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    IR DIODE 100A 800V Search Results

    IR DIODE 100A 800V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IR DIODE 100A 800V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAE30 O-204AA/AE)

    mosfet 10a 800v

    Abstract: IRFAE30
    Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAE30 O-204AA/AE) parame252-7105 mosfet 10a 800v IRFAE30

    R2480G2

    Abstract: TA49392
    Text: ISL9R2480G2 TM Data Sheet P RE L I M I NA R Y November 2000 File Number 5005 24A, 800V Stealth Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and


    Original     		PDF ISL9R2480G2 ISL9R2480G2 TA49392. R2480G2 TA49392

    TA49392

    Abstract: ISL9R2480G2 R2480G2 R2480G
    Text: ISL9R2480G2 Data Sheet P RE LIMINARY November 2000 File Number 5005 24A, 800V Stealth Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and


    Original     		PDF ISL9R2480G2 ISL9R2480G2 TA49392 R2480G2 R2480G

    IRFBE30L

    Abstract: IRFBE30S
    Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30S IRFBE30L O-262 12-Mar-07 IRFBE30L IRFBE30S

    Untitled

    Abstract: No abstract text available
    Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant


    Original     		PDF AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUIRFB/S/SL8407

    Untitled

    Abstract: No abstract text available
    Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant


    Original     		PDF AUIRFB8407 AUIRFS8407 AUIRFSL8407

    P-Channel MOSFET 800v

    Abstract: IRFBE30L IRFBE30S IRL3103L
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L

    silicon carbide

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 C1 J G1 E1 C2E1 H Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		PDF QJD1210007 Amperes/1200 silicon carbide

    QJD1210011

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		PDF QJD1210011 Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)


    Original     		PDF QJD1210007 Amperes/1200

    schottky diode 100A

    Abstract: MOSFET 20V 100A QJD1210007 "MOSFET Module" silicon diode 1200V capacitance mosfet transistor 800 volts.300 amperes silicon carbide IR diode 100A 800V "silicon carbide" device transistor silicon carbide
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		PDF QJD1210007 Amperes/1200 schottky diode 100A MOSFET 20V 100A "MOSFET Module" silicon diode 1200V capacitance mosfet transistor 800 volts.300 amperes silicon carbide IR diode 100A 800V "silicon carbide" device transistor silicon carbide

    welder mosfet

    Abstract: mosfet base induction heat circuit QJD1210010 MOSFET 1000 VOLTS high frequency welder circuit diagram sic mosfet
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		PDF QJD1210010 Amperes/1200 welder mosfet mosfet base induction heat circuit MOSFET 1000 VOLTS high frequency welder circuit diagram sic mosfet

    QJD1210006

    Abstract: DIAGRAM OF 5000 volts power inverter
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 H C1 J G1 E1 C2E1 Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		PDF QJD1210006 Amperes/1200 simplif25 DIAGRAM OF 5000 volts power inverter

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode

    Untitled

    Abstract: No abstract text available
    Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAE40 O-204AA/AE)

    100A inverter mosfet

    Abstract: QJD1210006 MOSFET 1000 VOLTS 1200v mosfet "MOSFET Module" MOSFET 20V 100A mosfet transistor 800 volts.300 amperes silicon carbide
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		PDF QJD1210006 Amperes/1200 100A inverter mosfet MOSFET 1000 VOLTS 1200v mosfet "MOSFET Module" MOSFET 20V 100A mosfet transistor 800 volts.300 amperes silicon carbide

    mosfet 10a 800v

    Abstract: IRFAE40
    Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAE40 O-204AA/AE) mosfet 10a 800v IRFAE40

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode


    OCR Scan     		PDF APT2X101D100J APT2X101D90J APT2X101D80J OT-227 OT-227

    SOT-227 Package

    Abstract: No abstract text available
    Text: APT8015JVFR A dvanced P o w er Te c h n o lo g y 800V 44A 0.150^ POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8015JVFR OT-227 APT8015JVFR MIL-STD-750 00A/HS, SOT-227 Package

    Untitled

    Abstract: No abstract text available
    Text: A dvanced POWER Te c h n o l o g y ' APT8018JNFR 800V 40A 0.180 ISOTOP* J Ü I "UL Recognized" File No. E145592 S POWER MOS IVe A V A L A N C H E R A TED F R E D F E T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol Parameter


    OCR Scan     		PDF APT8018JNFR E145592 00A/HS, OT-227

    Untitled

    Abstract: No abstract text available
    Text: SSP3N80A FEATURES - 800 V ^DS on = 4.8 Q. • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V B Low Rds(0n) ■ 3.800 £1 (Typ.) CO Avalanche Rugged Technology


    OCR Scan     		PDF SSP3N80A

    Untitled

    Abstract: No abstract text available
    Text: SSS3N80A A d v a n c e d Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA M ax.’ @ V DS = 800V ^ D S (o n =


    OCR Scan     		PDF SSS3N80A

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    OCR Scan     		PDF APT8075SN