5B 31-2 MIL-HDBK-263 S1025

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    Untitled

    Abstract: No abstract text available
    Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION


    OCR Scan     		PDF